ETRI-Knowledge Sharing Plaform

Schottky Barrier Diode(SBD) Breakdown Voltage(BDV) Normally-Off Algan/Gan-On-Si High Electron Mobility Transistor(HEMT) Sacrificial Layer Forward Current Noise Level Reverse Leakage Current Field-Effect Transistors(FETs) Acoustic Sensor Bottom Electrode Power Semiconductor Acoustic Device High Thermal Conductivity Channel Width Electrical Characteristics Field Plate Micro-Electro-Mechanical System(MEMS) Dry Etching Piezoelectric Membrane Silicon Nitride Membrane Temperature Test Gaas Substrates Maximum Deflection Zero-Bias 4h-Sic Depletion Mode High Performance Power Conversion System Plasma Treatment Silicon Carbide(3C-SiC) Etching Process Low Temperature Cofired Ceramic(LTCC) Printed Circuit Board(PCB) Piezoelectric Thin Film Trade-Off Communication Technologies Chemical Mechanical Polishing(CMP) Forward And Reverse Ltcc Substrate Reverse Recovery Charge Switching Loss Si Wafer Sound Pressure Level Dc-Dc Converters Gate Bias Low Noise Amplifier(LNA) Pfc Converter Surface Passivation Zinc Oxide(ZnO) Algan/Gan Hfet Boost Converter High Power Conversion Efficiency Laser Doppler Vibrometer Gate Recess Integrated Process Power Electronics Structural Changes Surface Micromachining 2 Mm Conversion Systems Enhancement-Mode Low Stress Low Turn-On Voltage Design Evaluation Components Technology Design Rule Electroplated Cu Energy Loss Ground-Signal-Ground Gap Structures Gate Electrode High-Efficiency Converter High Voltage Heat Dissipation Rate High Gain Heat Sink Ict Convergence Load Conditions Low Leakage Current Major Switching Multi-Frequency Mechanical Vibration Metal Plate Mass Spectrometry Analysis MOS-HEMT Membrane Diameter Metal Oxide Semiconductor N-Type Optical Axis Off-State Stress Platform-Based Resistance Ratio Sub-Ppm Thermal Conduction Third-Order Intercept Point Temperature Humidity Bias(THB) Vacuum Pump Water Pressure Working Temperature Ultra-Thin Heat Control Device Structure Drop-Coating Vibration Environment 700 V Algan/Gan Mis-Hemt Activation Ratio Au Nanoparticles(Au-NPs) Air-Gap Bias Circuit Built-In Voltage Battery Voltage Bipolar Junction Transistor Chip Package Field Metal Gan On Sic Full-Load Gate Fabrication Gate Leakage Heat Pipe Gan Hfets Initialization Vector(IV) In-Situ Low-Rate On-Resistance Need For Oxide Etch Passive Alignment Polymer Composites Recessed Gate Sic Surface Sandwich Structure Treatment Process Vibration Exciter Dopant Activation 900 V Axis Alignment Built-In Potential Carbon Black Cascode Gan Fet Cascode Structure Continuous Wave(CW) Cost-Effective Drain Current Electrical Signal First Stage Electric Bike Forward Voltage High Temperature Storage Heat Flux Led Lighting Multilayer Circuit National Defense Operating Temperature Planar Lightwave Circuit(PLC) Semiconductor Device Reverse Current Sensing Electrodes Substrate Surface Sintered Wick Silicon Membrane Smd Package Through Silicon Vias(TSV) Thermal Stress Smart Lighting Support Project Threshold Voltage(Vth) Thermal Vias 5 Nm Metal Ring Synchronous Buck Promotion Strategy Ac Voltage Acoustic Pressure Dissipation Method Design And Analysis Dual Output Converter Etching Conditions Fabrication Tolerance Gan Diode Gap Cavity Gallium Nitride (Gan) Hard Switching High Speed Switching High Switching Speed Heat Transfer Gap Height I-V Measurement Instrumentation Amplifier Lateral Misalignment Metal-Insulator-Semiconductor(MIS) Open Circuit Peak Electric Field Polymer Waveguide Platform Development Rf Power Semiconductor Package Sensor Material Secondary Ion Mass Spectrometry Schottky Barrier Height Storage Life Thermal Treatments Thermal Oxidation Voltage Characteristics Via-Hole Metal Layer As 2 Al Film Al Doping Al Concentration Bulk Micromachining Bridge Structure Bonding Wires Current Status Cmp Process Device Performance Dynamic Ron Fabrication Method Embedded Cavity Frequency Range Gas Sensors Large-Scale Low-Power Operation Light Sources Micromachining Process Non-Recessed Polymer-Based Read-Out Resistance Matching Schottky Contacts Single-Mode Fiber(SMF) Si Mems Signal Line Self-Heating Thermal Characteristics Thermally Annealing Technology Cad Multi-Layer Substrate Fluorine Ions Stress-Free Anode Structure Avalanche Photo Diode(APD) Control Circuit Current Density Capacitive Mems Drain Leakage Current Device Size Compound Semiconductor High-Efficiency Operation Gas Concentration Impedance Converter Low Parasitic Inductance Load Impedance Microwave Integrated Circuit Microwave Monolithic Integrated Circuits(MMIC) Maximum Output Power Mesa Etching Matching Circuit Measured Output Mems Devices Poly-Silicon P-Doping Reverse Voltage Reverse Recovery Time Si Surface Etching Solar Cells Small Form Factor Single-Input Silicon Substrate Process Technology Reverse Bias Algan/Gan Heterostructure Buck Converter Current Collapse Clean Air Critical Inductance Circular-Type Electronic Nose System Efficiency Improvement Frequency Response(FreRes) High Switching Frequency Inverter Topology Input Voltage Low Voltage Low Onset Voltage Mems Microphone Novel Device Optical Fiber Si-Based Sic Power Devices Switching Power Saturated Output Power Storage Temperature Soft Switching Stabilization Time Short Distance Treatment Effects Theoretical Analysis Topology Design Voltage Shift Zero-Voltage Switching Piezoelectric Power Generator Recess Depth 48 V Back Grinding Cmos Process Doping Profile Doping Method Drain Voltage Deep Reactive Ion Etching Front-Side High Power Density Lift-Off Process Low Switching Low-Temperature Annealing Minimum Noise Figure Memristor Device Neuromorphic Hardware Output Voltage Package Substrate Ring Structure Reliability Testing Source Region Standard Cmos Si Substrate System Architecture Switching Conditions Thick Photoresist Technology Foresight Thin Structure 3 V 16 Nm Capacitive-Type