Registered
Variable gate field-effect transistor(FET) and, electrical and electronic apparatus comprising the same FET
- Inventors
-
Hyun-Tak Kim, Kim Bongjun
- Application No.
- 102011007271.3 (2011.04.13)
- Registration No.
- 102011007271 (2022.08.11)
- Country
- GERMANY
- Project Code
-
10MB2700, New electronic device using electric current jump,
Hyun-Tak Kim
- KSP Keywords
- Field Effect Transistor(FET), field effect, gate field