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Registered P-TYPE OXIDE SEMICONDUCTOR, METHOD FOR PRODUCING P-TYPE OXIDE SEMICONDUCTOR, AND TRANSISTOR COMPRISING THE SAME
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P-TYPE OXIDE SEMICONDUCTOR, METHOD FOR PRODUCING P-TYPE OXIDE SEMICONDUCTOR, AND TRANSISTOR COMPRISING THE SAME
- Inventors
- Cho Sung Haeng, Sooji Nam, Hwang Chi-Sun, Cho Kyoung Ik, Su Jae Lee, Jae-Eun Pi
- Application No.
- 10-2016-0154389 (2016.11.18) KIPRIS
- Publication No.
- 10-2018-0010939 (2018.01.31)
- Registration No.
- 10-2277143-0000 (2021.07.08)
- Country
- KOREA
- Project Code
- 16ZB1200, Developement of key material and device technologies for next generation semiconductor devices with extreme performance, Leem Young Ahn
- Abstract
- 본 발명의 실시예들에 따른 p형 산화물 반도체는 알칼리 금속 및 주석 산화물을 포함한다.