ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Gate Length Compound Semiconductor Heterojunction Bipolar Transistors(HBTs) Components Technology T-Shaped Gate Gate Recess Sic Substrate Gan-Based Maximum Oscillation Frequency Breakdown Voltage(BDV) Microwave Monolithic Integrated Circuits(MMIC) Via-Hole W-Band Gate Width 6 Ghz Mim Capacitor Microwave Integrated Circuit Metamorphic High Electron Mobility Transistor(mHEMT) Silicon Nitride Inp Hbt Electrical Properties(I-V curve) Surface Treatments Two-Step Rf Characteristics Dc Characteristics Fabrication Process Self-Aligned And Gate Epitaxial Layer Dielectric Layer 28 Ghz Ohmic Contact Next-Generation Recessed Gate Electrical Characterization Gan Hemt Devices 5 Nm Gate Dielectric Etching Process National Defense Smart Lighting Inp-Based Etching Conditions Platform Development Bi-Layer Wet Etching Fabrication Method Schottky Contacts Ka-Band Normally-Off Rf Performance Low Noise Amplifier(LNA) Device Characteristics Frequency Range Light Sources Device Performance Transimpedance Amplifier(TIA) Gan-On-Sic Hemt 60 Ghz Mechanical Stress Atomic Force Microscope(AFM) Nitride Layer Field Plate Output Power Density Inp/Ingaas Heterojunction 3 V Enhancement-Mode 40 Gb/S Dry Etching T-Gate Performance Degradation Schottky Diode Broadband Amplifier Maximum Output Power Mesa Etching 18 Ghz Electron Beam Lithography Current Density Gate Resistance Optical Transmission Three-Terminal High Power Applications Sic Device X-Band Applications Power Amplifier Mmic Double Heterojunction Bipolar Transistor(DHBT) Recess Depth Carrier Mobility Optical Link Pulsed Power Recess Etch Gas Mixture Radiation Hardness 9.5 GHZ Drain Voltage Minimum Noise Figure 38 Ghz Device Degradation 30 Ghz Transmission System Power Gain Creative Technology Etch Depth Gaas Heterojunction Bipolar Transistor Diode Ideality Factor Mmic Power Amplifier Plasma-Enhanced Chemical Vapor Deposition(PECVD) Threshold Voltage Shift Transfer Characteristics Depletion-Mode Metal Contact S-Band Conversion Loss Dc Measurements Proton Radiation Inductively-Coupled Plasma(ICP) Gate Leakage Current Gate Foot Gan Power Device Off-State Ingap/Gaas Heterojunction Diode Parameters Passivation Layer Atomic Force Microscopy (Afm) Citric Acid Gan Hemt Technology Rf Power Metal-Insulator-Semiconductor(MIS) Gallium Nitride (Gan) Transconductance (Gm) Sensor Node Algan/Gan Mishemts Icp Etching Etch Rates Current Status Double-Deck Key Device Radar System Research Institute Zeta Potential(Surface charge) Algan/Gan-On-Si Gan Surface Target Current Process Conditions Noise Characteristics Gain Compression Oscillator Circuit Gate Electrode Communication Infrastructure Electrode Process Water Pressure De-Multiplexer Transport Characteristics Wafer Level Package Electroplated Cu Lattice Mismatch Negative Resistance Post Amplifier(PA) Hot Electrons Metal-Semiconductor Interface Heterostructure Field Effect Transistors Electrochemical Reaction(ECR) Voltage Swing Output Frequency Threading Dislocation Density Oxygen Plasma Treatment High-Frequency Performance Frequency Tuning Range Design And Fabrication O 3 70 Ghz Source Resistance Solid State Power Amplifier Wide Band Gap Thermal Conduction I-V Characteristic(Transport property) Transmission Electron Microscopy(TEM) Diode Characteristics Degradation Mechanism Etch Selectivity Platform-Based Capacitive Coupling Coulomb Scattering Parasitic Components Power Hemt Molecular Beam Epitaxy(MBE) Front Side Bonding Process Duty Cycle(DC) Source And Drain Pinch-Off Control Gate High Power Amplifier(HPA) Treatment Process Ingap/Gaas Hbt Drain Saturation Current Resistive Mixer On-Resistance Integrated Circuit Technology Carrier Transport Noise Performance Asynchronous Processor Contact Reliability Electrical Measurements Oscillating Frequency Noise Level Gate Bias Stress Simulation And Measurement Model Parameter Global Optimization Gate Fabrication Silicon Heterojunction Wire Bonding Tuning Diode High Performance Etch Profile Network Analyzer Single-Ended Nitride Passivation X-Ray Photoelectron Spectroscopy (Xps) Capping Layer Gaas Mmic Parallel-Plate Junction Temperature Semiconductor Heterostructure Small Signal Gain Gan Epilayer Threading Dislocations(TDs) Transmission Line Model Lumped Elements High Temperature Storage Lithography Technology Flip-Chip Bonding Trapped Charge Process Technique Drain Electrode S-Parameter Extraction 5g Mobile Communication Quality Improvement Tetramethylammonium Hydroxide Etching Technique Thermal Stability(TGA) Schottky Layer Metal Deposition Microstrip Line Top Electrode Stress Dependent Device Layout Thermal Stress Subthreshold Slope(SS) Annealing Process Cleaning Process Drain Bias Measurement Data Mesa Structure Through Silicon Vias(TSV) Simplified Circuit Model Technology Infrastructure Etching Rate Floating Gate Ni-Based Three-Layered Ultralow Power(ULP) Positive Slope Pulsed Mode 200 Ghz Raman Spectroscopy 110 Ghz High-Efficiency Power Amplifiers(PAs) Output Matching Wide Temperature Range Saturation Velocity Rf Measurement Fine Pitch Bump Equivalent Circuit Model(ECM) 39 Ghz Image Rejection Mixer Infrastructure Support Input And Output Model And Simulation Carrier Transfer Single-Layer Etching Solution Device Fabrication Ohmic Metal Active Region Atomic Layer Deposition Method Chemical Mechanical Polishing(CMP) Input Signal Metal Layer Si Wafer Schottky Barrier Height Compressive Stress Buffer Layer High Frequency Operation Non-Uniformity Etching Profile Surface Treatment Method Saturation Drain Current Gaas Process Plasma Process Gan Power Amplifier Surface Roughness De-Embedding Molybdenum-Copper Interface Quality Technical Development Stress-Free Selective Area Gate Voltage Ion Implantation Output Characteristics Communication Services Gan Device Failure Analysis(FA) 5g Communications F Max E-Beam Lithography Lossy Transmission Line Carbon-Doped Channel Layer Systematic Study Device Properties Optical Communication Systems Low-Power Operation Open Technology Gan Capping Scattering Parameters(S-parameters) Native Oxide Layer Passivation Film 20 Nm Lo Power Metal Interface High Carrier Concentration Inalas/Ingaas Hemt Limiting Amplifier 94 Ghz Operation Test Indium Content Residual Stress Physical Model Matching Circuit Insertion Layer Degradation Factor Semiconductor Process Surface Characteristics Wideband Operation Sin Deposition Frequency Characteristics Digital Etch Comparative Study Reference Device Band Power Iii-Nitrides Process Technology Sheet Resistance Eye Opening Thermal Performance Plasma Damage Conversion Gain Capacitance-Voltage Millimeter-Wave Band Charge Trapping Temperature-Dependent Spurious Suppression Contact Degradation Stress Effects Double Plasma Operating Conditions Frequency Multiplier S-Parameter Measurement Via Etch Image Signal Ohmic Electrode On-Wafer Off-Chip Low Phase Noise Structural Parameters Algan/Gan Heterostructure Tensile Stress Down Converter Inalas/Ingaas Mhemt Electrical Characteristics State Performance Inp Dhbt Temperature Dependence Fiber Optic Sic Power Devices Epitaxial Structures High Output Thermal Expansion Coefficient(TEC) Device Reliability Off Current Scaling Effect 2 Mm Gate Insulator Metal Diffusion Stress Conditions Insulating Layer Cross Section Stable Process Maximum Frequency Low Energy Stress Engineering Common-Source Trap Effect Current Collapse Packaging Technology Temperature-Controlled High-Frequency Applications Ramp-Up Measuring Channel Technology Trends High Power Density Electrochemical Potential 3.5 Ghz Heteroepitaxial Growth Wide Bandwidth Layer Thickness Dc Output Different Structures Fluoride-Based Plasma Treatment Frequency Bandwidth Gan Hpa Contact Region Intelligent Vehicle Lithography Process Simple And Reliable Manufacturing Processes CF 4 Frequency Efficiency Device Isolation Dual Gate(DG) Electron Beam Exposure Channel Current Fully Integrated Thermoelectric Device Output Voltage Temperature Effect Deep Reactive Ion Etching Current Gain Cutoff Frequency Return Loss(RL) Storage Test Thick Photoresist Wet Chemical Etching Source Region Service Market High-Temperature Operation Doping Concentration Pulse Width Back Grinding Self-Heating Effect(SHE) Transistor Devices Current-Voltage Characteristics Microwave Characteristics Gate Annealing Radio Frequency (Rf) Defect-Free Air-Bridge Performance And Reliability Saturation Characteristics