ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Gan-Based Gate Length T-Shaped Gate Microwave Monolithic Integrated Circuits(MMIC) Microwave Integrated Circuits(MICs) W Band Maximum Oscillation Frequency Gate Recess Dc Characteristics Gate Width Small Signal Gain Device Performance Drain Current T-Gate Metamorphic High Electron Mobility Transistor(mHEMT) Frequency Range Ghz Band Rf Characteristics Gate Resistance Output Power Density Gallium Nitride (Gan) Compound Semiconductor Two-Step Gan Hemt Technology Power Gain Process Technology Noise Characteristic 6 Ghz Sic Substrate 28 Ghz And Gate 5 Nm Normally-Off Minimum Noise Figure 9.5 GHZ Ka-Band 60 Ghz Recess Depth 2 Mm S-Band Rf Components 94 Ghz Maximum Frequency Device Characteristics High Performance Gate Dielectric 30 Ghz Drain Voltage Field Plate X-Band Applications Mmic Power Amplifier Threshold Voltage Shift Maximum Output Power Gan Hemt Devices Conversion Gain Fabrication Process Components Technology Passivation Layer Driver Amplifier Nitride Layer Gan Fet Measurement System Wireless Communication Thermal Behavior Gate Insulator Dielectric Layer Schottky Barrier Diode(SBD) Single-Ended Double-Deck Drain Saturation Current Indium Content Low Temperature Cofired Ceramics(LTCC) Silicon Nitride Power Amplifier Mmic Radio Frequency (Rf) Power Added Efficiency(PAE) Gan Power Device High Gain Gan-On-Sic Hemt Device Fabrication Frequency Doubler Dry Etching Parasitic Capacitance Automotive Radar Systems Power Gan Next-Generation Input Power Key Components Etching Conditions High Power Applications Output Matching Ingaas Channel Rf Power Ku-Band Head Size Rf Applications Silicon Substrate 110 Ghz Epitaxial Layer Off-State Leakage Citric Acid Equivalent Circuit Model Diode Ideality Factor Silicon Carbide(3C-SiC) Distribution Analysis Recess Etch Pulsed Power Key Device Gas Mixtures Noise Performance High Carrier Concentration Performance Degradation 18 Ghz Icp Etching High-Efficiency Power Amplifiers(PAs) Carrier Mobility Gate Electrode Mim Capacitor Via-Hole High Power Density Dc And Rf Performance Performance Improvement Hexagonal Boron Nitride(hBN) Transconductance (Gm) Conversion Loss Measurement And Analysis Etch Rates Ohmic Contact Resistance Algan/Gan Heterostructure Etching Rate Metal Contact Aperture Coupled Millimeter-Wave Band Electron Beam Lithography 5g Base Station Annealing Process On/Off Current Ratio Electrical Characteristics Three-Terminal Current Status Radiation Tolerance Wide Band Gap Active Devices Gate Leakage Current Recessed Gate Antenna Gain Proton Irradiation 3 V Cvd Diamond Gaas Substrate Matching Circuit Standard Deviation(STD) High Power Amplifier Short-Channel Effects Dc Measurements Current Density 5.8 Ghz Input Matching Power Characteristics Image Sensor Lithography Process Microwave Characteristics Q-Band 3.5 Ghz Design And Fabrication Epitaxial Structure Etch Depth Subthreshold Swing(SS) Schottky Diode Cost-Effective Technology Trends Metal-Insulator-Semiconductor(MIS) Rf Measurement Radar Sensor Band Power Dielectric Resonator Antenna(DRA) Electrical Properties Temperature Difference Enhancement Mode(E-mode) Gate Foot E-Beam Lithography Design Guidelines Length Scaling Smart Lighting Transistor Devices Total Current Critical Factors Frequency Characteristics Fifth-Generation(5G) Gan Heterostructures Gan Hpa Radiation Resistance 16 Nm Central Region Intelligent Vehicle Lithography Technology Parasitic Coupling Superluminescent Diodes(SLDs) Temperature Characteristics Two-Stage Current-Voltage Characteristics 5g Communication Cruise Control System Compact Layout High Linearity Material Properties Output Frequency Stress Measurement Thermal Transport Temperature Dependence Molybdenum-Copper Noise Modelling Operating Condition Oxygen Plasma Treatment Saturation Velocity 20 Nm Different Modes Field Concentration Geometric Parameters High-Frequency Power Amplifier Leakage Current Reduction Large Signal Stable Process 77-Ghz Automotive Radar Transmitter Optical Sub-Assembly Die-Attach Directly Modulated Load Impedance Pinch-Off Signal Modeling Laser Transmitter Fluoride-Based Plasma Treatment Plasma Etching Process S-Parameter Measurement Transit Time Bias Circuit Atomic Layer Deposition Method Design Techniques Non-Uniformity Service Market 5g Mobile Communication Bragg Reflector Complementary Metal-Oxide-Semiconductor(CMOS) Down Converter Millimeter-Wave Frequency Reflect Signal Sin Deposition High Breakdown Voltage Hydrogen Silsesquioxane(HSQ) Drain Leakage Current Current Consumption Common-Source Lna Double-Gate(DG) Linear Energy Transfer(LET) Source Resistance Active Phased Array Antenna Dispersion Power Penalty Local Oscillation Key Process Low Energy Main Patch Normally-On Device Operating Temperature Radar Applications S-Parameter Extraction Rf Front-End Surface Treatments Gate Voltage Integrated Circuit Technology Wave Front Microstrip Line Schottky Barrier Height Temperature-Controlled Nanometer-Scale Proton Radiation Wlan Applications Internal Source Low-Cost Mmic Amplifiers Metal Pattern Microstrip Circulator Number Of Fingers Degradation Mechanism Gaas Mmic Single Power Supply High Voltage Operation Ghz Vco Input Return Loss Packaging Technology Surface Wave Algan/Gan Mishemts Drain Electrode Gan Transistor Gan On Silicon Load-Pull 72 Ghz Frequency Efficiency High-Quality Model And Simulation Performance And Reliability Threshold Current Broadband Mmic Current Gain Cutoff Frequency Degradation Factor External Cavity Laser(ECL) Rf Devices Channel Structure Doping Concentration Fin-Gate Ground Plane(GP) Low-Rate Third-Order Intercept Temperature-Dependent Channel Mobility Dc Output Frequency Bandwidth High Temperature Ni-Based Signal Leakage Selective Area 200 Ghz Head Position Insulating Layer Matching Network Reference Device Comparative Study Device Isolation Etching Solution Thermal Conductivity Target Current Frequency Multiplier Interfacial States Pulsed Mode Temperature Distribution Characteristics Thin Film Resistor Electrical Analysis Insertion Layer Large Area Bandwidth Enhancement De-Embedding Gold Plating Infrastructure Support Plasma Process Pulse Width Protection Layer Breakdown Characteristics Communication Services Drain Bias Electric Field Inalas/Ingaas Hemt Lo Power Pseudomorphic High Electron Mobility Transistor(pHEMT) Wideband Operation High Power Devices Current Direction Noise Level Surface Characteristics Improved Model Global Optimization Gate Control Single-Gate(SG) Contact Region Image Rejection Mixer In Situ/Ex Situ Millimeter-Wave Monolithic Integrated Circuits Power Hemt Shunt Capacitors Measurements Results Organic Chemical Process Development Satellite Communication System Three-Stage X-Band Radar Electrochemical Reactions Channel Properties Channel Current Inductively Coupled Plasma Etching Impedance Match Model Parameter Research Institute Semiconductor Technology Sige Hbt 2.4 Ghz Communication Infrastructure Diode Parameters Etching Technique High Signal Spurious Suppression Wet Chemical Etching Antenna Bandwidth Compact Size Electrode Process Input Signal Coulomb Scattering Figures Of Merit Insertion Loss Simulation And Measurement Algan/Gan-On-Si Diamond Substrate Plate Structure Semiconductor Heterostructure State Performance Light Source Metal Interface Measuring Channel Total Ionizing Dose Sin Passivation 3-Db Bandwidth Wide Temperature Range Drain-Induced Barrier Lowering(DIBL) Gain Compression Large Size Power And Efficiency Characteristics System In Package(SIP) Yttrium Iron Garnet Front Side Ghz Range Measurement Data Optimal Design Resistive Mixer Schottky Layer Si Substrate Dc Biasing National Defense Trapped Charge Adaptive Cruise Control(ACC) Heterostructure Field Effect Transistors Large-Scale Source And Drain Unit Cell 100 W-Class Device Layout Off-Chip Radar Image Width Effects Broad Bandwidth Bicmos Technology High-Speed Devices Standard Single-Mode Fiber Solid State Power Amplifier Trapping Effects Double Plasma Dc Performance Dynamic On-Resistance Gan Power Amplifier Gallium Arsenide Applied Physics Active Region Balanced Type High Power Performance Planar-Gate Scattering Parameters(S-parameters) Platform Development Wireless Local Area Network(WLAN) Energy Band Gap Output Power And Efficiency Ohmic Contact Formation Tunable Lasers Bilayer Resist Dual Gate(DG) Higher Frequency Millimetre-Wave Transmission Line Electrochemical Potential Gate Annealing High Reliability Ohmic Electrode Control Gate Channel Length Duty Cycle(DC) Improved Performance Packaging Processes Patch Resonator Output Characteristics Radiation Hardness Temperature Effect Amplifier Design Gate Operation Input-Output Network Analyzer(NA) Saturation Characteristics Gate Fabrication Fin Width Process Conditions Schottky Contacts 300 Ghz 11 Ghz Displacement Damage High-Frequency Applications On-Wafer Three-Layered Low Noise Amplifier (Lna) Sheet Resistance Transfer Characteristics Treatment Process Depletion-Mode High Output Power Sapphire Substrates Voltage Stability Floating Gate First Stage Ltcc Substrate Small-Signal Model Continuous Wave(CW) Carrier Density Direct Current(DC) Electron Beam Exposure Interface Trap Image Signal Measurement Results Trade-Off Transport Mechanism Depth-Dependent Extrinsic Gate Capacitance Reactive Ion Etching Single Supply Thermal Stress Ramp-Up Wide Beamwidth Coupling Effects Cascade Structure Manufacturing Processes Single-Layer Size Dependence Channel Layer Trans-Impedance Amplifier(TIA) Base Station Applications Gate Bias Gate Coupling Process Parameters Power Levels Silicon-Germanium(SiGe) Wet Etching Process Forward-Looking Inalas/Ingaas Mhemt Operating Frequency 7 Mm Antenna Structure Fabrication Method Ion Implantation Patch Antenna Plasma-Enhanced Chemical Vapor Deposition(PECVD) Source Degeneration