21HB3400, Development of LOI-based ultra-compact >50G/ch optical modulator technology for terabit-scale data communications,
Han Sang-Pil
Abstract
본 발명의 개념에 따른 광전 변환 장치는 기판, 상기 기판 상의 하부 클래드 층, 상기 하부 클래드 층 상의 광 도파로, 상기 광 도파로는 마주하는 한 쌍의 측면들을 포함한다. 상기 광 도파로의 적어도 하나의 측면을 덮는 다층 구조체 및 상기 광 도파로의 양 측면과 인접하게 배치되는 전극들 및, 상기 전극들과 다층 구조체를 덮는 상부 클래드 층을 포함한다. 상기 다층 구조체는 제1 유전층 및 제2 유전층을 포함하되, 상기 제1 유전층과 상기 제2 유전층은 교대로, 반복적으로 적층되고, 상기 제1 유전층 및 상기 제2 유전층 중 적어도 어느 하나는 상기 상부 클래드 층과 다른 유전 물질을 포함하되, 상기 제1 유전층의 두께 및 상기 제2 유전층의 두께는 상기 상부 클래드 층의 두께보다 작다.
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J. Kim et. al, "Trends in Lightweight Kernel for Many core Based High-Performance Computing", Electronics and Telecommunications Trends. Vol. 32, No. 4, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
J. Sim et.al, “the Fourth Industrial Revolution and ICT – IDX Strategy for leading the Fourth Industrial Revolution”, ETRI Insight, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
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