상세정보
등록 반도체 소자 및 이의 제조방법
- 출원번호
- 13274367 (2011.10.17)
- 공개번호
- 20120146107 (2012.06.14)
- 등록번호
- 8609474 (2013.12.17)
- 출원국
- 미국
- 협약과제
- 10ZB1100, 융.복합부품 핵심기술 연구, 남은수
- 초록
- Disclosed are a semiconductor device and a method of manufacturing the same. In the semiconductor device according to an exemplary embodiment of the present disclosure, at the time of forming a source electrode, a drain electrode, a field plate electrode, and a gate electrode on a substrate having a heterojunction structure such as AlGaN/GaN, the field plate electrode made of the same metal as the gate electrode is formed on the side surface of a second support part positioned below a head part of the gate electrode so as to prevent the gate electrode from collapsing and improve high-frequency and high-voltage characteristic of the semiconductor device.
- KSP 제안 키워드
- Drain electrode, Field Plate, High Frequency(HF), High Voltage, Second support, Support part, gate electrode, heterojunction structure, semiconductor device
- 패밀리
| 구분 | 특허 | 출원국 | KIPRIS |
|---|---|---|---|
| 등록 | 반도체 소자 및 이의 제조방법 | 대한민국 | KIPRIS |