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Detail
Registered FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Inventors
- Hokyun Ahn, Hyung Sup Yoon, Eun Soo Nam, Lee Sang-Heung, Min Byoung-Gue, Hae Cheon Kim, Jong-Won Lim
- Application No.
- 13307069 (2011.11.30)
- Publication No.
- 20120153361 (2012.06.21)
- Registration No.
- 8586462 (2013.11.19)
- Country
- UNITED STATES
- Project Code
- 10ZB1100, Development support for customer-based convergence components, Eun Soo Nam
- Abstract
- Disclosed are a method of manufacturing a field-effect transistor. The disclosed method includes: providing a semiconductor substrate; forming a source ohmic metal layer on one side of the semiconductor substrate; forming a drain ohmic metal layer on another side of the semiconductor substrate; forming a gate electrode between the source ohmic metal layer and the drain ohmic metal layer, on an upper portion of the semiconductor substrate; forming an insulating film on the semiconductor substrate's upper portion including the source ohmic metal layer, the drain ohmic metal layer and the gate electrode; and forming a plurality of field electrodes on an upper portion of the insulating film, wherein the insulating film below the respective field electrodes has different thicknesses.
- KSP Keywords
- Different thicknesses, Field Effect Transistor(FET), Insulating films, Manufacturing method, Ohmic metal, field effect, gate electrode, metal layer, semiconductor substrate