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Detail
Registered NITRIDE ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Inventors
- Bae Sung-Bum, Mun Jae Kyoung, Eun Soo Nam, Hokyun Ahn, Woojin Chang, Kim Sung Bock, Park Young Rak, Sang Choon Ko, Hae Cheon Kim, Ju Chull Won, Jong-Won Lim
- Application No.
- 13548522 (2012.07.13)
- Publication No.
- 20130020649 (2013.01.24)
- Registration No.
- 8723222 (2014.05.13)
- Country
- UNITED STATES
- Project Code
- 11VB1200, Energy Efficient Power Semiconductor Technology for Next Generation Data Center, Eun Soo Nam
- Abstract
- The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.
- KSP Keywords
- Gallium Nitride, Gallium nitride (gan), Group III elements, III-nitride, Nitride semiconductor, Over-growth, Semi-Insulating, electronic devices, integrated structure