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Registered SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Inventors
- Jong-Won Lim, Hokyun Ahn, Eun Soo Nam, Woojin Chang, Dong Min Kang, Hae Cheon Kim
- Application No.
- 13274367 (2011.10.17)
- Publication No.
- 20120146107 (2012.06.14)
- Registration No.
- 8609474 (2013.12.17)
- Country
- UNITED STATES
- Project Code
- 10ZB1100, Development support for customer-based convergence components, Eun Soo Nam
- Abstract
- Disclosed are a semiconductor device and a method of manufacturing the same. In the semiconductor device according to an exemplary embodiment of the present disclosure, at the time of forming a source electrode, a drain electrode, a field plate electrode, and a gate electrode on a substrate having a heterojunction structure such as AlGaN/GaN, the field plate electrode made of the same metal as the gate electrode is formed on the side surface of a second support part positioned below a head part of the gate electrode so as to prevent the gate electrode from collapsing and improve high-frequency and high-voltage characteristic of the semiconductor device.
- KSP Keywords
- Drain electrode, Field plate, High Voltage, High frequency(HF), Second support, Support part, gate electrode, heterojunction structure, semiconductor device
- Family
| Status | Patent | Country | KIPRIS |
|---|---|---|---|
| Registered | 반도체 소자 및 이의 제조방법 | KOREA | KIPRIS |