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Detail
Registered TRANSISTOR AND METHOD OF FABRICATING THE SAME
- Inventors
- Cho Sung Haeng, Park Sang-Hee, Hwang Chi-Sun
- Application No.
- 14800251 (2015.07.15)
- Publication No.
- 20150318363 (2015.11.05)
- Registration No.
- 9252222 (2016.02.02)
- Country
- UNITED STATES
- Project Code
- 12VB1800, 폭 1500mm 플렉서블 기판에 산화물 박막 트랜지스터 증착을 위한 스퍼터 장비 실용화 기술 개발, Park Sang-Hee
- Abstract
- Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar.
- KSP Keywords
- gate electrode, insulating layer
- Family
| Status | Patent | Country | KIPRIS |
|---|---|---|---|
| Registered | Transistor And Method Of Fabricating The Same | KOREA | KIPRIS |
| Registered | TRANSISTOR AND METHOD OF FABRICATING THE SAME | UNITED STATES |