상세정보
등록 저전압 고이득 고속 광 검출기 및 그의 제조방법
- 출원번호
- 13949081 (2013.07.23)
- 공개번호
- 20140048772 (2014.02.20)
- 등록번호
- 9171996 (2015.10.27)
- 출원국
- 미국
- 협약과제
- 12VB1600, 실리콘 나노포토닉스 기반 차세대 컴퓨터 칩기술, 김경옥
- 초록
- Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.