Smart antenna, mobile communication, semi-conductor
Funding Org.
미래창조과학부
Research Org.
한국전자통신연구원
Project Code
15MI1500, Development on Semi-conductor based Smart Antenna for future mobile communications,
Park Bong Hyuk
Abstract
I-2 해당 연도 추진 실적 계획 1. 반도체 플라즈마 디바이스 셀 설계 추진실적 ● 반도체 플라즈마 디바이스 셀을 위한 PIN 다이오드 특성 분석 완료 - PIN 다이오드에 전압을 인가하면 intrinsic 영역에 캐리어(Plasma) 가 생성됨 - 동작 전압에 따른 전하밀도 분석 : 전하 밀도가 1.5 V부터 급격하게 증가하여 2.5V에서 포화됨 - 셀 크기에 따른 전하밀도 분석 . Intrinsic 길이(Li)에 따른 전하밀도 분포 : Diffusion length를 고려하여 Li는 140μm 보다 작게 설계해야 전하밀도를 효과적으로 높일 수 있음 . Contact 길이(Lc)에 따른 전하밀도 분포 : (Lc)가 작을수록 더 높은 전하밀도를 얻으나 그 변화가 크지 않음 . Junction 깊이(Xi) 에 따른 전하밀도 분포 : (Xi)에 따라서는 변화가 미미함 - Intrinsic 도핑 농도 (Ni)에 따른 전하 밀도 분석 : (Ni)가 감소할수록 더 높은 전하 밀도를 얻을 수 있음 - Intrinsic 길이(Li)에 따른 Conductivity 분석 : 채널 길이가 감소할수록 같은 동작 전압에서 더 높은 전하밀도를 얻을 수 있음 ● 시뮬레이션에서 얻은 결과를 토대로 반도체 플라즈마 디바이스 셀 (PIN 다이오드)의 Mask 설계 완료 - Intrinsic 길이 (Lint) Intrinsic 너비 (W) 와 Contact 길이 ((Lc)에 따른 제작된 소자의 특성을 보기 위해 split함 - Current crowding effect와 Miss align을 고려하여 Via hole 설계 완료 ※ 산출물: 플라즈마 디바이스 단위 셀 설계서
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