ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Schottky Barrier Diode(SBD) Microwave Integrated Circuits(MICs) Cut-Off Frequency Normally-Off T-Gate Microwave Monolithic Integrated Circuits(MMIC) Field Plate Recessed Gate Pseudomorphic High Electron Mobility Transistor(pHEMT) Comparative Study Gan Fet Microwave Characteristics Power Amplifiers(PAs) Frequency Range Algan/Gan-On-Si Schottky Contacts Maximum Oscillation Frequency Rf Performance Threshold Voltage(Vth) Drain Current Algaas/Ingaas/Gaas Phemts Silicon Carbide(3C-SiC) Small Signal Gain Compound Semiconductor Gan-Based Plasma-Enhanced Chemical Vapor Deposition (Pecvd) Inductively Coupled Plasma-Reactive Ion Etching(ICP-RIE) Material Properties Switching Devices 5 Ghz Current Density Maximum Frequency Power Switching High Performance Low Temperature Cofired Ceramics(LTCC) Silicon Nitride Saturated Output Power Gate Length Enhancement Mode(E-mode) Gan Power Device Ohmic Contact 2.4 Ghz Third-Order Intercept Point Rf Characteristics Data Center Millimetre-Wave Energy Loss Transmission Line Process Technology Continuous Wave(CW) Rf Power Electrical Characteristics Current Status Parasitic Inductance Power Semiconductor Devices Sic Substrate Electrical Characterization Gate Leakage Current Ghz Band High-Speed Switching Harsh Environment Gan Device Pinch-Off 220 Ghz Wireless Communication Systems Growth Analysis Bias Circuit Coplanar Waveguide Feeding(CPW) Material Technology Nitride Layer Device Performance Frequency Band Power Consumption Passivation Layer 4h-Sic Current Collapse 5.8 Ghz Ltcc Technology Specific On-Resistance S-Band High Breakdown Field Blocking Voltage Low Leakage Current Low Loss Input Return Loss Gan Transistor Wireless Transceiver Module Metal-Insulator-Semiconductor(MIS) And Gate High Frequency(HF) High Thermal Conductivity Ribbon Wire Device Characteristics Gate Shape Infrastructure Support Merged Pin Schottky Diode Molecular Beam Epitaxy(MBE) Forward Current Voltage Characteristics Wire-Bonding Technique Sin X Power Electronics Simulation Results Low Voltage Major Switching Semiconductor Technology Thz Imaging System Control Range Information And Communication Technologies(ICTs) Si-Doped Low Turn-On Voltage Parasitic Capacitance Fluorine Ions Critical Inductance Packaging Material Wireless Personal Area Network(WPAN) Gan Hemt Technology Gate Electrode Energy-Efficient Key Components Guard Ring Transmission Loss Bonding Wires High Power Applications Gan On Sic P-N Junction 60 Ghz Wireless Communication Pre-Passivation 6 Ghz Coupled Microstrip Line Depletion-Mode Core Material Switching Loss High-Efficiency Operation Measurement Results Supply Voltage Plasma-Induced Damage Head Size Small Power Gate Bias Dc Power Barrier Height Inhomogeneity Etching Process Recess Depth 7 Mm Electroplated Cu Gan-On-Diamond Initialization Vector(IV) Mmw Band Power Electronic Applications Schottky Junction Sige Bicmos Technology Sapphire Substrates Treatment Process First Stage Ltcc Substrate Small Devices Switching Time Branch-Line Coupler DC-AC Epitaxy Growth High Temperature Characterization High-Voltage And High-Power Dissipation Method Inductively Coupled Plasma Etch Power System Vth Shift Trade-Off Si Wafer Scaling Effect Frame Transfer(FT) Single Supply Interface Barrier Rapid Development Thermal Stress Gan Diode Gate Width Millimeter-Wave Band Novel Device Subthreshold Slope(SS) Cavity Resonance Channel Layer Flexible Substrate High-Rate Reverse Leakage Current Reference Surface Cascode Structure Operating Frequency Antenna Structure Fabrication Method Ion Implantation Mesa Etching Wet Etching Linear Trend Mim Capacitor Platform Development Wireless Local Area Network(WLAN) Solar Cells Band Bending Design And Implementation Gan Capping Side-Wall Water Pressure Via-Hole High Switching Speed Anisotropic Etching Fe-Doped Gallium Oxide Low-Power Operation Plasma Ashing System Size Concentration Ratio Capping Layer Components Technology Patch Resonator Self-Heating Effect(SHE) Uv Nanoimprint Lithography(UV-NIL) T-Shaped Gate Amplifier Design Bulk Crystal Growth Direct Patterning Energy Market Interface States Parasitic Element Resonance Method Turn-Off Conversion Loss Flexible Display Practical Use Gate Fabrication X-Ray Photoelectron Spectroscopy Improved Stability On-Wafer Renewable Energy Si-Based C-Band Ceramic Technology Development Of System Etched Surface Gate Oxide Junction Temperature Low Noise Amplifier (Lna) Repeated Measurements Sheet Resistance Voltage Standing Wave Ratio 25 Years Electronic Devices Plate Structure Thick Films Switching Performance Cap Layer Interface State Density(Dit) Light Source Two-Step Secondary Ion Mass Spectrometry Etching Method Gain Compression Power Loop System-On-Package Active And Passive P-Type Gan Residual Layer Thermal Characteristics National Defense Power Gan 2d Simulation X-Band Applications Thick Photoresist Stable Structure Atomic Composition Electrical Measurements Edge Contact High Power Conversion Efficiency High Temperature Operation I-V Characterization Mmic Power Amplifier N-Type Doping Potential Gradient Radar Image Unit Cell Three Dimensional(3D) 100 W-Class Cross-Sectional Area(CSA) Device Simulation Heat Flux Solid State Power Amplifier Semiconductor Process Trend Of Increasing 60 Ghz Applications 18 Ghz Double Plasma MOS-HEMT Optical Sensor Off-State Breakdown Platform-Based Applied Physics Auger Electron Spectroscopy Gallium Arsenide Maximum Output Power Uwb System Scattering Parameters(S-parameters) Efficiency And Power Gate-Recessed Region Package Technology Trap Effect Electrical Properties Heat Sink High Electric Field High Power Devices Lift-Off Process Post-Annealing Scattering Effect Gate-To-Drain Spacing Thermal Conduction Biosensor Fabrication Contact Resistivity F MAX Gas Plasma Schottky Interface High Resistivity Si Substrate Wilkinson Power Divider(WPD) Device Structure Plasma Dry Etching Semi-Insulating Gate Dielectric Metal Electrode Mole Fraction Output Voltage Power Hemt Plasma Gas Resistance Measurement Chemical Mechanical Polishing(CMP) E-Beam Lithography High Gain Ieee 802.11a Maximum Electric Field Thermal Process Bulk Growth Common-Source Critical Voltage Heat Dissipation Low Onset Voltage Minimum Noise Figure Rf Amplifier Substrate Surface Amplifier Circuit Figure Of Merit(FoM) Gaas Surface Oxide-Semiconductor Field-Effect Transistors Coupled Line Current Capacity Insertion Loss Time Interval Simulation And Measurement High Resolution Device Degradation Drain Voltage Single Power Supply Algan/Gan Mishemts Low Pressure Cost-Effective Conduction Band Offset Gallium Nitride (Gan) High-Quality Potential Barrier Experimental Measurement Key Technology Negative Feedback Pfc Converter Doping Concentration Material Analysis Temperature Range Pico-Cell 900 V Through Silicon Vias(TSV) Au-Free Communications Technologies Channel Width Temperature-Dependent Dielectric Materials Crossover Time Fluoride Plasma Treatment Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET) Numerical Simulation(Trnsys16) Ring Resonator Sub-60 Mv/Dec Voltage Shift Series Resistance Single-Ended Annealing Temperature Different Structures Dielectric Properties Heat Pipe Surface Area Drain Saturation Current Ground-Signal-Ground Higher Temperatures Low Thermal Conductivity Rf Isolation Sensor Device Sintered Wick Nano-Scale One Cycle Passive Terahertz Imaging Afm Measurements Forward And Reverse Ions Incorporation Intermediate Frequency Microwave Frequencies Plasma Process Reverse Bias 5 Nm Smart Data Defect Density 2 Mm Al Film Back Grinding Contact Degradation Feature Size Inp Hemt Image Sensor Local Oscillation Low Defect Main Patch Physical Mechanism Satellite Communication Etching Depth Gate Voltage Lithography Process Nitrogen Gas Pattern Depth Voltage Measurement Working Temperature Physical Properties Source Region Size Reduction Pseudomorphic Hemt Schottky Barrier Height Cooling Needs Deep Reactive Ion Etching Design And Fabrication Radio-Frequency Thermal Stability Time And Energy X-Ray Photoemission Spectroscopy(XPS) Thermal Oxidation Based System Metal Layer Ultra-Wideband System Surge Current Wlan Applications Set Up Current-Voltage (I-V) Characteristics Dc-Dc Gan-On-Si Hemts Hot Electrons Power Conversion Modules Power Transistors Stress-Free Operation Test 17 Ghz As 2 Electrical Module Output Power Density Packaging Technology Surface Wave Richardson Constant Subthreshold Swing(SS) Fabrication Technology Metal-Semiconductor Field-Effect Transistor O 3 P-Doping Surface Passivation Smart Lighting Transistor Devices Chip Package Light Emitting Diodes(LED) Laser System Organic Light Emitting Diode(OLED) Potential Distribution Wide Bandgap Semiconductor Au Contacts Display Device High Linearity Ideality Factor Normally-On Wet And Dry Etching Two-Stage Antenna Gain Gan Buffer Oxide Thickness Plasma Damage Region Area Temperature Dependence Memory Structure Theoretical Value Structural Changes 20 Nm Surface Layer IMT-2000 Network Applications Sic Power Devices Exponential Increase Package Substrate Design Techniques Isolation Region Matching Circuit Low Work Function Mis Schottky Diode Small-Sized Buffer Layer High Power Amplifier Input Voltage Plasma-Enhanced Atomic Layer Deposition Radar System System Testing Gaussian Distribution High Breakdown Voltage Increasing Temperature Non-Recessed Testing Technology Ion Bombardment Magnetic Memory Passive Components