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Detail
Registered METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
- Inventors
- Bae Sung-Bum, Kim Sung Bock, Mun Jae Kyoung, Eun Soo Nam
- Application No.
- 13897706 (2013.05.20)
- Registration No.
- 8759204 (2014.06.24)
- Country
- UNITED STATES
- Project Code
- 12VB1500, Energy Efficient Power Semiconductor Technology for Next Generation Data Center, Eun Soo Nam
- Abstract
- The inventive concept provides methods for manufacturing a semiconductor substrate. The method may include forming a stop pattern surrounding an edge of a substrate, forming a transition layer an entire top surface of the substrate except the stop pattern, and forming an epitaxial semiconductor layer on the transition layer and the stop pattern. The epitaxial semiconductor layer may not be grown from the stop pattern. That is, the epitaxial semiconductor layer may be isotropically grown from a top surface and a sidewall of the transition layer by a selective isotropic growth method, so that the epitaxial semiconductor layer may gradually cover the stop pattern.
- KSP Keywords
- Growth method, Transition layers, inventive concept, isotropic growth, semiconductor substrate
- Family
| Status | Patent | Country | KIPRIS |
|---|---|---|---|
| Registered | method for manufacturing semiconductor substrate | KOREA | KIPRIS |