98MM2700, Development of Low Power and High Speed Bipolar Device Technology,
Yu Hyun Kyu
Abstract
1차년도에 베이스 폴리실리콘을 트랜치 안에 매립하고 에미터를 자동정렬 접 점시키는 공정을 CMP (Chemical Mechanical Polishing) 방법에 의해서 완전히 해 결한데 이어서 최종년도인 98년도에는 디바이스 특성에 큰 영향을 미치는 에미터 저항 개선을 위한 효과적인 공정기술을 개발함으로서 결과적으로 디바이스의 성 능이 목표치에 도달할 수 있었다. 또한 기생캐퍼시턴스 감소를 위한 공정기술과 함께 고주파 회로에서 필수적인 저잡음 고이득을 위한 고주파 소자를 위한 안정 적인 공정기술을 개발함으로써 공정조건 변화에 크게 영향을 받지 않고 전체적으 로 좋은 트랜지스터의 DC 특성을 얻었다. 의 주파수에 대한 잡음지수 NF는 컬렉터전류 1mA에서 각각 0.5, 1.1 dB로서 아 주 작은 값이었다.
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