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Registered NITRIDE ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

GaN 전자소자의 집적화 및 제조방법
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Inventors
Bae Sung-Bum, Mun Jae Kyoung, Eun Soo Nam, Hokyun Ahn, Woojin Chang, Kim Sung Bock, Park Young Rak, Sang Choon Ko, Hae Cheon Kim, Ju Chull Won, Jong-Won Lim
Application No.
13548522 (2012.07.13)
Publication No.
20130020649 (2013.01.24)
Registration No.
8723222 (2014.05.13)
Country
UNITED STATES
Project Code
11VB1200, Energy Efficient Power Semiconductor Technology for Next Generation Data Center, Eun Soo Nam
Abstract
The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.
KSP Keywords
Gallium Nitride, Gallium nitride (gan), Group III elements, III-nitride, Nitride semiconductor, Over-growth, Semi-Insulating, electronic devices, integrated structure