15MI1500, Development on Semi-conductor based Smart Antenna for future mobile communications,
Park Bong Hyuk
Abstract
고체 플라즈마 안테나용 수직 핀 다이오드가 개시된다. 수직 핀 다이오드는 P-유형 영역, 진성 영역 및 N-유형 영역이 순서대로 수직 방향으로 배치되어서 내부에 형성되어 있는 반도체 기판, P-유형 영역에 전기적으로 접촉되도록 반도체 기판의 일면 상에 형성되어 있는 제1 전극 및 N-유형 영역에 전기적으로 접촉되도록 반도체 기판의 타면 상에 형성되어 있는 제2 전극을 포함한다. 그리고 P-유형 영역과 N-유형 영역은 각각 반도체 기판의 상하 표면부에 서로 대향하도록 배치되어 있다.
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J. Kim et. al, "Trends in Lightweight Kernel for Many core Based High-Performance Computing", Electronics and Telecommunications Trends. Vol. 32, No. 4, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
J. Sim et.al, “the Fourth Industrial Revolution and ICT – IDX Strategy for leading the Fourth Industrial Revolution”, ETRI Insight, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
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