Registered
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Inventors
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박배호, 윤성민, Kim Jeong Hun, Im Jong Pil, Kang Seung Youl, Moon Seungeon, Woo Jiyong, 전지훈, 윤찬수
- Application No.
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17089286 (2020.11.04)
- Publication No.
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20210134813 (2021.05.06)
- Registration No.
- 11342344 (2022.05.24)
- Country
- UNITED STATES
- Project Code
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19ZB1800, Development of Neuromorphic Hardware by using High Performance Memristor Device based on Ulta-thin Film Structure,
Moon Seungeon
- Abstract
- The present disclosure relates to a memory device, and more particularly, to a memory device including a substrate, a plurality of vertical structures disposed on the substrate and including insulation layers and lower electrodes, which are alternately laminated with each other, wherein the vertical structures are aligned in a first direction parallel to a top surface of the substrate and a second direction crossing the first direction, an upper electrode disposed on a top surface and side surfaces of each of the vertical structures, and a first dielectric layer disposed between the upper electrode and the vertical structures to cover the top surface and the side surfaces of each of the vertical structures. Here, the first dielectric layer includes a ferroelectric material.
- KSP Keywords
- dielectric layer, ferroelectric materials, memory device, vertical structure
- Family
-