등록
격리도를 향상시킨 FET 저항성 주파수 혼합기
- 발명자
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신동환, 장동필, 정진철, 문성모, 주인권, 김병학, 임준한, 염인복
- 출원번호
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17496984 (2021.10.08)
- 공개번호
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20220115986 (2022.04.14)
- 등록번호
- 11527996 (2022.12.13)
- 출원국
- 미국
- 협약과제
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20HH1900, [전문연구실] 위성탑재체 핵심원천기술 개발 ,
장동필
- 초록
- Provided is a FET resistive frequency mixing device having improved RF-LO and IF-LO isolations. The frequency mixing device includes: a field effect transistor (FET), a local oscillation matching circuit connected to a gate of the FET to transfer a local oscillation signal to the gate of the FET, a gate biasing circuit connected to the gate of the FET, a radio frequency (RF) matching circuit having a first terminal connected to a drain side of the FET and a second terminal serving as a RF terminal to receive or output a RF signal, an intermediate frequency (IF) matching circuit having a first terminal connected to the drain side of the FET and a second terminal serving as an IF terminal to receive or output an IF signal, and a series resonance circuit providing a path from the drain of the FET to ground for the local oscillation signal.
- KSP 제안 키워드
- Field-effect transistors(FETs), Intermediate frequency, Local oscillation, Mixing device, RF signal, Radio Frequency(RF), Radio frequency (rf), Series resonance circuit, biasing circuit, field effect, frequency mixing, matching circuit, resonance circuit, series resonance
- 패밀리
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