Registered
비휘발성 메모리에 고속 영구적 쓰기 장치 및 방법
- Inventors
-
이상민, 차명훈, 안백송, 김홍연
- Application No.
- 2021-0168324 (2021.11.30)
- Registration No.
- 2835855 (2025.07.15)
- Country
- KOREA
- Project Code
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21HS3300, Researches on next generation memory-centric computing system architecture,
Kim Kang Ho
- KSP Keywords
- Volatile memory, non-volatile, non-volatile memory(NVM or NVRAM)
- Family
-