ETRI-Knowledge Sharing Plaform

Breakdown Voltage(BDV) Compound Semiconductor Algan/Gan Hemts Cutoff Frequency Normally-Off Schottky Barrier Diode(SBD) Microwave Integrated Circuit Microwave Monolithic Integrated Circuits(MMIC) T-Gate Recessed Gate Pseudomorphic High Electron Mobility Transistor(pHEMT) Field Plate Comparative Study Algan/Gan-On-Si Components Technology Microwave Characteristics Gan Fet Frequency Range Small Signal Gain Silicon Carbide(3C-SiC) Drain Current Threshold Voltage(Vth) Schottky Contacts Rf Performance Algaas/Ingaas/Gaas Phemts Maximum Oscillation Frequency Power Amplifiers(PAs) Energy Loss Plasma-Enhanced Chemical Vapor Deposition (Pecvd) Third-Order Intercept Point Transmission Line Ohmic Contact High Performance Rf Characteristics Power Switching Low Temperature Cofired Ceramic(LTCC) Gan Power Device National Defense Continuous Wave(CW) Rf Power Platform Development Material Properties Gate Length Current Density Electrical Characteristics Maximum Frequency Switching Device Silicon Nitride Saturated Output Power 2.4 Ghz Enhancement-Mode Millimetre-Wave Gate Electrode Measurement Results Input Return Loss High-Speed Switching Coupled Microstrip Line Major Switching Dc Power Parasitic Capacitance Low Leakage Current P-N Junction Power Consumption Pinch-Off Gan On Sic Gate Shape 4h-Sic Bias Circuit Depletion-Mode Electrical Characterization Gan Transistor 6 Ghz S-Band Coplanar Waveguide Feeding(CPW) Ghz Band Plasma-Induced Damage Gate Leakage Current Pre-Passivation Etching Process Harsh Environments Passivation Layer Smart Lighting Gan Hemt Technology And Gate Metal-Insulator-Semiconductor(MIS) Voltage Characteristics 220 Ghz High Breakdown Field Sensor Node Wireless Transceiver Module Packaging Material 60 Ghz Wireless Communication Transmission Loss Switching Loss Wire-Bonding Technique Head Size Current Status 7 Mm High Thermal Conductivity Bonding Wires 5.8 Ghz Gan Device Gate Bias Fluorine Ions Guard Ring Sin X Device Characteristics Ltcc Technology Information And Communications Technologies(ICTs) Light Sources Device Performance Gan-Based Wireless Personal Area Network(WPAN) Optical Communications High-Efficiency Operation Process Technology Critical Inductance Nitride Layer High Power Applications Sic Substrate Ribbon Wire Parasitic Inductance Low Voltage Recess Depth Merged Pin Schottky Diode Power Electronics Current Collapse Thz Imaging System Wireless Communication System High Frequency(HF) 5 Ghz Blocking Voltage Control Range Supply Voltage Simulation Results Low Loss Frequency Band System Size Package Substrate Small-Sized 2d Simulation Thick Photoresist Ieee 802.11a Source Region Communications Technology P-Type Gan High-Temperature Operation Doping Concentration Back Grinding Dielectric Materials Self-Heating Effect(SHE) Transistor Devices Schottky Interface Anisotropic Etching Input Voltage Linear Trend Output Power Density Region Area Au-Free C-Band X-Band Applications Sic Power Devices Power Gan Novel Device Low Noise Amplifier (Lna) Gas Plasma Antenna Gain Scaling Effect Channel Width 2 Mm Potential Barrier Turn-Off 60 Ghz Applications Biosensor Fabrication Fluoride Plasma Treatment Wide Bandgap Semiconductor Pattern Depth High Power Devices Metal Electrode Structural Changes Single Supply Edge Contact Common-Source Local Oscillation Trap Effect Packaging Technology Coupled Line Lift-Off Process 17 Ghz Flexible Substrate High Electric Field Mmw Band Sapphire Substrates Low Turn-On Voltage Laser System Ions Incorporation Different Structures Gate-Recessed Region Crossover Time Amplifier Circuit Lithography Process Normally-On Feature Size Au Contacts High Resistivity Si Substrate Drain Voltage Minimum Noise Figure Output Voltage Deep Reactive Ion Etching Nano-Scale Maximum Electric Field Low Pressure Operation Test Intermediate Frequency Gate Oxide Ring Resonator Passive Components Matching Circuit Maximum Output Power Solar Cells Semiconductor Process Off-State Breakdown Concentration Ratio High Power Conversion Efficiency Metal-Semiconductor Field-Effect Transistor Pseudomorphic Hemt Specific On-Resistance Mesa Etching ICP-RIE 18 Ghz Small Devices Reverse Bias Conduction Band Offset Inp Hemt Microwave Frequencies Main Patch High Linearity Oxide Layer Power System Power Electronic Applications P-Doping Sheet Resistance Plasma Damage Potential Distribution Wlan Applications Millimeter-Wave Band Parasitic Element Cap Layer Device Simulation Contact Degradation Plasma Gas Package Technology Residual Layer Double Plasma Vth Shift Efficiency And Power On-Wafer Gate-To-Drain Spacing Si-Based Low Onset Voltage Voltage Shift Communication Technologies Dissipation Method Buffer Layer Antenna Structure Ltcc Substrate Secondary Ion Mass Spectrometry Material Analysis Auger Electron Spectroscopy Thermal Oxidation Plasma Process Via-Hole Rapid Development Semi-Insulating Si-Doped Stress-Free As 2 Gaas Surface Gate Voltage Oxide-Semiconductor Field-Effect Transistors Ion Implantation Practical Use Thermal Characteristics Wet Etching Surface Passivation Design Techniques Bulk Crystal Growth Operating Frequency Fabrication Method Non-Recessed Design And Implementation F Max Negative Feedback E-Beam Lithography Key Technology Representative Models Plasma-Enhanced Atomic Layer Deposition Channel Layer Power Transistor Thick Films Critical Voltage Low-Power Operation Al Film Side-Wall Radar System Power Semiconductor Devices Pfc Converter Gan-On-Diamond Gan Capping Mim Capacitor Scattering Parameters(S-parameters) 20 Nm Physical Properties Contact Resistivity Post-Annealing Reference Surface Direct Patterning Sige Bicmos Technology Radar Image Optical Sensor Gate Dielectric Nitrogen Gas First Stage Isolation Region High Temperature Characterization Thermal Stability(TGA) Cooling Needs Applied Physics High-Resolution Gan-On-Si Hemts Ceramic Technology Thermal Stress Insertion Loss T-Shaped Gate Experimental Measurements Surface Area Subthreshold Slope(SS) Plasma Ashing Through Silicon Vias(TSV) Three Dimensional(3D) Cross-Sectional Area(CSA) One Cycle Mole Fraction 900 V Size Reduction Wireless Local Area Networks(WLANs) Plasma Dry Etching Memory Structure Organic Light-Emitting Diodes(OLEDS) N-Type Doping Amplifier Design Gallium Oxide Wet And Dry Etching Ultralow Power(ULP) High-Voltage And High-Power Etching Depth Based System Unit Cell Time And Energy Gallium Nitride (Gan) High Switching Speed Forward And Reverse Stable Structure Bulk Growth UV-NIL Algan/Gan Mishemts Dielectric Properties Sensor Device Gan Diode Fabrication Technology Chemical Mechanical Polishing(CMP) Metal Layer Si Wafer Band Bending Electrical Measurements Surge Current Gate Width Two-Step Simulation And Measurement Annealing Temperature Set Up Interface Barrier Mmic Power Amplifier System-On-Package Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET) Patch Resonator Gate Fabrication Series Resistance Surface Wave Forward Current Wilkinson Power Divider Improved Stability Renewable Energy(RE) Branch-Line Coupler Voltage Standing Wave Ratio(VSWR) Single-Ended Capping Layer Mis Schottky Diodes Junction Temperature Conversion Loss Cavity Resonance Ultra-Wideband System Passive Terahertz Imaging Schottky Junction Active And Passive Heat Pipe Dc-Dc Switching Time X-Ray Photoemission Spectroscopy Power Conversion Modules Substrate Surface Electronic Devices Gallium Arsenide(GaAs) Network Applications Energy Market Sintered Wick Rf Amplifier Fe-Doped Potential Gradient Cost-Effective Single Power Supply Numerical Simulations Trade-Off Cascode Structure 5 Nm Inductively Coupled Plasma Etch Heat Flux 25 Years Atomic Composition Gain Compression Working Temperature Electrical Properties(I-V curve) Water Pressure Electroplated Cu High Gain Physical Mechanism Current Capacity Hot Electrons Power Loop 100 W-Class Afm Measurement Device Degradation Device Structure DC-AC Resonance Method Radio Frequency(RF) MOS-HEMT Design And Fabrication O 3 Solid State Power Amplifier Thermal Conduction Heat Sink Heat Dissipation Trend Of Increasing Magnetic Memory Resistance Measurement Platform-Based Gan Buffer Power Hemt Etching Method Molecular Beam Epitaxy(MBE) Rf Isolation Uwb System Ground-Signal-Ground Surface Layer Switching Performance Treatment Process Chip Package High Rate Drain Saturation Current Epitaxy Growth X-Ray Photoelectron Spectroscopy Reverse Leakage Current Asynchronous Processor Two-Stage