등록
선택소자 내장형 3차원 비휘발성 기억소자 구조
- 발명자
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박배호, 윤성민, 임종필, 김정훈, 문승언, 강승열, 우지용, 윤찬수, 전지훈
- 출원번호
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17089286 (2020.11.04)
- 공개번호
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20210134813 (2021.05.06)
- 등록번호
- 11342344 (2022.05.24)
- 출원국
- 미국
- 협약과제
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19ZB1800, 초박막 구조 기반 고성능 멤리스터 소자를 이용한 뉴로모픽 하드웨어 개발,
문승언
- 초록
- The present disclosure relates to a memory device, and more particularly, to a memory device including a substrate, a plurality of vertical structures disposed on the substrate and including insulation layers and lower electrodes, which are alternately laminated with each other, wherein the vertical structures are aligned in a first direction parallel to a top surface of the substrate and a second direction crossing the first direction, an upper electrode disposed on a top surface and side surfaces of each of the vertical structures, and a first dielectric layer disposed between the upper electrode and the vertical structures to cover the top surface and the side surfaces of each of the vertical structures. Here, the first dielectric layer includes a ferroelectric material.
- KSP 제안 키워드
- dielectric layer, ferroelectric materials, memory device, vertical structure
- 패밀리
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