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Registered PHOTODETECTOR

Inventors
Jiho Joo, Kim Gyungock, In Gyoo Kim, Oh Jin Hyuk, Kim Sun Ae, Jang Ki Seok, Park Jaegyu, Kwack Myungjoon, Kim Sang Hoon
Application No.
14812981 (2015.07.29)
Publication No.
20160211402 (2016.07.21)
Registration No.
9728657 (2017.08.08)
Country
UNITED STATES
Project Code
14MB1300, Silicon Nanophotonics-based next-generation computer interface platform, Kim Gyungock
Abstract
Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.
KSP Keywords
Absorption layer, Contact layer, Ring structure, optical absorption
Family
 
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Status Patent Country KIPRIS
Registered Photodetector KOREA KIPRIS