상세정보
등록 반도체 기판의 제조방법
- 출원번호
- 13897706 (2013.05.20)
- 등록번호
- 8759204 (2014.06.24)
- 출원국
- 미국
- 협약과제
- 12VB1500, 차세대 데이터센터용 에너지절감 반도체 기술, 남은수
- 초록
- The inventive concept provides methods for manufacturing a semiconductor substrate. The method may include forming a stop pattern surrounding an edge of a substrate, forming a transition layer an entire top surface of the substrate except the stop pattern, and forming an epitaxial semiconductor layer on the transition layer and the stop pattern. The epitaxial semiconductor layer may not be grown from the stop pattern. That is, the epitaxial semiconductor layer may be isotropically grown from a top surface and a sidewall of the transition layer by a selective isotropic growth method, so that the epitaxial semiconductor layer may gradually cover the stop pattern.
- 패밀리
| 구분 | 특허 | 출원국 | KIPRIS |
|---|---|---|---|
| 등록 | 반도체 기판의 제조방법 | 대한민국 | KIPRIS |