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Registered TRANSISTOR AND METHOD OF FABRICATING THE SAME

구리 배선 라인의 탑게이트 자기 정렬 산화물 트랜지스터
이미지 확대
Inventors
Cho Sung Haeng, Park Sang-Hee, Hwang Chi-Sun
Application No.
14800251 (2015.07.15)
Publication No.
20150318363 (2015.11.05)
Registration No.
9252222 (2016.02.02)
Country
UNITED STATES
Project Code
12VB1800, 폭 1500mm 플렉서블 기판에 산화물 박막 트랜지스터 증착을 위한 스퍼터 장비 실용화 기술 개발, Park Sang-Hee
Abstract
Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar.
KSP Keywords
gate electrode, insulating layer
Family
 
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Status Patent Country KIPRIS
Registered Transistor And Method Of Fabricating The Same KOREA KIPRIS
Registered TRANSISTOR AND METHOD OF FABRICATING THE SAME UNITED STATES