ETRI-Knowledge Sharing Plaform

Schottky Barrier Diode(SBD) Breakdown Voltage(BDV) Normally-Off Algan/Gan-On-Si Sacrificial Layer Field Plate High Electron Mobility Transistor(HEMT) Reverse Leakage Current Dc-Dc Converters Acoustic Sensor Bottom Electrode Silicon Carbide(3C-SiC) Noise Level Forward Current Recessed Gate Threshold Voltage(Vth) Acoustic Device Communication Technologies High Thermal Conductivity Compound Semiconductor Electrical Characteristics Micro-Electro-Mechanical System(MEMS) Power Electronics 2 Mm Enhancement-Mode Voltage Shift Surface Micromachining Temperature Test Conversion Systems High Frequency(HF) Low Turn-On Voltage Low Stress Piezoelectric Membrane Silicon Nitride Membrane Ohmic Contact Gaas Substrates Maximum Deflection Zero-Bias Depletion-Mode Gan On Sic High Performance 4h-Sic Power Conversion System 5 Nm Cost-Effective Drain Current Etching Process Low Temperature Cofired Ceramic(LTCC) Substrate Surface Piezoelectric Thin Film Printed Circuit Board(PCB) Switching Loss Si Wafer Chemical Mechanical Polishing(CMP) High Switching Speed Ltcc Substrate Reverse Recovery Charge Secondary Ion Mass Spectrometry Voltage Characteristics Sound Pressure Level Self-Heating Fluorine Ions Gate Bias Zinc Oxide(ZnO) Low On-Resistance Low Noise Amplifier(LNA) Surface Passivation Algan/Gan Hfet Boost Converter Current Density Gan-Based Laser Doppler Vibrometer Algan/Gan Heterostructure Channel Width High Power Applications Integrated Process Working Temperature 60 Hz Off-State Stress Optical Axis Temperature Humidity Bias(THB) Afm Measurement Components Technology Design Evaluation DC-AC Device Structure Design Rule Drop-Coating Electroplated Cu Energy Loss Front Side Gap Structures High-Speed Switching High Voltage Gate Electrode Heat Control Ground-Signal-Ground Gan Buffer High-Efficiency Converter Heat Dissipation Rate High Gain Heat Sink Ict Convergence Load Conditions Low Leakage Current Major Switching Multi-Frequency Mechanical Vibration Metal Plate MOS-HEMT Membrane Diameter Mass Spectrometry Analysis Metal Oxide Semiconductor N-Type Platform-Based Press-Pack Wide Band Gap Water Pressure Vacuum Pump Ultra-Thin Third-Order Intercept Point Thermal Conduction 700 V Need For Oxide Etch Atomic Layer Deposition Air-Gap Activation Ratio Au Nanoparticles(Au-NPs) Built-In Voltage Battery Voltage Bias Circuit Chip Package Capping Layer Dopant Activation Field Metal Full-Load Gan Transistor Gate Fabrication Gate Leakage Gan Hfets Heat Pipe In-Situ Initialization Vector(IV) Low-Rate Surge Current Set Up Series Resistance Pinch-Off Passive Alignment Polymer Composites Vibration Environment Vibration Exciter Sandwich Structure Sic Surface Treatment Process Smd Package 900 V National Defense Trade-Off Thermal Vias Axis Alignment Built-In Potential Cascode Structure Continuous Wave(CW) Cooling Needs Cascode Gan Fet Carbon Black Electrical Signal Electric Bike First Stage Forward Voltage Gan-On-Si Hemts Hybrid Electric Vehicle High Current Harsh Environments High Temperature Storage Heat Flux Isolation Region Led Lighting Metal Ring Multilayer Circuit Reverse Breakdown Reverse Current Rf Amplifier Synchronous Buck Sintered Wick Subthreshold Slope(SS) Size Reduction Surface Area Planar Lightwave Circuit(PLC) Promotion Strategy 25 Years Silicon Membrane Through Silicon Vias(TSV) Thermal Stress Support Project Smart Lighting Storage Life Algan/Gan Mishemts Ac Voltage Ohmic Metal Open Circuit Acoustic Pressure Design And Analysis Dissipation Method Dual Output Converter Etching Conditions Fabrication Tolerance Forward And Reverse Gan Diode Gap Cavity Gap Height Heat Transfer Gallium Nitride (Gan) Hard Switching Instrumentation Amplifier I-V Measurement Lateral Misalignment Metal Layer Metal-Insulator-Semiconductor(MIS) Material Analysis Rf Power Semiconductor Package Polymer Waveguide Plasma Dry Etching Power Switching Device Peak Electric Field Platform Development Via-Hole Thermal Treatments Sensor Material Schottky Barrier Height Thermal Oxidation Signal Line As 2 Al Film Stress-Free Al Concentration Bulk Micromachining Bridge Structure Bonding Wires Current Status Device Performance Dynamic Ron Embedded Cavity Frequency Range Fabrication Method Gan Device Gate Voltage Gan Capping Information And Communications Technologies(ICTs) Key Technology Low-Power Operation Large-Scale Multi-Layer Substrate Light Sources Material Properties Micromachining Process Cmp Process Non-Recessed Read-Out Resistance Matching Schottky Contacts Power Semiconductor Devices Polymer-Based Pfc Converter Pulse Current Variable Lateral Doping 20 Nm Single-Mode Fiber(SMF) Si Mems Thermal Characteristics Thermally Annealing Technology Cad Small Form Factor Single-Input Anode Structure Avalanche Photo Diode(APD) Capacitive Mems Control Circuit Drain Leakage Current Device Size High-Efficiency Operation Gate Oxide High Power Conversion Efficiency ICP-RIE Impedance Converter Low Parasitic Inductance Load Impedance Maximum Output Power Mesa Etching Mems Devices Microwave Integrated Circuit Microwave Monolithic Integrated Circuits(MMIC) Matching Circuit Reverse Bias Reverse Voltage Reverse Recovery Time Solar Cells Small Devices Silicon Substrate Specific On-Resistance Power Electronic Applications Power System Plasma Gas Plasma Damage P-Doping Poly-Silicon Process Technology Si Surface Etching Structural Changes Soft Switching Stabilization Time Optimal Conditions Optical Fiber Topology Design Bipolar Junction Transistors Buck Converter Critical Inductance Current Collapse Circular-Type Clean Air Edge Contact Electronic Nose System Fast Switching Speed Efficiency Improvement Frequency Response(FreRes) Fluoride Plasma Treatment Gate-To-Drain Spacing Gas Plasma High Switching Frequency Inverter Topology Input Voltage Low Onset Voltage Low Voltage Metal Electrode Mems Microphone Novel Device Recess Depth Storage Temperature Si-Based Saturated Output Power Sic Power Devices Piezoelectric Power Generator Power Gan Vth Shift Zero-Voltage Switching Switching Power Treatment Effects Theoretical Analysis Short Distance Thin Structure Technology Foresight System Architecture Switching Conditions Neuromorphic Hardware Source Region Back Grinding Blocking Voltage Capacitive-Type Cmos Process Deep Reactive Ion Etching Doping Profile Doping Method Drain Voltage Gate-Recessed Region High Electric Field High Power Density High Resistivity Si Substrate Ions Incorporation Lift-Off Process Low-Temperature Annealing Low Switching Minimum Noise Figure Memristor Device 48 V Reliability Testing Ring Structure Sapphire Substrates System Size Package Substrate P-Type Gan 3 V 16 Nm Standard Cmos Thick Photoresist