상세정보
등록 멀티플 필드 플레이트를 포함하는 전계효과 트랜지스터
- 출원번호
- 13307069 (2011.11.30)
- 공개번호
- 20120153361 (2012.06.21)
- 등록번호
- 8586462 (2013.11.19)
- 출원국
- 미국
- 협약과제
- 10ZB1100, 융.복합부품 핵심기술 연구, 남은수
- 초록
- Disclosed are a method of manufacturing a field-effect transistor. The disclosed method includes: providing a semiconductor substrate; forming a source ohmic metal layer on one side of the semiconductor substrate; forming a drain ohmic metal layer on another side of the semiconductor substrate; forming a gate electrode between the source ohmic metal layer and the drain ohmic metal layer, on an upper portion of the semiconductor substrate; forming an insulating film on the semiconductor substrate's upper portion including the source ohmic metal layer, the drain ohmic metal layer and the gate electrode; and forming a plurality of field electrodes on an upper portion of the insulating film, wherein the insulating film below the respective field electrodes has different thicknesses.
- KSP 제안 키워드
- Different thicknesses, Field-effect transistors(FETs), Insulating film, Manufacturing method, Ohmic metal, field effect, gate electrode, metal layer, semiconductor substrate
- 패밀리
| 구분 | 특허 | 출원국 | KIPRIS |
|---|---|---|---|
| 등록 | 전계효과 트랜지스터 및 그 제조 방법 | 대한민국 | KIPRIS |