ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Gan-Based Gate Length Power Amplifiers(PAs) T-Gate Maximum Oscillation Frequency Device Performance Components Technology Pseudomorphic High Electron Mobility Transistor(pHEMT) Compound Semiconductor T-Shaped Gate Gate Recess Sic Substrate Gate Width 5 Nm Metal-Insulator-Semiconductor(MIS) Normally-Off Recessed Gate Via-Hole Head Size Device Characteristics Maximum Output Power Gate Insulator Carrier Mobility Drain Voltage Electrical Properties(I-V curve) Microwave Characteristics Power Gain Threshold Voltage Shift High Performance Electrical Characterization Rf Characteristics Small Signal Gain Proton Radiation Passivation Layer Radar System 94 Ghz Microwave Monolithic Integrated Circuits(MMIC) Sige Bicmos Algan/Gan Heterostructure Field Plate Silicon Nitride Sapphire Substrates Dielectric Layer Radiation Hardness Next-Generation Surface Treatments 6 Ghz Low Temperature Cofired Ceramic(LTCC) Gate Dielectric Dc Characteristics And Gate Microwave Integrated Circuit Algaas/Ingaas/Gaas Phemts Comparative Study Nitride Layer Output Power Density X-Band Applications 9.5 GHZ Enhancement-Mode Temperature Dependence Power Amplifier Mmic Input Reflection Coefficient Proton Irradiation Maximum Frequency Wireless Communication System 2.4 Ghz 3 V Schottky Barrier Diode(SBD) Plasma-Enhanced Chemical Vapor Deposition (Pecvd) Stress Measurement Device Degradation Design And Fabrication 30 Ghz Power Added Efficiency(PAE) Unconditional Stability Two-Step Gate Bias Stress Mmic Power Amplifier Depletion-Mode S-Band Gan Hemt Devices Microstrip Line National Defense Smart Lighting Fabrication Process Gan Hemt Technology Etching Conditions Sensor Node Platform Development Bi-Layer Gate Voltage 7 Mm Schottky Contacts E-Beam Lithography Scattering Parameters(S-parameters) Light Sources 20 Nm Performance Degradation Wireless Personal Area Network(WPAN) Optical Communications Gan-On-Sic Hemt Epitaxial Layer Mechanical Stress Sheet Resistance Thermal Behavior Atomic Force Microscope(AFM) Temperature-Dependent Gate Resistance Thin Film Resistor Hexagonal Boron Nitride(h-BN) Gan Heterostructures Minimum Noise Figure Two-Dimensional Electron Gas(2DEG) Self-Heating Effect(SHE) Nicr Thin Film Performance And Reliability Transconductance (Gm) Algan/Gan Mishemts Wireless Transceiver Module Packaging Material 60 Ghz Wireless Communication Filtering Function Icp Etching Sensor Device Compressive Stress Narrow-Band Filtering Wire-Bonding Technique Gas Sensors Power Characteristics Yield Enhancement Double-Deck Large-Scale F Max Radiation Tolerance Recess Gate Sin X Systematic Study Device Properties Schottky Diode Rf Applications Silicon Substrate Millimeter-Wave Wireless(MMW) 18 Ghz Gate Capacitance Wireless System Current Density Radar Applications Wavelength Shift Total Ionizing Dose Effects Tensile Stress Electrical Characteristics Hetero-Interface Three-Terminal High Power Applications Fiber Optic Sic Device Reactive Ion Etching(RIE) Ribbon Wire Mode Volume Insulating Layer Tm Mode Pulsed Power Thermal Conductivity Displacement Damage Local Oscillation Center Frequency Thz Imaging System Gas Mixture Gan Surface Gain Compression Millimetre-Wave Measurement Results Input Return Loss Gain Flatness Transmission Electron Microscopy(TEM) Degradation Mechanism Matching Network Parasitic Capacitance Rf Isolation Pinch-Off Etch Depth Gate Shape Diode Ideality Factor Transfer Characteristics Metal Contact Coplanar Waveguide Feeding(CPW) Ghz Band Plasma-Induced Damage Dc Measurements Stage Structure Gate Leakage Current Network Applications Trapped Charge Tetramethylammonium Hydroxide Pre-Passivation Diode Parameters Metal Deposition Microstrip Coupled Line Ceramic Technology Insertion Loss Atomic Force Microscopy (Afm) Subthreshold Slope(SS) Gan Nanowire Wireless Local Area Networks(WLANs) Input/Output Matching Cvd Diamond 220 Ghz Equivalent Circuit Model(ECM) Zeta Potential(Surface charge) Algan/Gan-On-Si 40 Nm Rapid Thermal Annealing(RTA) Process Conditions Noise Characteristics High Output Power Nanometer-Scale Critical Defects Linear Energy Transfer Transport Characteristics Atomically Thin Lattice Mismatch X-Band Radar Practical Implementation High Gain Mobility Behavior Inductively Coupled Plasma Etching Ohmic Contact Resistance Hot Electrons Ground Planes(GP) Metal-Semiconductor Interface Size Dependence Heterostructure Field Effect Transistors Shunt Feedback On-Chip Gan Films DC-AC Pull Test Threading Dislocation Density 2d Material Oxygen Plasma Treatment Contact Interface O 3 70 Ghz Microelectronic Devices Satellite Communication System Hysteresis Phenomenon I-V Characteristic(Transport property) Diode Characteristics C-Plane Sapphire Substrate Green Sheet Resistance Measurement Etch Selectivity Silicon Ring Resonator Capacitive Coupling Data Transfer Coulomb Scattering Parasitic Components Power Hemt Etching Method Vt Shift Front Side Surface Layer Duty Cycle(DC) Silicon Nanowires(SiNWs) Control Gate Treatment Process High Rate Property Improvement Drain Saturation Current Carrier Transport Noise Performance Time Exponent Radio Frequency (Rf) Performance Asynchronous Processor Gaas Mhemt Contact Reliability Electrical Measurements Noise Level Reflect Signal Simulation And Measurement Model Parameter Low-Rate 55 Ghz Global Optimization Silicon Heterojunction Bias Circuit Different Temperatures Radiation Resistance Te Mode Etch Profile Voltage Standing Wave Ratio(VSWR) Network Analyzer Single-Ended X-Ray Photoelectron Spectroscopy (Xps) 5g Mobile Capping Layer Parallel-Plate Initialization Vector(IV) Driver Amplifier Epitaxial Wafer Junction Temperature Semiconductor Heterostructure Conversion Loss Passive Terahertz Imaging Gan Epilayer Threading Dislocations(TDs) Active And Passive Transmission Line Model Dc-Dc Open Stub S 22 Lumped Elements High Temperature Storage Device Processing Lithography Technology Gas Reduction Gate Foot Process Technique Drain Electrode Gan Power Device S-Parameter Extraction Single Power Supply Radio Frequency Applications Quality Improvement Rf Properties Etching Technique Silicon Waveguide Thermal Stability(TGA) Off-State Leakage Applied Physics High-Resolution Schottky Layer Thickness Variation Top Electrode Stress Dependent High Breakdown Voltage Energy Barrier Cleaning Process Drain Bias Scanning Electron Microscopy(S.E.M.) Measurement Data Plasma Ashing State-Of-The-Art Continuous Wave(CW) Simplified Circuit Model Etching Rate Cross-Sectional Area(CSA) Surface Morphology Diamond Substrate Floating Gate Quaternary Alloy Hydrogen Silsesquioxane Ni-Based Amplifier Design Energy Levels Mobile Devices Wet And Dry Etching Ultralow Power(ULP) Wafer-Scale Pulsed Mode 200 Ghz Raman Spectroscopy 110 Ghz Temperature Profile Carrier Concentration Rf Power Unit Cell Direct Contact Wide Temperature Range Van Der Waals Heterostructure Saturation Velocity Rf Measurement Yttrium Iron Garnet Current-Voltage Measurements Stable Structure Contact Area Electron Trapping Input And Output Metal Stacking Model And Simulation Carrier Transfer Single-Layer Electronics And Optoelectronics Mobility Degradation Ohmic Metal Fabrication Technology Active Region Atomic Layer Deposition Method Polymeric Materials Metal Layer Schottky Barrier Height High Frequency Operation Trap Sites Theoretical Calculation Ltcc Substrate Surface Treatment Method Saturation Drain Current Auger Electron Spectroscopy Dot Pattern Plasma Process Gan Power Amplifier I-V Measurement Surface Roughness De-Embedding Rf Signal Molybdenum-Copper Interface Quality Technical Development As 2 Selective Area Etch Rates Current Status Van Der Waals Interaction Ion Implantation Interface Trap Linear Extrapolation 5.8 Ghz Sin Passivation Wet Etching 5g Wireless Communication Design Techniques Signal Line Charging Time Failure Analysis(FA) Load-Pull Fabrication Method Fluorine Ions Co-Firing Design And Implementation Ka-Band Lossy Transmission Line Channel Layer 5g System Cascode Mixer Radiation Effects Side-Wall Key Device Gan Capping Digital Circuit Native Oxide Layer Sheet Thickness Reference Surface Metal Interface Energy Dispersive X-Ray Spectroscopy(EDX) Radio Over Fiber(ROF) Mobile Handset Operation Test Composite Metal Multi-Layer Metal Intermediate Frequency Fmcw Radar Residual Stress Spectroscopic Analyses Surface Defects Physical Model Insertion Layer Degradation Factor Surface Characteristics Wideband Operation Load Impedance Sin Deposition Specific On-Resistance Digital Etch State Power Reference Device High Voltage Operation Impedance Match Inp Hemt Ac Stress Microwave Frequencies High Linearity Low Loss Tangent Electron Beam Lithography Down-Conversion Cpw Line Iii-Nitrides Process Technology Mm-Wave Application Microstrip Circulator Thermal Performance Plasma Damage Dc Current Conversion Gain Top Layer Wlan Applications Capacitance-Voltage Direct Current(DC) Charge Trapping Silicon On Insulator(SOI) Device Characterization Contact Degradation Double Plasma Operating Conditions S-Parameter Measurement Via Etch 60ghz Communication On-Wafer Si-Based Shift Mechanism High Isolation Input Voltage State Performance Deterioration Mechanism Circuit Complexity Parallel Feedback Channel Waveguide Low Annealing Temperature Sic Power Devices Low Noise Amplifier (Lna) Power Losses Temperature-Insensitive Cu Film Specific Contact Resistance Thermal Expansion Coefficient(TEC) Device Reliability Off Current 2 Mm 5g Network Laser Lift-Off Experimental Study Plasma Etching Process Metal Diffusion Recess Depth Stress Conditions Mobile System Stable Process Atomic Force Microcopy Gan Fet Low Dielectric Constant Signal Modeling High Power Devices Single Chip Single Supply Low Energy Stress Engineering Access Region Packaging Technology Temperature-Controlled High-Frequency Applications 17 Ghz Global Standards Frequency Properties Recess Etch Actual Operation High Power Density Heteroepitaxial Growth High Frequency Band Layer Thickness Signal Leakage Electrical Devices Radiation Energy Fluoride-Based Plasma Treatment Charging Effects Amplifier Circuit Metal-Insulator-Metal (Mim) Capacitor Stability Improvement Contact Region Lithography Process Normally-On Unconditionally Stable CF 4 S 11 Various Substrates Stability Parameter Operating Frequency Range Device Isolation Dual Gate(DG) Transfer Rate Substrate Effects Ohmic Behavior Metalorganic Chemical Vapor Deposition Performance Deterioration Thermoelectric Device Output Voltage Temperature Effect System Cost Aln Substrate Channel Length Current Gain Cutoff Frequency Storage Test Wet Chemical Etching High-Temperature Operation Pulse Width Show Through Transistor Devices Current-Voltage Characteristics High Resistance 28 Ghz Improved Performance Dangling Bonds Defect-Free Air-Bridge Anisotropic Etching Si Substrate High Power Performance