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Registered HIGH RELIABILITY FIELD EFFECT POWER DEVICE AND MANUFACTURING METHOD THEREOF
- Inventors
- Jongmin Lee, Min Byoung-Gue, Hyung Sup Yoon, Jong-Won Lim, Kim Seong-Il, Kim Dong-Young, Jung Hyunwook, Ju Chull Won, Dong Min Kang, Jae Won Do, Kyu Jun Cho, Hae Cheon Kim, Hokyun Ahn, Lee Sang-Heung
- Application No.
- 15238492 (2016.08.16)
- Publication No.
- 20170133471 (2017.05.11)
- Registration No.
- 9780176 (2017.10.03)
- Country
- UNITED STATES
- Project Code
- 14PB5600, Development of Core Modules and Transceiver for Digital Wireless Communications Based on Software, Hyung Sup Yoon
- Abstract
- The present invention relates to a high reliability field effect power device and a manufacturing method thereof. A method of manufacturing a field effect power device includes sequentially forming a transfer layer, a buffer layer, a barrier layer and a passivation layer on a substrate, patterning the passivation layer by etching a first region of the passivation layer, and forming at least one electrode on the first region of the barrier layer exposed by patterning the passivation layer, wherein the first region is provided to form the at least one electrode, and the passivation layer may include a material having a wider bandgap than the barrier layer to prevent a trapping effect and a leakage current of the field effect power device.
- KSP Keywords
- Barrier layers, Buffer layer, High Reliability, Leakage current, Manufacturing method, Power device, Transfer layer, Trapping effects, field effect, passivation layer
- Family
| Status | Patent | Country | KIPRIS |
|---|---|---|---|
| Registered | High reliability field effect power device and manufacturing method of the High reliability field effect power device | KOREA | KIPRIS |