ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts T-Shaped Gate Gate Length W-Band Microwave Monolithic Integrated Circuits(MMIC) Microwave Integrated Circuit Gan-Based Components Technology Gate Recess Compound Semiconductor Metamorphic High Electron Mobility Transistor(mHEMT) Gate Width Drain Current Frequency Range Maximum Oscillation Frequency Dc Characteristics Noise Characteristics Power Gain 6 Ghz Output Power Density Small Signal Gain T-Gate Device Performance Gate Resistance Ghz Band Two-Step Rf Characteristics 5 Nm Normally-Off Gan Hemt Technology 28 Ghz Mmic Power Amplifier Threshold Voltage Shift S-Band Gate Dielectric Fabrication Process Gallium Nitride (Gan) Ka-Band Device Characteristics 94 Ghz Maximum Output Power 60 Ghz Conversion Gain X-Band Applications Sic Substrate Maximum Frequency 9.5 GHZ Drain Voltage Minimum Noise Figure High Gain 30 Ghz Input Power Power Added Efficiency(PAE) Dry Etching Ohmic Contact Measurement System Next-Generation Drain Saturation Current Single-Ended Driver Amplifier Low Temperature Cofired Ceramic(LTCC) Gan Hemt Devices Gan Power Device National Defense 110 Ghz And Gate Rf Power Etching Conditions Automotive Radar Systems Platform Development Head Size Indium Content Gan-On-Sic Hemt Epitaxial Layer Thermal Behavior Nitride Layer Field Plate Power Amplifier Mmic 2 Mm Gate Insulator Recess Depth Gan Fet Silicon Nitride Dielectric Layer Schottky Barrier Diode(SBD) Frequency Doubler Silicon Substrate Optical Communications Matching Circuit Measurement And Analysis 18 Ghz Band Power Electron Beam Lithography Radar Sensor Gate Capacitance Current Density Millimeter-Wave Band 5g Base Station Algan/Gan Heterostructure Three-Terminal Active Devices High Power Applications Antenna Gain Carrier Mobility Proton Irradiation Pulsed Power Dielectric Resonator Antenna(DRA) Technology Trends Recess Etch High Power Density Gas Mixture Lithography Process 3 V Enhancement-Mode Microwave Characteristics Standard Deviation(STD) Radio Frequency (Rf) Q-Band Design And Fabrication Wide Band Gap Gaas Substrates Etch Depth Noise Performance Diode Ideality Factor Recessed Gate High Performance Metal Contact Co-Fired Ceramics Conversion Loss Dc Measurements Ingaas Channel Gate Foot Length Scaling Off-State Leakage Passivation Layer Smart Lighting Citric Acid Etching Rate Aperture Coupled On/Off Current Ratio High-Efficiency Power Amplifiers(PAs) Temperature Difference Output Matching Metal-Insulator-Semiconductor(MIS) Cvd Diamond Transconductance (Gm) Sensor Node Icp Etching Device Fabrication Distribution Analysis Via-Hole Etch Rates Current Status Power Characteristics 5.8 Ghz Wet Etching Double-Deck Radiation Tolerance E-Beam Lithography Key Device Mim Capacitor Light Sources Performance Degradation Schottky Diode Rf Applications High Carrier Concentration Threshold Current Research Institute Algan/Gan-On-Si Target Current Process Conditions Nanometer-Scale Gain Compression Standard Single-Mode Fiber Electrical Properties(I-V curve) Gate Electrode Communication Infrastructure Linear Energy Transfer Electrode Process Laser Transmitter Millimetre-Wave Measurement Results X-Band Radar Input Return Loss Inductively Coupled Plasma Etching Ground Planes(GP) Size Dependence Stress Measurement 100 W-Class Heterostructure Field Effect Transistors Electrochemical Reaction(ECR) Output Frequency Semiconductor Technology Oxygen Plasma Treatment Power Levels Source Resistance Satellite Communication System Solid State Power Amplifier Large Size Degradation Mechanism Matching Network Cruise Control System Channel Structure Control Systems Transmission Line System In Package(SIP) Coulomb Scattering Power Hemt Compact Size Front Side Duty Cycle(DC) Gate Coupling Source And Drain Pinch-Off Control Gate High Power Amplifier(HPA) Treatment Process Breakdown Characteristics Trapping Effects Dc And Rf Performance Mmic Amplifiers Resistive Mixer Balanced Type Integrated Circuit Technology High-Speed Devices Bilayer Resist Gate Operation Asynchronous Processor Third-Order Intercept Three-Stage Noise Level Reflect Signal Simulation And Measurement Model Parameter Low-Rate 300 Ghz Plasma-Enhanced Chemical Vapor Deposition(PECVD) Base Station Applications Patch Resonator Global Optimization Gate Fabrication Surface Wave Bias Circuit Depletion-Mode Radiation Resistance High-Quality Gan Transistor Network Analyzer Adaptive Cruise Control(ACC) Normally-On Device Gaas Mmic Semiconductor Heterostructure Wide Beamwidth Channel Mobility Pseudomorphic High Electron Mobility Transistor(pHEMT) Coupling Effects Silicon Carbide(3C-SiC) Ghz Vco Proton Radiation Bandwidth Enhancement High Signal Gate Leakage Current Gallium Arsenide(GaAs) Lithography Technology Operating Temperature Trapped Charge Drain Electrode Cost-Effective S-Parameter Extraction 5g Mobile Communication Single Power Supply Etching Technique Diode Parameters Shunt Capacitors Applied Physics Schottky Layer Subthreshold Swing(SS) High Breakdown Voltage Device Layout Insertion Loss Annealing Process Drain Bias Measurement Data Superluminescent Diodes(SLDs) Continuous Wave(CW) Double-Gate(DG) Total Ionizing Dose Gold Plating Diamond Substrate Floating Gate Wireless Local Area Networks(WLANs) Hydrogen Silsesquioxane Ni-Based Amplifier Design Three-Layered Ultralow Power(ULP) Pulsed Mode 200 Ghz Ku-Band Gate Control Unit Cell Wide Temperature Range Saturation Velocity Rf Measurement Directly Modulated Forward-Looking Yttrium Iron Garnet Image Rejection Mixer Input And Output Model And Simulation Single-Layer Algan/Gan Mishemts Total Current Etching Solution Fin Width Atomic Layer Deposition Method Input Signal In Situ/Ex Situ Schottky Barrier Height Antenna Structure Non-Uniformity Ltcc Substrate Plasma Process Gan Power Amplifier De-Embedding Molybdenum-Copper Central Region Selective Area Gate Voltage 7 Mm Ion Implantation Width Effects Output Characteristics Sin Passivation Communication Services Design Techniques Gate Bias Large-Scale Dynamic On-Resistance High Temperature Operating Frequency Fabrication Method Schottky Contacts 5g Communications Channel Layer Current Consumption Complementary Metal-Oxide-Semiconductor(CMOS) Scattering Parameters(S-parameters) 20 Nm Broad Bandwidth Lo Power Gan On Silicon Metal Interface Radar Image Inalas/Ingaas Hemt Bicmos Technology Image Sensor Insertion Layer External Cavity Laser Degradation Factor Surface Characteristics Wideband Operation Load Impedance Sin Deposition Temperature Distribution Characteristics Comparative Study Reference Device High Voltage Operation Impedance Match Main Patch High Linearity 77-Ghz Automotive Radar Single-Gate(SG) Process Technology Dispersion Power Penalty Microstrip Circulator Fin-Gate Improved Model Transmitter Optical Sub-Assembly Wlan Applications Different Modes Temperature-Dependent Spurious Suppression Input Matching Radar Applications Double Plasma Operating Conditions Millimeter-Wave Monolithic Integrated Circuits Frequency Multiplier Sige Hbt S-Parameter Measurement Image Signal Ohmic Electrode On-Wafer Off-Chip Down Converter Inalas/Ingaas Mhemt State Performance Temperature Dependence Reactive Ion Etching(RIE) Epitaxial Structures Low Noise Amplifier (Lna) Bragg Reflector High Output Channel Properties Temperature Characteristics Metal Pattern Plasma Etching Process Insulating Layer Stable Process Signal Modeling High Power Devices Patch Antenna Thermal Conductivity Single Supply Low Energy Displacement Damage Common-Source Local Oscillation Silicon-Germanium(SiGe) Packaging Technology Temperature-Controlled High-Frequency Applications Ramp-Up Measuring Channel 16 Nm Electrochemical Potential Sapphire Substrates 3.5 Ghz Signal Leakage Dc Output Antenna Bandwidth Fluoride-Based Plasma Treatment Frequency Bandwidth Gan Hpa Contact Region Fifth Generation(5G) Intelligent Vehicle Radiation Hardness Manufacturing Processes Large Area Frequency Efficiency Device Isolation Dual Gate(DG) Gan Heterostructures Current Direction Electron Beam Exposure Low-Cost Channel Current Temperature Effect Channel Length Current Gain Cutoff Frequency Broadband Mmic Dc Biasing Trans-Impedance Amplifier(TIA) Wet Chemical Etching Service Market Tunable Lasers Doping Concentration Pulse Width Transistor Devices Current-Voltage Characteristics Gate Annealing Improved Performance Surface Treatments Si Substrate Performance And Reliability High Power Performance Saturation Characteristics