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Registered OPTICALLY RESTORABLE SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING THE SAME, AND FLASH MEMORY DEVICE USING THE SAME

일방향성 광 복원성을 이용한 다중 상태 전자소자
이미지 확대
Inventors
Lim Jungwook, Sun Jin Yun, Seong Hyun Lee, Jung Kwang Hoon, Jeho Na, Kim Tae Yoon
Application No.
15993765 (2018.05.31)
Publication No.
20180350852 (2018.12.06)
Registration No.
10483300 (2019.11.19)
Country
UNITED STATES
Project Code
17HB1300, Fundamental technologies of two-dimensional materials and devices for the platform of new-functional smart devices, Sun Jin Yun
Abstract
Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.
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Status Patent Country KIPRIS
Registered SEMICONDUCTOR DEVICE USING LIGHT RESTORING, METHOD FOR FABRICATING THE SAME, FLASH MEMORY DEVICE USING THE SAME KOREA KIPRIS