ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Gan-Based Gate Length T-Shaped Gate Gate Recess Sic Substrate Maximum Oscillation Frequency Bipolar Transistors Microwave Monolithic Integrated Circuits(MMIC) Breakdown Voltage Compound Semiconductor Microwave Integrated Circuits(MICs) Process Technology Via-Hole Gate Width Device Performance Inp Hbt And Gate Rf Performance W Band Silicon Nitride Two-Step Rf Characteristics Metamorphic High Electron Mobility Transistor(mHEMT) Mim Capacitor 6 Ghz Low-Noise Amplifier(LNA) High Power Amplifier 28 Ghz Rf Components Dielectric Layer Base Station Electrical Properties Enhancement Mode(E-mode) Frequency Range Field Plate Dc Characteristics Self-Aligned Gan Hemt Devices Components Technology Fabrication Process Ka-Band Epitaxial Layer Surface Treatments Electrical Characterization Recess Depth Recessed Gate 3 V 60 Ghz Mechanical Stress Nitride Layer Atomic Force Microscope(AFM) Output Power Density Gallium Nitride (Gan) Transimpedance Amplifier(TIA) Inp-Based Double-Deck Device Characteristics 5 Nm Gate Dielectric Creative Technology Gan-On-Sic Hemt Minimum Noise Figure 30 Ghz Inp/Ingaas Heterojunction Dry Etching Small Signal Gain T-Gate Next-Generation Gan Hemt Technology Key Components 40 Gb/S Etching Conditions High Power Applications Schottky Contacts Bi-Layer Normally-Off Fabrication Method Gate Leakage Current Current Status Optical Link Smart Lighting Three-Terminal Sic Device Off-State Radar System Current Density Dc Measurements Passivation Layer 2 Mm Broadband Amplifier S-Band Optical Transmission 38 Ghz Microstrip Line Epitaxial Structure Proton Radiation 3.5 Ghz Etch Depth Wireless Communication Algan/Gan Mishemts Gaas Heterojunction Bipolar Transistor Schottky Diode Metal-Insulator-Semiconductor(MIS) Rf Measurement Gate Resistance High Performance Infrastructure Support Power Amplifier Mmic Gate Foot Gan Power Device Inductively Coupled Plasma(ICP) Semiconductor Technology Diode Parameters Citric Acid Ingap/Gaas Heterojunction 9.5 GHZ Drain Voltage Device Degradation Diode Ideality Factor Light Source Recess Etch Key Device Pulsed Power Data Center Gas Mixtures X-Band Applications Mmic Power Amplifier Performance Degradation Icp Etching 18 Ghz Carrier Mobility Threshold Voltage Shift Active Region Maximum Output Power Transmission System Power Gain Energy-Efficient Power Semiconductor Radiation Hardness Conversion Loss Output Matching Transconductance (Gm) Receiver Module Double Heterojunction Bipolar Transistor(DHBT) Sheet Resistance Atomic Force Microscopy (Afm) Depletion-Mode Etch Rates Ohmic Contact Resistance Transfer Characteristics Rf Power Ku-Band Metal Contact Thermal Stress Annealing Process Electron Beam Lithography Inp Heterojunction Bipolar Transistor Electrical Characteristics Mesa Etching Plasma-Enhanced Chemical Vapor Deposition(PECVD) Depth-Dependent On-Resistance Transport Mechanism Frame Transfer(FT) Si Wafer Scaling Effect Trade-Off Algan/Gan Heterostructure Etching Rate Technical Development Ramp-Up Manufacturing Processes Millimeter-Wave Band Subthreshold Slope(SS) Single-Layer Channel Layer Device Reliability Low Phase Noise Metal-Semiconductor Interface Oscillator Circuit Process Parameters Threading Dislocations(TDs) Carrier Transport Contact Reliability Inalas/Ingaas Mhemt Wet Etching Process 110 Ghz Ion Implantation Return Loss Platform Development Dual Gate(DG) High Power Density Gan Capping Water Pressure Stress Engineering Electrochemical Potential Gate Annealing High Reliability Low-Power Operation Ohmic Electrode Transport Characteristics Control Gate Capping Layer Conversion Gain Duty Cycle(DC) Output Characteristics Post Amplifier(PA) Packaging Processes Self-Heating Effect(SHE) Input-Output Inp Dhbt Limiting Amplifier(LA) Noise Characteristic Network Analyzer(NA) Temperature Effect Saturation Characteristics Flexible Display Gate Fabrication Process Conditions Wafer Level Package(WLP) Charge Trapping High-Frequency Applications On-Wafer Junction Temperature Lumped Elements Passivation Film Three-Layered Electroplated Cu Parallel-Plate High Output Power Treatment Process Systematic Study Capacitance-Voltage Diode Characteristics Floating Gate Ingaas Channel Voltage Stability Quality Improvement Surface Charge 39 Ghz Carrier Density Etch Selectivity Frequency Tuning Range Electron Beam Exposure Image Signal Interface Trap Oscillating Frequency Process Technique Simple And Reliable Simulation And Measurement Algan/Gan-On-Si Plate Structure Thermal Performance Semiconductor Heterostructure State Performance Metal Interface Measuring Channel Parasitic Capacitance Gan Surface Stress Effects Cross Section Gain Compression Power And Efficiency Characteristics Transmission Line Model 3-Db Bandwidth Wide Temperature Range Capacitive Coupling Front Side Measurement Data Resistive Mixer Schottky Layer Heterostructure Field Effect Transistors Noise Performance National Defense Thick Photoresist Trapped Charge Source And Drain Device Layout Electrical Measurements High Temperature Operation High Carrier Concentration Off-Chip Residual Stress Solid State Power Amplifier Semiconductor Process Cleaning Process Double Plasma Gan Power Amplifier High-Efficiency Power Amplifiers(PAs) Mesa Structure Platform-Based Stress Dependent Fiber-Optic Communications Gate Electrode Technology Infrastructure Scattering Parameters(S-parameters) Energy Band Gap High Frequency Operation Ohmic Contact Formation Output Power And Efficiency Via Etch De-Embedding Molecular Beam Epitaxy(MBE) Plasma Process Pulse Width Communication Services Drain Bias Heteroepitaxial Growth Inalas/Ingaas Hemt Lo Power Physical Model Tetramethylammonium Hydroxide Trap Effect Thermal Conduction Wideband Operation Defect-Free F MAX Failure Analysis Metal Deposition Noise Level Ohmic Metal Radio Frequency (Rf) Surface Characteristics Global Optimization Contact Region Image Rejection Mixer Output Voltage Power Hemt X-Ray Photoelectron Spectroscopy (Xps) Chemical Mechanical Polishing(CMP) Digital Etch E-Beam Lithography Measurements Results Nitride Passivation Thermal Process Wide Bandwidth Channel Current Electrochemical Reactions Model Parameter Research Institute Raman Spectroscopy Communication Infrastructure Etching Technique Optoelectronic Integrated Circuit 2.4 Ghz Spurious Suppression Device Fabrication Equivalent Circuit Model Electrode Process Ingap/Gaas Hbt Input Signal Interface Quality Wet Chemical Etching Coulomb Scattering Figures Of Merit Flip-Chip Bonding Layer Thickness Drain Electrode Load-Pull Optical Communication Systems Transport Properties Stress Conditions 94 Ghz Cost-Effective Frequency Efficiency Model And Simulation Maximum Frequency Performance And Reliability 72 Ghz Current Gain Cutoff Frequency Degradation Factor Technology Trends De-Multiplexer Doping Concentration Open Technology Through Silicon Vias(TSV) Dc Output Frequency Bandwidth Lattice Mismatch Ni-Based Temperature-Dependent Selective Area Gate Bias Stress Head Position Insulating Layer Transmission Electron Microscopy(TEM) Compressive Stress Top Electrode Threading Dislocation Density Surface Treatment Method 200 Ghz Single-Ended Band Power Comparative Study Different Structures Device Isolation Etching Solution Native Oxide Layer Tensile Stress Reference Device Saturation Drain Current Drain Saturation Current Etch Profile Frequency Multiplier High Voltage Indium Content Interfacial States Iii-Nitride Target Current Structural Parameters Pulsed Mode Electrical Analysis Fine Pitch Bump Insertion Layer Surface Mounting Carbon-Doped Positive Slope Current Collapse Common-Source Lna CF 4 Drain Leakage Current Gaas Process Input Matching Source Resistance Active Phased Array Antenna Back Grinding Contact Degradation Image Sensor Low Energy Surface Roughness S-Parameter Extraction Rf Front-End Key Process Device Properties Gate Voltage High-Frequency Performance Lithography Process Integrated Circuit Technology Air-Bridge High Temperature Storage Silicon Heterojunction Schottky Barrier Height Source Region Parasitic Components Wave Front Microwave Characteristics Deep Reactive Ion Etching Design And Fabrication Gan Epilayer Thermal Stability Temperature-Controlled Carrier Transfer Internal Source Metal Layer Degradation Mechanism Gaas Mmic Hot Electrons Operation Test Storage Test Stress-Free Simplified Circuit Model Gate Insulator Thermal Expansion Coefficient(TEC) Packaging Technology Critical Factors Frequency Characteristics Gan Hpa O 3 Transistor Devices Wire Bonding Intelligent Vehicle Lithography Technology Metal Diffusion Off Current Parasitic Coupling Wide Band Gap Bonding Process Current-Voltage Characteristics Compact Layout Etching Profile Display Device Material Properties Output Frequency Tuning Diode 5g Communication Eye Opening Ghz Band Molybdenum-Copper Operating Condition Oxygen Plasma Treatment Plasma Damage Temperature Dependence Voltage Swing Saturation Velocity Thermal Transport Large Signal Leakage Current Reduction Thermoelectric Device 20 Nm Stable Process Die-Attach Gan Device Pinch-Off Sic Power Devices Fully Integrated Fluoride-Based Plasma Treatment Lossy Transmission Line Negative Resistance 70 Ghz S-Parameter Measurement Atomic Layer Deposition Method Matching Circuit Non-Uniformity Service Market Buffer Layer Down Converter Millimeter-Wave Frequency 5g Mobile Communication Sin Deposition