상세정보
등록 가변게이트 전계효과트랜지스터(FET) 및 그 FET를 구비한 전기전자장치
- 출원번호
- 13929831 (2013.06.28)
- 등록번호
- 8587224 (2013.11.19)
- 출원국
- 미국
- 협약과제
- 10MB2700, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
- 초록
- Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an electrical and electronic apparatus including the variable gate FET. The variable gate FET includes a FET and a gate control device that is attached to a surface or a heat-generating portion of the FET and is connected to a gate terminal of the FET so as to vary a voltage of the gate terminal. A channel current between the source and drain is controlled by the gate control device that varies the voltage of the gate terminal when the temperature of the FET increases above a predetermined temperature.
- KSP 제안 키워드
- Channel current, Control device, Field-effect transistors(FETs), Gate control, Source and drain, field effect, gate field, variable field
- 패밀리
| 구분 | 특허 | 출원국 | KIPRIS |
|---|---|---|---|
| 등록 | 가변게이트 전계효과트랜지스터(FET) 및 그 FET를 구비한 전기전자장치 | 독일 |