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Schottky Barrier Diode(SBD) Breakdown Voltage Normally-Off Field Effect Transistor(FET) Algan/Gan-On-Si High-Electron Mobility Transistor(HEMT) Field Plate Sacrificial Layer Switching Devices Gan-Based Reverse Leakage Current Acoustic Sensor Data Center Dc-Dc Converters X-Ray In-Line Inspection 2 Mm Acoustic Device Micro-Electro-Mechanical System(MEMS) Inspection Equipment High Thermal Conductivity Threshold Voltage(Vth) Forward Current It-Based Noise Level Power Electronics Enhancement Mode(E-mode) Semiconductor Technology Silicon Carbide(3C-SiC) Bottom Electrode High-Productivity Electrical Characteristics Recessed Gate Secondary Ion Mass Spectrometry Fluorine Ions Energy Saving Si Cmos Large-Scale Electric Bike Next-Generation Support Project Energy-Efficient High Switching Speed Key Components IEEE 802 High Power Applications Zinc Oxide(ZnO) Conversion Systems Gan On Sic Depletion-Mode Compound Semiconductor Ltcc Substrate Switching Loss Power System Si Wafer Algan/Gan 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Conditions Low-Temperature Annealing Multifunctional Sensors Power Semiconductor Devices Wide Band Gap 16 Nm Acoustic Pressure Basic Research Gan Hfets Ict Convergence Material Properties Oxide Etch Doping Profile Gan Buffer Plasma Damage High-Speed Switching Heat Control Harsh Environment Metal Plate Structural Changes Smd Package 3 V 20 Nm Gan Device Load Impedance Pinch-Off Read-Out Resistance Matching Technology Cad Sic Power Devices Stand-Alone Package Substrate Growth Analysis Bias Circuit Inverter Topology Isolation Region Multi-Frequency Matching Circuit Open-Circuit Polymer Waveguide Topology Design Thermally Annealing Capacitive Mems Cmp Process Device Size Input Voltage Micromachining Process Device Performance Non-Recessed Current Collapse Drain Leakage Current Treatment Effects Al Film Back Grinding Bulk Micromachining Membrane Diameter Specific On-Resistance Gate Voltage Reliability Testing Working Temperature Switching Power Sensor Material High Temperature Storage Press-Pack Source Region Size Reduction Schottky Barrier Height Cooling Needs Deep Reactive Ion Etching Gap Height Metal Ring Memristor Device Thermal Oxidation Gap Structures Metal Layer Planar Lightwave Circuit(PLC) Surge Current Set Up Avalanche Photo Diode(APD) Blocking Voltage Design Evaluation Gan-On-Si Hemts Low Leakage Current Stress-Free Low Loss As 2 Algan/Gan Mishemts Full-Load Gan Transistor Forward Voltage Gallium Nitride (Gan) Micro Devices I-V Measurement Key Technology Metal-Insulator-Semiconductor(MIS) Pfc Converter Small Form Factor Short Distance Ubiquitous Environment Low-Rate Material Analysis 900 V Through Silicon Vias(TSV) Fluoride Plasma Treatment Series Resistance Heat Transfer Heat Pipe Mass Spectrometry Analysis Semiconductor Package Surface Area 48 V Ground-Signal-Ground High Voltage Sintered Wick Si Surface Etching Thermal Treatments Afm Measurements Built-In Potential Forward And Reverse Ions Incorporation Reverse Bias Gate-Recessed Region Standard Cmos Heat Sink High Heat Flux High Electric Field Lift-Off Process Reverse Breakdown Stabilization Time Saturated Output Power Gate-To-Drain Spacing Thermal Conduction Buck Converter Disruptive Innovation Gas Plasma Instrumentation Amplifier Ohmic Metal High Resistivity Si Substrate Single-Mode Fiber(SMF) Ac Voltage Clean Air Device Structure Hard Switching Microwave Integrated Circuits(MICs) Plasma Dry Etching Promotion Strategy Metal Electrode Plasma Gas Gate Leakage Low Voltage High Gain Peak Electric Field Computational Performance High Current Low Onset Voltage Minimum Noise Figure Major Switching Rf Amplifier Design Rule Dynamic Ron Efficiency Improvement Fast Switching Speed N-Type Optical Axis Theoretical Analysis Sic Surface Cascode Gan Fet Need For Reverse Current Air-Gap Cmos Process Frequency Range Hybrid Electric Vehicle(HEV) Information And Communication Technologies(ICTs) Third-Order Intercept Point Vibration Exciter Atomic Layer Deposition Circular-Type Dopant Activation Drain Voltage Carbon Black Fabrication Tolerance Mechanical Vibration Single-Input Synchronous Buck Activation Ratio Bipolar Junction Transistor(BJT) Critical Inductance Front Side Gap Cavity Passive Alignment P-Type Gan Thermal Characteristics Power Gan Thick Photoresist Bridge Structure Edge Contact High Power Conversion Efficiency Polymer-Based Thermal Vias Mems Devices Poly-Silicon Thin Structure Temperature Humidity Bias(THB) Si Mems Capacitive-Type MOS-HEMT Neuromorphic Hardware Platform-Based E-Health Gate Electrode Led Lighting Maximum Output Power Optical Fibers Switching Condition Electric Vehicles(EV) Field Metal High-Efficiency Converter Optimal Condition Signal Line Solar Cells 700 V Au Nanoparticles(Au-NPs) Gan Capping High Power Density Water Pressure Via-Hole Energy Loss Frequency Response In-Situ Low-Power Operation Soft Switching System Size Multi-Layer Substrate Silicon Membrane Bonding Wires Capping Layer Process Technology Etching Conditions Microwave Monolithic Integrated Circuits(MMIC) Storage Temperature Schottky Contacts Gate Fabrication Ultra-Thin High Switching Frequency Off-State Stress Si-Based Sandwich Structure Battery Voltage Computing Technology Electronic Nose System Gate Oxide Vibration Environment Zero Voltage Switching(ZVS) 25 Years Doping Method Electroplated Cu Initialization Vector(IV) Power Electronic Applications Treatment Process Sapphire Substrates Design And Analysis Drop-Coating First Stage Small Devices Anode Structure Continuous Wave(CW) DC-AC High-Efficiency Operation Rf Power Dissipation Method Lateral Misalignment Metal Oxide Semiconductor Vth Shift Trade-Off Al Concentration Electrical Signal Low Switching Low Parasitic Inductance Storage Life Vacuum Pump Thermal Stress Gan Diode Novel Device Power Switching Device Reverse Voltage Subthreshold Slope(SS) Axis Alignment Control Circuit Multilayer Circuit Pulse Current System Architecture Variable Lateral Doping Silicon Substrate Spad Array Cascode Structure Polymer Composites Heat Dissipation Rate Fabrication Method Mesa Etching Mems Microphone Piezoelectric Power Generator Recess Depth Reverse Recovery Time