상세정보
등록 GaN 전자소자의 집적화 및 제조방법
- 출원번호
- 13548522 (2012.07.13)
- 공개번호
- 20130020649 (2013.01.24)
- 등록번호
- 8723222 (2014.05.13)
- 출원국
- 미국
- 협약과제
- 11VB1200, 차세대 데이터센터용 에너지절감 반도체 기술, 남은수
- 초록
- The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.
- KSP 제안 키워드
- Gallium Nitride(GaN), Gallium nitride (gan), Group III elements, III-Nitrides, Integrated structures, Over-growth, Semi-Insulating, electronic devices, nitride semiconductor