가. SiC III-V nitride wide band gap 반도체소재의 첨단기술 조사 SiC를 포함한 wide band gap 소재에 대하여 물리적인 특성 및 광전소자 응용성 등의 첨단기술을 조사하였다. 특히 최근 들어 연구가 활성화하고 있는 선진국 연구기관의 사례를 조사분석하였다. 나. Single source를 이용한 SiC 및 AIN 박막의 성장 공동연구기관인 한국화학연구소에서 single source 를 이용한 SiC, AIN 및 SiC/AIN 합금소재의 CVD 성장기술을 연구하였다. 이 기술은 저온공정에 유리하여 반도체 소자의 형성에 적합할 것으로 판단된다. 다. PECVD 비성질 SiC 의 열처리 기술에 대한 연구 PECVD 로써 증착된 비정질 SiC 박막을 특수 제작된 ample에서 열처리 하여 결정화시키는 실험을 수행하였다. 성분비와 결정화 정도를 분석하여, SiC의 단결정 성장에 대한 가능성을 연구하였다. 라. Wide band gap 소재의 광전소자 응용기술 연구 UV 영역의 단파장 광전소자 제작을 위한 wide band gap 신소재 및 소자 기술에 대한 실험을 바탕으로 연구결과를 정리하였다.
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