상세정보
등록 아발란치 포토 다이오드의 제조방법
- 출원번호
- 13273257 (2011.10.14)
- 공개번호
- 20120156826 (2012.06.21)
- 등록번호
- 8592247 (2013.11.26)
- 출원국
- 미국
- 협약과제
- 10ZB1100, 융.복합부품 핵심기술 연구, 남은수
- 초록
- A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate.