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Detail
Registered LOW-VOLTAGE HIGH-GAIN HIGH-SPEED GERMANIUM PHOTO DETECTOR AND METHOD OF FABRICATING THE SAME
- Inventors
- Kim Gyungock, Kim Sang Hoon, Jang Ki Seok, In Gyoo Kim, Kim Sun Ae, Oh Jin Hyuk
- Application No.
- 13949081 (2013.07.23)
- Publication No.
- 20140048772 (2014.02.20)
- Registration No.
- 9171996 (2015.10.27)
- Country
- UNITED STATES
- Project Code
- 12VB1600, Silicon Nanophotonics-based next-generation computer chip, Kim Gyungock
- Abstract
- Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.
- KSP Keywords
- Absorption layer, Contact layer, Germanium photodetector, Germanium quantum dots, High Sensitivity, High Speed, Quantum Dot(QD), Silicon wafer, carrier multiplication, high gain, low voltage, photo detector