상세정보
등록 트랜지스터 및 그 제조 방법
- 출원번호
- 13912350 (2013.06.07)
- 공개번호
- 20140167111 (2014.06.19)
- 등록번호
- 8952422 (2015.02.10)
- 출원국
- 미국
- 협약과제
- 12VB1500, 차세대 데이터센터용 에너지절감 반도체 기술, 남은수
- 초록
- A field effect transistor includes an active layer and a capping layer sequentially stacked on a substrate, and a gate electrode penetrating the capping layer and being adjacent to the active layer. The gate electrode includes a foot portion adjacent to the active layer and a head portion having a width greater than a width of the foot portion. The foot portion of an end part of the gate electrode has a width less than a width of the head portion of another part of the gate electrode and greater than a width of the foot portion of the another part of the gate electrode. The foot portion of the end part of the gate electrode further penetrates the active layer so as to be adjacent to the substrate.
- 패밀리
| 구분 | 특허 | 출원국 | KIPRIS |
|---|---|---|---|
| 등록 | 트랜지스터 및 그 제조 방법 | 대한민국 | KIPRIS |