BROWSE
Detail
Registered GALIUM-NITRIDE LIGHT EMITTING DEVICE OF MICROARRAY TYPE STRUCTURE AND MANUFACTURING THEREOF
- Inventors
- Bae Sung-Bum, Ju Jung Jin, Lee Jong-Moo, Eun Soo Nam
- Application No.
- 13473561 (2012.05.16)
- Publication No.
- 20120292634 (2012.11.22)
- Registration No.
- 9041012 (2015.05.26)
- Country
- UNITED STATES
- Abstract
- Disclosed are a microarray type nitride light emitting device and a method of manufacturing the same. More particularly, a uniform current distribution property is ensured by dividing a fine light emitting region by using a first transparent contact layer according to a resistance change property in heat treatment of a material of a transparent conducting oxide used as a transparent contact layer, and connecting the divided light emitting regions by using a second transparent contact layer.
- KSP Keywords
- Conducting oxide, Contact layer, Distribution property, Resistance change, Transparent conducting, Transparent conducting oxide(TCO), Transparent contact, Uniform Current Distribution, current distribution, galium-nitride, heat treatment, light emitting devices, light-emitting, transparent contact layer