ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Gate Length Maximum Oscillation Frequency Gan-Based Bipolar Transistors T-Shaped Gate Microwave Monolithic Integrated Circuits(MMIC) Gate Recess Breakdown Voltage Drain Current Microwave Integrated Circuits(MICs) 94 Ghz W Band Compound Semiconductor 6 Ghz Inp Hbt Rf Performance Silicon Nitride Two-Step Metamorphic High Electron Mobility Transistor(mHEMT) Process Technology Low-Noise Amplifier(LNA) Gate Width Small Signal Gain 60 Ghz High Power Amplifier 28 Ghz Rf Components Multicast Protocol And Gate Base Station Frequency Range Field Plate Self-Aligned Rf Characteristics Gan Hemt Devices Via-Hole Components Technology Fabrication Process Sic Substrate Recess Depth Matching Circuit Nitride Layer Device Performance Power Characteristics S-Band Overlay Multicast Gallium Nitride (Gan) Transimpedance Amplifier(TIA) Inp-Based Device Characteristics 5 Nm Enhancement Mode(E-mode) Gate Dielectric Creative Technology Gan-On-Sic Hemt 30 Ghz Semiconductor Technology Inp/Ingaas Heterojunction Dc Characteristics T-Gate Next-Generation Sige Bicmos Design And Implementation 40 Gb/S Key Components Ka-Band High Power Applications Output Matching Schottky Contacts Epitaxial Layer Electrical Characterization Diode Ideality Factor Light Source Recess Etch Pulsed Power Data Center Gas Mixtures Streaming Service 18 Ghz Icp Etching Threshold Voltage Shift Gan Hemt Technology Transmission System Mim Capacitor Power Gain Energy-Efficient Power Semiconductor Test-Bed Etching Conditions Transconductance (Gm) Receiver Module Double Heterojunction Bipolar Transistor(DHBT) Depletion-Mode Etch Rates Ohmic Contact Resistance Ku-Band Metal Contact Annealing Process Electron Beam Lithography Normally-Off Inp Heterojunction Bipolar Transistor Electrical Characteristics Multicast Services Fabrication Method Mesa Etching Optical Link Smart Lighting Three-Terminal Application Layer Gate Leakage Current Multicast Delivery Recessed Gate Control Protocol 3 V Multicast Streaming 70 Ghz Radar System Current Density Dc Measurements 2 Mm Input Matching Broadband Amplifier 38 Ghz Optical Transmission Microstrip Line Epitaxial Structure 3.5 Ghz Etch Depth Wireless Communication Output Power Density Gaas Heterojunction Bipolar Transistor Load-Pull Schottky Diode Rf Measurement Gate Resistance Double-Deck Power Amplifier Mmic Electrical Properties New Approach Gate Foot E-Beam Lithography Minimum Noise Figure Inductively Coupled Plasma(ICP) Diode Parameters Citric Acid 9.5 GHZ Ingap/Gaas Heterojunction Drain Voltage Device Degradation Dry Etching Critical Factors Current Status Frequency Characteristics Gan Hpa Wire Bonding Transistor Devices Wide Band Gap Metal Diffusion Intelligent Vehicle Lithography Technology Bonding Process Current-Voltage Characteristics Etching Profile 5g Communication Material Properties Tuning Diode Eye Opening Ghz Band Voltage Swing Molybdenum-Copper Oxygen Plasma Treatment Operating Condition Sic Device Thermal Transport Temperature Dependence 20 Nm Leakage Current Reduction Large Signal Thermoelectric Device Stable Process Die-Attach Gan Device Pinch-Off Fluoride-Based Plasma Treatment Fully Integrated Negative Resistance S-Parameter Measurement Atomic Layer Deposition Method Non-Uniformity Service Market Buffer Layer Complementary Metal-Oxide-Semiconductor(CMOS) Down Converter Driver Amplifier 5g Mobile Communication Off-State Group Communication Sin Deposition Positive Slope Current Collapse Drain Leakage Current Gaas Process Multimedia Streaming Single Chip Source Resistance Active Phased Array Antenna Contact Degradation Data Rate Gain Flatness Key Process Image Sensor Low Energy Surface Treatments S-Parameter Extraction Gate Voltage High-Frequency Performance Integrated Circuit Technology Linear Extrapolation Lithography Process High Temperature Storage Microwave Characteristics Schottky Barrier Height Silicon Heterojunction Design And Fabrication Temperature-Controlled Thermal Stability Degradation Mechanism Gaas Mmic Hot Electrons Mobility Support Operation Test Storage Test Data Delivery Vertical Gan Packaging Technology Drain Electrode Dielectric Layer End To End(E2E) Optical Communication Systems Cost-Effective Frequency Efficiency Model And Simulation Current Gain Cutoff Frequency Metal-Insulator-Semiconductor(MIS) Technology Trends De-Multiplexer Doping Concentration Fmcw Radar Pico-Cell Dc Output Frequency Bandwidth Ni-Based Selective Area Temperature-Dependent Head Position 200 Ghz Single-Ended Band Power Different Structures Device Isolation Etching Solution Reference Device Frequency Multiplier High Voltage Pull Test Power Switching Indium Content Interfacial States Structural Parameters Target Current Electrical Analysis Fine Pitch Bump Insertion Layer Surface Mounting Carbon-Doped De-Embedding Molecular Beam Epitaxy(MBE) Plasma Process Pulse Width Trap Effect Communication Services Drain Bias Reflection Coefficient Inalas/Ingaas Hemt Wideband Operation Mm-Wave Applications Failure Analysis Noise Level Ohmic Metal Radio Frequency (Rf) Surface Characteristics Global Optimization Gan Power Device Contact Region Output Voltage Power Hemt Image Rejection Mixer Wide Bandwidth High Gain Nitride Passivation Measurements Results Process Development Common-Source Channel Current Electrochemical Reactions Model Parameter Multicast Network Research Institute Sige Hbt Communication Infrastructure Etching Technique High Signal Optoelectronic Integrated Circuit Spurious Suppression Device Fabrication Electrode Process Ingap/Gaas Hbt Input Signal Wet Chemical Etching Flip-Chip Bonding Simple And Reliable Simulation And Measurement Plate Structure Semiconductor Heterostructure State Performance Thermal Performance Metal Interface Measuring Channel Cross Section Gain Compression 3-Db Bandwidth Wide Temperature Range Power And Efficiency Characteristics Transmission Line Model Front Side Many-To-Many Measurement Data Mobile Environment Resistive Mixer Key Device Level Control Schottky Layer Heterostructure Field Effect Transistors X-Band Applications Noise Performance National Defense One-To-Many Source And Drain Device Layout Epitaxial Growth High Temperature Operation High Carrier Concentration Off-Chip Electrical Measurements Bicmos Technology Semiconductor Process Double Plasma Gan Power Amplifier Mesa Structure High-Efficiency Power Amplifiers(PAs) Active Region Fiber-Optic Communications Gate Electrode Maximum Output Power Scattering Parameters(S-parameters) Energy Band Gap Electric Vehicles(EV) Multiple Sessions Ohmic Contact Formation Output Power And Efficiency Platform Development Dual Gate(DG) Electrochemical Potential Gate Annealing High Reliability Ohmic Electrode Control Gate Conversion Gain Duty Cycle(DC) Packaging Processes Output Characteristics Post Amplifier(PA) Self-Heating Effect(SHE) Network Analyzer(NA) Noise Characteristic Inp Dhbt Limiting Amplifier(LA) Saturation Characteristics Temperature Effect Conversion Loss Gate Fabrication Wafer Level Package(WLP) Process Conditions High-Frequency Applications On-Wafer Passivation Film Ip Multicast Junction Temperature Sheet Resistance Three-Layered High Output Power Treatment Process Diode Characteristics Floating Gate 39 Ghz Voltage Stability Ingaas Channel Saturation Current Carrier Density Electron Beam Exposure Frequency Tuning Range Oscillating Frequency Rf Power Interface Trap Image Signal Depth-Dependent Reactive Ion Etching Trade-Off Transport Mechanism Scaling Effect Etching Rate Ramp-Up Thermal Stress Technical Development Millimeter-Wave Band Manufacturing Processes Channel Layer Device Reliability Gate Bias 55 Ghz Metal-Semiconductor Interface Oscillator Circuit Process Parameters Low Phase Noise Silicon-Germanium(SiGe) Contact Reliability Wet Etching Process 110 Ghz Operating Frequency Power Performance Inalas/Ingaas Mhemt Plasma-Enhanced Chemical Vapor Deposition(PECVD) Return Loss Ion Implantation Service Overlay