등록
일방향성 광 복원성을 이용한 다중 상태 전자소자
- 발명자
-
임정욱, 윤선진, 김태윤, 정광훈, 나제호, 이성현
- 출원번호
-
15993765 (2018.05.31)
- 공개번호
-
20180350852 (2018.12.06)
- 등록번호
- 10483300 (2019.11.19)
- 출원국
- 미국
- 협약과제
-
17HB1300, 차세대 신기능 스마트디바이스 플랫폼을 위한 대면적 이차원소재 및 소자 원천기술 개발,
윤선진
- 초록
- Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.
- KSP 제안 키워드
- Flash Memory, Semiconductor films, charge traps, flash memory device, gate electrode, interface charge, memory device, photo-responsive, semiconductor device
- 패밀리
-