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Detail
Registered METHOD OF FABRICATING AVALANCHE PHOTODIODE
- Inventors
- Jae-Sik Sim, Kisoo Kim, Bongki Mheen, Oh Myoungsook, Kwon Yong-Hwan, Eun Soo Nam
- Application No.
- 13273257 (2011.10.14)
- Publication No.
- 20120156826 (2012.06.21)
- Registration No.
- 8592247 (2013.11.26)
- Country
- UNITED STATES
- Project Code
- 10ZB1100, Development support for customer-based convergence components, Eun Soo Nam
- Abstract
- A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate.
- KSP Keywords
- Absorbing layer, Avalanche photo diode(APD), Buffer layer, Control layer, Protective layer, diffusion control, electric field, front surface, rear surface