온도 변화에 강건한 저전압 동작 회로 제어 방법 및 장치
강태욱, 이재진, 오광일, 이석호, 한규승, 김성은
- 10491208 (2019.11.26)
18ZB1200, 임플란터블 능동 전자소자 원천기술 개발,
- The inventive concept relates to a semiconductor device including a CMOS circuit and an operation method thereof. A semiconductor device according to an embodiment of the inventive concept includes a semiconductor circuit, a controller, and a voltage generator. The semiconductor circuit operates at a drive voltage to reduce the delay time between input and output as the temperature increases. The controller determines the malfunction of the CMOS circuit based on the difference between the source-drain current of the PMOS transistor and the source-drain current of the NMOS transistor as the temperature changes. The voltage generator generates or adjusts a body-bias voltage applied to the PMOS transistor or the NMOS transistor based on a malfunction determination of the controller. According to the inventive concept, malfunctions and performance deterioration occurring in a CMOS circuit operating at a low voltage may be reduced.
- KSP 제안 키워드
- AND operation, CMOS circuits, Delay Time, Drain current, NMOS transistor, Operation method, PMOS transistor, Source-drain current, Temperature change, bias voltage, body-bias, input and output, inventive concept, low voltage, performance deterioration, semiconductor device, voltage generator