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Registered PHOTODETECTOR

Inventors
Jiho Joo, Kim Gyungock, In Gyoo Kim, Park Jaegyu, Kim Sun Ae, Jang Ki Seok, Kwack Myungjoon, Kim Sang Hoon, Oh Jin Hyuk
Application No.
14812981 (2015.07.29)
Publication No.
20160211402 (2016.07.21)
Registration No.
9728657 (2017.08.08)
Country
UNITED STATES
Project Code
14MB1300, Silicon Nanophotonics-based next-generation computer interface platform, Kim Gyungock
Abstract
Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.
KSP Keywords
Absorption layer, Contact layer, Optical absorption, Ring structure
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