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Registered Variable gate field-effect transistor(FET) and, electrical and electronic apparatus comprising the same FET

Inventors
Hyun-Tak Kim, Kim Bongjun
Application No.
102011007271.3 (2011.04.13)
Registration No.
102011007271 (2022.08.11)
Country
GERMANY
Project Code
10MB2700, New electronic device using electric current jump, Hyun-Tak Kim
KSP Keywords
Field Effect Transistor(FET), field effect, gate field
Family
 
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Status Patent Country KIPRIS
Registered Variable gate field-effect transistor(FET) and, electrical and electronic apparatus comprising the same FET UNITED STATES
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