본 발명은 정전기 방전 보호 회로에 관한 것이다. 본 발명의 정전기 방전 보호 회로는 기판 상에 형성된 딥 N웰, 딥 N웰 상의 우측에 형성되고, 제 1 P+확산영역, 제 1 N+확산영역, 제 2 P+확산영역, 및 플로팅 P+확산영역을 포함하는 제 1 P웰, 딥 N웰 상에 형성되고, 제 1 P웰의 좌측에 위치하고, 플로팅 N+확산영역, 제 3 P+확산영역, 제 2 N+확산영역을 포함하는 N웰, 및 딥 N웰 상에 형성되고, 제 N웰의 좌측에 위치하고, 제 4 P+확산영역과 제 3 N+ 확산영역 중 하나를 포함하는 제 2 P웰을 포함하고, N웰은 제 1 P웰과 제 2 P웰 사이에 위치하고, N웰과 제 2 P웰 사이의 간격은 N웰과 제 1 P웰 사이의 간격보다 좁고, 제 1 P+확산영역과 제 1 N+확산영역은 캐소드에 연결되고, 제 3 P+확산영역과 제 2 N+확산영역은 애노드에 연결되고, 제 2 P+확산영역과 제 4 P+확산영역은 상호 간에 연결되는 것을 특징으로 한다.
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