ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Heterojunction Bipolar Transistors(HBTs) Compound Semiconductor Components Technology T-Shaped Gate Gate Recess Maximum Oscillation Frequency Via-Hole Sic Substrate Gan-Based Breakdown Voltage(BDV) W-Band X-Band Power Amplifiers(PAs) Gate Length Metamorphic High Electron Mobility Transistor(mHEMT) Fabrication Process Electrical Properties(I-V curve) Two-Step Silicon Nitride Mim Capacitor Inp Hbt Microwave Monolithic Integrated Circuits(MMIC) 60 Ghz Dry Etching Surface Treatments Rf Characteristics Inductively-Coupled Plasma(ICP) Dc Characteristics Self-Aligned Etching Conditions Rf Performance Microwave Integrated Circuit Field Plate Dielectric Layer 3 V 30 Ghz 40 Gb/S Next-Generation Diode Ideality Factor Recessed Gate Electrical Characterization 6 Ghz Gan Hemt Devices Output Power Gate Dielectric Etching Process National Defense Smart Lighting And Gate Transconductance (Gm) Platform Development Bi-Layer Normally-Off Low Noise Amplifier(LNA) Light Sources Device Performance Transimpedance Amplifier(TIA) Schottky Diode Gan-On-Sic Hemt Epitaxial Layer Mechanical Stress Gate Resistance Nitride Layer Inp/Ingaas Heterojunction Gas Mixture Minimum Noise Figure Enhancement-Mode Current Density Optical Transmission Sic Device Power Amplifier Mmic Double Heterojunction Bipolar Transistor(DHBT) Recess Depth Carrier Mobility Optical Link Dc Output Contact Region Radiation Hardness Front-Side Wet Chemical Etching 28 Ghz Device Degradation Oxygen Plasma Treatment Transmission System Creative Technology Etch Depth Gaas Heterojunction Bipolar Transistor Noise Level Mmic Power Amplifier Plasma-Enhanced Chemical Vapor Deposition(PECVD) Threshold Voltage Shift Transfer Characteristics Saturation Current Metal Contact Algan/Gan Mis-Hemt S-Band Depletion Mode Proton Radiation Gate Leakage Current Gate Foot Off-State Ingap/Gaas Heterojunction 5 Nm Citric Acid Gan Hemt Technology Rf Power Metal-Insulator-Semiconductor(MIS) Sensor Node Icp Etching Etch Rates Output Characteristics Wet Etching Double-Deck Schottky Contacts Ka-Band T-Gate Frequency Range Performance Degradation Broadband Amplifier 18 Ghz Atomic Force Microscope(AFM) Algan/Gan-On-Si Target Current Noise Characteristics Oscillator Circuit Gate Electrode Electrode Process Water Pressure De-Multiplexer Transport Characteristics Wafer Level Package Electroplated Cu Negative Resistance Post Amplifier(PA) Hot Electrons Metal-Semiconductor Interface Heterostructure Field Effect Transistors Electrochemical Reaction(ECR) Voltage Swing Frequency Tuning Range Millimeter Wave(mmWave) Design And Fabrication O 3 70 Ghz Thermal Conduction I-V Characteristic(Transport property) Transmission Electron Microscopy(TEM) Diode Characteristics Degradation Mechanism Etch Selectivity Platform-Based Capacitive Coupling Ohmic Contact Coulomb Scattering Parasitic Components Power Hemt Molecular Beam Epitaxy(MBE) Bonding Process Control Gate Treatment Process Ingap/Gaas Hbt Resistive Mixer On-Resistance Carrier Transport Noise Performance Asynchronous Processor Contact Reliability Electrical Measurements Oscillating Frequency Gate Bias Stress Gate Fabrication Temperature Range Silicon Heterojunction Wire Bonding Tuning Diode High Performance Etch Profile Single-Ended Nitride Passivation X-Ray Photoelectron Spectroscopy (Xps) Capping Layer Gaas Mmic Parallel-Plate Junction Temperature Semiconductor Heterostructure Conversion Loss Small Signal Gain Gan Epilayer Transmission Line Model Lumped Elements High Temperature Storage Flip-Chip Bonding Trapped Charge Process Technique Drain Electrode Gan Power Device Quality Improvement Tetramethylammonium Hydroxide Etching Technique Diode Parameters Thermal Stability(TGA) Metal Deposition Microstrip Line Top Electrode Device Layout Thermal Stress Passivation Layer Atomic Force Microscopy (Afm) Subthreshold Slope(SS) Cleaning Process Mesa Structure Through Silicon Vias(TSV) Simplified Circuit Model Technology Infrastructure Etching Rate Floating Gate Three-Layered Ultralow Power(ULP) Pulsed Mode 110 Ghz Carrier Concentration Fine Pitch Bump Equivalent Circuit Model(ECM) 39 Ghz Image Rejection Mixer Infrastructure Support Input And Output Carrier Transfer Single-Layer Etching Solution Device Fabrication Active Region Atomic Layer Deposition Method Chemical Mechanical Polishing(CMP) Input Signal Metal Layer Si Wafer Compressive Stress Buffer Layer Non-Uniformity Surface Treatment Method Saturation Drain Current Gaas Process Plasma Process Gan Power Amplifier Interface Quality Technical Development Stress-Free Selective Area Gate Voltage Current Status Gan Device Failure Analysis(FA) F Max Lossy Transmission Line Carbon-Doped Device Characteristics Channel Layer Device Properties Optical Communication Systems Low-Power Operation Open Technology Key Device Radar System Gan Capping Native Oxide Layer Passivation Film 20 Nm Metal Interface Limiting Amplifier 94 Ghz Operation Test Physical Model Insertion Layer Degradation Factor Semiconductor Process Surface Characteristics Wideband Operation Frequency Characteristics Digital Etch Comparative Study Reference Device Band Power Gan Hemt Modeling Electron Beam Lithography Iii-Nitrides Process Technology Sheet Resistance Eye Opening Thermal Performance Plasma Damage Conversion Gain Capacitance-Voltage Spurious Suppression Contact Degradation Stress Effects Double Plasma Frequency Multiplier Via Etch Image Signal Ohmic Electrode On-Wafer Off-Chip Low Phase Noise Structural Parameters Algan/Gan Heterostructure Tensile Stress Down Converter Inalas/Ingaas Mhemt Electrical Characteristics State Performance Inp Dhbt Three-Terminal Temperature Dependence Fiber Optic Sic Power Devices High Output Device Reliability Off Current Scaling Effect Gate Insulator Metal Diffusion Stress Conditions Insulating Layer Cross Section Pulsed Power Class-F Stress Engineering Common-Source Trap Effect Current Collapse Measuring Channel Recess Etch High Power Density Electrochemical Potential 3.5 Ghz Wide Bandwidth Different Structures Fluoride-Based Plasma Treatment Intelligent Vehicle Lithography Process Manufacturing Processes CF 4 Dual Gate(DG) Electron Beam Exposure 9.5 GHZ Channel Current Drain Voltage Fully Integrated Thermoelectric Device Output Voltage Deep Reactive Ion Etching Current Gain Cutoff Frequency Return Loss(RL) Storage Test Thick Photoresist Source Region High-Temperature Operation Back Grinding Self-Heating Effect(SHE) Transistor Devices Current-Voltage Characteristics Microwave Characteristics Defect-Free Air-Bridge