ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Gan-Based Gate Length Power Amplifiers(PAs) Maximum Oscillation Frequency T-Gate Device Performance Pseudomorphic High Electron Mobility Transistor(pHEMT) T-Shaped Gate Sic Substrate Gate Width Radiation Hardness Gate Recess 5 Nm Passivation Layer Metal-Insulator-Semiconductor(MIS) Normally-Off Radar System Gate Insulator Device Characteristics High Performance Electrical Properties Enhancement Mode(E-mode) Drain Voltage Dc Characteristics Rf Characteristics Small Signal Gain Carrier Mobility Maximum Output Power Via-Hole Microwave Monolithic Integrated Circuits(MMIC) Head Size Recessed Gate Microwave Characteristics Proton Radiation Dielectric Layer 94 Ghz And Gate Silicon Nitride Microwave Integrated Circuits(MICs) 9.5 GHZ Field Plate Sige Bicmos Threshold Voltage Shift Power Gain Sapphire Substrates Algan/Gan Heterostructure Electrical Characterization Nitride Layer Surface Treatments Output Power Density Gate Resistance Comparative Study Thin Film Resistor Low Temperature Cofired Ceramics(LTCC) High Efficiency Gate Dielectric Gan Semiconductor Equivalent Circuit Model Algaas/Ingaas/Gaas Phemts Parasitic Capacitance X-Band Applications Next-Generation Components Technology Hexagonal Boron Nitride(hBN) 6 Ghz Compound Semiconductor Input Reflection Coefficient Rf Applications Silicon Substrate Electrical Characteristics Plasma-Enhanced Chemical Vapor Deposition (Pecvd) Epitaxial Layer 7 Mm Stress Measurement Proton Irradiation Temperature Dependence 3 V 20 Nm Mechanical Stress Wireless Communication Systems Unconditional Stability S-Band Gate Voltage Microstrip Line Design And Fabrication Atomic Force Microscope(AFM) Thermal Behavior Maximum Frequency Schottky Barrier Diode(SBD) Temperature-Dependent Gate Bias Stress Power Amplifier Mmic Power Added Efficiency(PAE) E-Beam Lithography Gan-On-Sic Hemt 30 Ghz 2.4 Ghz Device Degradation Two-Step Wireless Personal Area Network(WPAN) Power Gan Mmic Power Amplifier Performance Degradation Gan Hemt Technology Scattering Parameters(S-parameters) Gan Hemt Devices Key Components Fabrication Process Etching Conditions Schottky Contacts Sheet Resistance Depletion-Mode Bi-Layer Reactive Ion Etching Stage Structure Metal Contact Plasma-Induced Damage Wireless Systems Subthreshold Slope(SS) Wavelength Shift Metal Deposition Minimum Noise Figure Semiconductor Technology Diode Parameters Fiber Optic Thz Imaging System Insertion Loss Diode Ideality Factor Gan Surface Gas Sensor Light Source Gain Compression Mode Volume Pulsed Power Packaging Material Two-Dimensional Electron Gas(2DEG) Data Center Gas Mixtures Large-Scale Trapped Charge Semiconductor Materials Icp Etching 18 Ghz Nicr Thin Film Recess Gate Wireless Local Area Network(WLAN) Weapon System Center Frequency Energy-Efficient Millimetre-Wave Power Semiconductor Yield Enhancement Performance Improvement Hetero-Interface Process Technology Self-Heating Effect(SHE) High Power Applications Narrow-Band Filtering Transconductance (Gm) 60 Ghz Wireless Communication Displacement Damage Ceramic Technology Pre-Passivation Atomic Force Microscopy (Afm) Systematic Study Transfer Characteristics Direct Current(DC) Measurement Results Frame Transfer(FT) Gan Nanowire Gan Heterostructures Radiation Tolerance Three-Terminal Smart Lighting Total Ionizing Dose Effects Tm Mode Gate Leakage Current Ghz Band Sic Device Cvd Diamond Network Applications Pinch-Off 220 Ghz Coplanar Waveguide Feeding(CPW) Current Density Dc Measurements Filtering Function Gain Flatness Local Oscillation Microstrip Coupled Line Power Characteristics Radar Applications Device Properties Millimeter-Wave Wireless(MMW) Degradation Mechanism Etch Depth Input Return Loss Algan/Gan Mishemts Schottky Diode Performance And Reliability Wireless Transceiver Module Compressive Stress Insulating Layer Input/Output Matching Matching Network Transmission Electron Microscopy(TEM) Double-Deck Ribbon Wire Tensile Stress Rf Isolation Thermal Conductivity Sensor Device Gate Shape Infrastructure Support Tetramethylammonium Hydroxide Wire-Bonding Technique Sin X F MAX Current Status Fabrication Technology Frequency Characteristics O 3 Radiation Resistance Scanning Electron Microscopy(S.E.M.) Transistor Devices Lithography Technology Metal Diffusion Off Current Radiation Energy Current-Voltage Characteristics High Linearity Normally-On Two-Stage Wet And Dry Etching Data Transfer Energy-Dispersive X-Ray Spectroscopy Low Dielectric Constant Molybdenum-Copper Noise Modelling Operating Condition Oxygen Plasma Treatment Saturation Velocity Plasma Damage Carrier Concentration Field Concentration High-Frequency Power Amplifier Geometric Parameters Thermoelectric Device Stable Process Surface Layer Load Impedance Parallel Feedback System Cost Signal Modeling Sic Power Devices Sheet Thickness Electrical Devices Fluoride-Based Plasma Treatment Laser Lift-Off(LLO) Lossy Transmission Line Ohmic Behavior Plasma Etching Process S-Parameter Measurement 70 Ghz Atomic Layer Deposition Method Bias Circuit Design Techniques Transit Time Digital Circuit Driver Amplifier High Frequency Band Input Voltage Reflect Signal Short-Channel Effects Sin Deposition Ac Stress 60ghz Communication S 11 Gan Fet Hysteresis Phenomenon High Breakdown Voltage Radio Frequency (Rf) Performance Rf Properties Hydrogen Silsesquioxane(HSQ) Contact Interface CF 4 Different Temperatures Linear Energy Transfer(LET) Mobile System Unconditionally Stable(US) 5.8 Ghz 2 Mm Single Chip Contact Degradation Device Characterization Experimental Study Inp Hemt Low Energy Image Sensor S-Parameter Extraction Surface Roughness Specific On-Resistance Energy Barrier Linear Extrapolation Lithography Process Silicon Waveguide Air-Bridge Parasitic Components Schottky Barrier Height High Temperature Storage Silicon Heterojunction Energy Level Gan Epilayer Nanometer-Scale Surface Defects Temperature-Controlled Thermal Stability Mobile Devices 40 Nm 28 Ghz Carrier Transfer Microstrip Circulator Number Of Fingers Radio Frequency Applications Wlan Applications Metal Layer Dc-Dc Hot Electrons Storage Test Simplified Circuit Model Operation Test 17 Ghz As 2 Critical Defects Dangling Bonds Electronics And Optoelectronics High Voltage Operation Packaging Technology Thermal Expansion Coefficient(TEC) State Power 2d Material Single Power Supply Drain Electrode Global Standards Load-Pull Mobility Behavior Stress Conditions Transport Properties Gaas Mhemt Gallium Nitride (Gan) Model And Simulation Current Gain Cutoff Frequency Channel Waveguide Degradation Factor Dot Pattern I-V Measurement Direct Contact Fmcw Radar Ground Plane(GP) Low-Rate Multi-Layer Metal Polymeric Materials Transfer Rate Pico-Cell 5g Wireless Communication Down-Conversion Lattice Mismatch Ni-Based Rf Measurement Rf Signal Time Exponent Selective Area Signal Leakage Gan Films Threading Dislocation Density Surface Treatment Method 200 Ghz Top Electrode Single-Ended Device Isolation Reference Device Saturation Drain Current State-Of-The-Art Top Layer Native Oxide Layer Wafer-Scale Access Region Current-Voltage Measurements Drain Saturation Current Etch Profile Iii-Nitride Pulsed Mode Pull Test Insertion Layer Microelectronic Devices Passive Terahertz Imaging Shunt Feedback De-Embedding Intermediate Frequency Microwave Frequencies Open Stub Plasma Process Pulse Width Protection Layer Various Substrates Composite Metal Drain Bias Electric Field Heteroepitaxial Growth Physical Model High Power Devices Mm-Wave Applications Surface Morphology Wideband Operation Silicon Nanowires(SiNWs) Defect-Free Failure Analysis Noise Level Operating Frequency Range Ohmic Metal Surface Characteristics 5g System Gas Reduction Gate Foot Gan Power Device Global Optimization Contact Region Epitaxial Wafer Electron Trapping Output Voltage Power Hemt Resistance Measurement X-Ray Photoelectron Spectroscopy (Xps) Digital Etch Design Guidelines High Gain Satellite Communication System Inductively Coupled Plasma Etching Impedance Match Model Parameter Mobile Handset Off-State Leakage Raman Spectroscopy Radio Over Fiber(RoF) Van Der Waals Interaction S 22 Performance Deterioration X-Band Radar Amplifier Circuit Etching Technique High Isolation Mobility Degradation Temperature Profile Device Fabrication Device Processing Interface Quality On-Chip Power Losses Wet Chemical Etching Aln Substrate Coulomb Scattering Layer Thickness Process Technique Simulation And Measurement High Resolution Algan/Gan-On-Si Actual Operation Diamond Substrate Low Annealing Temperature Radiation Effects Silicon Carbide(3C-SiC) Vt Shift Thermal Performance Semiconductor Heterostructure State Performance Metal Interface Aesa Radar Co-Firing Etching Method Fluorine Ions Practical Implementation Recess Etch Sin Passivation Van Der Waals Heterostructure Wide Temperature Range Transmission Line Model 5g Networks Active And Passive Capacitive Coupling Front Side High Resistance Key Device Measurement Data Si Substrate Thickness Variation Specific Contact Resistance Schottky Layer Ghz Range Yttrium Iron Garnet Heterostructure Field Effect Transistors Noise Performance National Defense Stable Structure Cu Film Dc Current Electrical Measurements High Temperature Operation Unit Cell Silicon On Insulator(SOI) Silicon Ring Resonator Cross-Sectional Area(CSA) Cpw Line Low Loss Tangent Residual Stress Cleaning Process Double Plasma Dc Performance Gan Power Amplifier Trap Sites Te Mode Stress Dependent Applied Physics Auger Electron Spectroscopy High Power Performance Gate Electrode Planar-Gate Active Region High Frequency Operation Platform Development Via Etch Signal Line Dual Gate(DG) Design And Implementation Gan Capping Higher Frequency High Power Density Quaternary Alloy Theoretical Calculation Stress Engineering Side-Wall Anisotropic Etching Dc And Rf Performance Plasma Ashing Transport Characteristics Conversion Gain Control Gate Capping Layer Channel Length Duty Cycle(DC) Improved Performance Ka-Band Spectroscopic Analyses Amplifier Design Noise Characteristic Network Analyzer(NA) Temperature Effect Conversion Loss Process Conditions Shift Mechanism Stability Parameter Charge Trapping High-Frequency Applications On-Wafer Si-Based 11 Ghz Cascode Mixer Green Sheet Junction Temperature Low Noise Amplifier (Lna) Lumped Elements Mass Production Rapid Thermal Annealing(RTA) Voltage Standing Wave Ratio Deterioration Mechanism Etch Rates Initialization Vector(IV) Ohmic Contact Resistance Parallel-Plate High Output Power Treatment Process Capacitance-Voltage Diode Characteristics Floating Gate First Stage Ltcc Substrate Quality Improvement Small-Signal Model Surface Charge Continuous Wave(CW) DC-AC Etch Selectivity Interface Trap Rf Power Extrinsic Gate Capacitance Charging Time Single Supply Atomic Force Microcopy C-Plane Sapphire Substrate Charging Effects Circuit Complexity Etching Rate Frequency Properties Production Technology Technical Development Cascade Structure Size Dependence Single-Layer Substrate Effects Temperature-Insensitive Stability Improvement Contact Area Channel Layer Device Reliability Electron Beam Lithography High-Rate Metal-Semiconductor Interface Metalorganic Chemical Vapor Deposition Reference Surface Threading Dislocations(TDs) 55 Ghz Atomically Thin Contact Reliability Carrier Transport Metal Stacking Property Improvement 110 Ghz Show Through Fabrication Method Ion Implantation Metal-Insulator-Metal (Mim) Capacitor Recess Depth Source Degeneration Wet Etching 5g Mobile