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Registered OPTICALLY RESTORABLE SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING THE SAME, AND FLASH MEMORY DEVICE USING THE SAME
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OPTICALLY RESTORABLE SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING THE SAME, AND FLASH MEMORY DEVICE USING THE SAME
- Inventors
- Lim Jungwook, Sun Jin Yun, Seong Hyun Lee, Jung Kwang Hoon, Jeho Na, Kim Tae Yoon
- Application No.
- 15993765 (2018.05.31)
- Publication No.
- 20180350852 (2018.12.06)
- Registration No.
- 10483300 (2019.11.19)
- Country
- UNITED STATES
- Project Code
- 17HB1300, Fundamental technologies of two-dimensional materials and devices for the platform of new-functional smart devices, Sun Jin Yun
- Abstract
- Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.
- Family
| Status | Patent | Country | KIPRIS |
|---|---|---|---|
| Registered | SEMICONDUCTOR DEVICE USING LIGHT RESTORING, METHOD FOR FABRICATING THE SAME, FLASH MEMORY DEVICE USING THE SAME | KOREA | KIPRIS |