ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Gate Length Heterojunction Bipolar Transistors(HBTs) Compound Semiconductor Components Technology Maximum Oscillation Frequency T-Shaped Gate Drain Current 94 Ghz Gate Recess Breakdown Voltage(BDV) Microwave Monolithic Integrated Circuits(MMIC) W-Band Microwave Integrated Circuit 6 Ghz Gate Width Inp Hbt Metamorphic High Electron Mobility Transistor(mHEMT) Silicon Nitride Multicast Protocol Low Noise Amplifier(LNA) Fabrication Process Self-Aligned Via-Hole Two-Step 28 Ghz Ohmic Contact Next-Generation Electrical Characterization Rf Characteristics S-Band Small Signal Gain Gan Hemt Devices 5 Nm Gate Dielectric National Defense Smart Lighting Dc Characteristics Inp-Based And Gate Platform Development Power Characteristics Wet Etching Schottky Contacts Design And Implementation Overlay Multicast Rf Performance Device Characteristics Frequency Range Light Sources Transimpedance Amplifier(TIA) Matching Circuit Gan-On-Sic Hemt 60 Ghz Sige Bicmos Epitaxial Layer Nitride Layer Field Plate Inp/Ingaas Heterojunction Sic Substrate 40 Gb/S 30 Ghz Streaming Service Output Power Density Three-Terminal High Power Applications Power Amplifier Mmic Double Heterojunction Bipolar Transistor(DHBT) Recess Depth Optical Link Pulsed Power Recess Etch Gas Mixture 3 V 9.5 GHZ Drain Voltage Minimum Noise Figure Enhancement-Mode Multicast Services Multicast Streaming Electrical Properties(I-V curve) 38 Ghz Device Degradation 70 Ghz Transmission System Power Gain Dry Etching Application Layer Creative Technology Etch Depth Gaas Heterojunction Bipolar Transistor Diode Ideality Factor Recessed Gate Threshold Voltage Shift Depletion-Mode Metal Contact Test-Bed Dc Measurements Inductively-Coupled Plasma(ICP) Gate Foot Ingap/Gaas Heterojunction Etching Process Diode Parameters New Approach Citric Acid Output Matching Gallium Nitride (Gan) Etching Conditions Transconductance (Gm) Sensor Node Icp Etching Etch Rates Fabrication Method Ka-Band Normally-Off E-Beam Lithography Multicast Delivery Radar System T-Gate Mim Capacitor Schottky Diode Broadband Amplifier Gan-Based Mesa Etching 18 Ghz Control Protocol Electron Beam Lithography Current Density Gate Resistance Optical Transmission Research Institute Target Current Process Conditions Noise Characteristics Gain Compression Oscillator Circuit Gate Electrode Communication Infrastructure Electrode Process De-Multiplexer Wafer Level Package Negative Resistance High Gain Post Amplifier(PA) Hot Electrons Metal-Semiconductor Interface Heterostructure Field Effect Transistors Electrochemical Reaction(ECR) Voltage Swing Gain Flatness Semiconductor Technology Pull Test Oxygen Plasma Treatment High-Frequency Performance Frequency Tuning Range Design And Fabrication Source Resistance Wide Band Gap Diode Characteristics Degradation Mechanism Power Hemt Molecular Beam Epitaxy(MBE) Front Side Bonding Process Duty Cycle(DC) Source And Drain Pinch-Off Control Gate High Power Amplifier(HPA) Treatment Process Ingap/Gaas Hbt Resistive Mixer Integrated Circuit Technology Noise Performance Reflection Coefficient Asynchronous Processor Contact Reliability Electrical Measurements Oscillating Frequency Noise Level Simulation And Measurement Model Parameter 55 Ghz Plasma-Enhanced Chemical Vapor Deposition(PECVD) Global Optimization Gate Fabrication Silicon Heterojunction Wire Bonding Tuning Diode Saturation Current Data Delivery Network Analyzer Single-Ended Nitride Passivation Gaas Mmic Driver Amplifier Data Rate Junction Temperature Semiconductor Heterostructure Conversion Loss Mobile Environment Transmission Line Model High Signal Gate Leakage Current One-To-Many High Temperature Storage Lithography Technology Flip-Chip Bonding Ip Multicast Drain Electrode Gan Power Device S-Parameter Extraction 5g Mobile Communication Off-State Etching Technique Thermal Stability(TGA) Schottky Layer Microstrip Line Device Layout Annealing Process Drain Bias Measurement Data Mesa Structure Etching Rate Floating Gate Ni-Based Three-Layered Ultralow Power(ULP) Positive Slope 200 Ghz Gan Hemt Technology 110 Ghz High-Efficiency Power Amplifiers(PAs) Rf Power Metal-Insulator-Semiconductor(MIS) Wide Temperature Range Rf Measurement Fine Pitch Bump 39 Ghz Image Rejection Mixer Model And Simulation Etching Solution Device Fabrication Ohmic Metal Active Region Atomic Layer Deposition Method Input Signal Schottky Barrier Height Buffer Layer Non-Uniformity Etching Profile Gaas Process Plasma Process Gan Power Amplifier De-Embedding Molybdenum-Copper Technical Development Selective Area Gate Voltage Multiple Sessions Current Status Ion Implantation Power Performance Output Characteristics Linear Extrapolation Communication Services Service Overlay Double-Deck Gan Device Gate Bias Failure Analysis(FA) Operating Frequency Load-Pull 5g Communications Carbon-Doped Channel Layer Optical Communication Systems Key Device Complementary Metal-Oxide-Semiconductor(CMOS) Scattering Parameters(S-parameters) Mobility Support Passivation Film 20 Nm Device Performance Metal Interface High Carrier Concentration Inalas/Ingaas Hemt Limiting Amplifier Operation Test Bicmos Technology Indium Content Fmcw Radar Maximum Output Power Insertion Layer Semiconductor Process Surface Characteristics Wideband Operation Sin Deposition Frequency Characteristics Reference Device Band Power Process Technology Mm-Wave Application Eye Opening Thermal Performance Conversion Gain Many-To-Many Millimeter-Wave Band Temperature-Dependent Spurious Suppression Contact Degradation Input Matching Double Plasma Operating Conditions Frequency Multiplier Sige Hbt S-Parameter Measurement Image Signal Ohmic Electrode On-Wafer Off-Chip Low Phase Noise Structural Parameters Down Converter Inalas/Ingaas Mhemt Electrical Characteristics State Performance Inp Dhbt Temperature Dependence Fiber Optic Sic Device X-Band Applications Reactive Ion Etching(RIE) Epitaxial Structures High Output Device Reliability Scaling Effect 2 Mm Metal Diffusion Cross Section Stable Process Single Chip Low Energy Common-Source Trap Effect Silicon-Germanium(SiGe) Current Collapse Packaging Technology Temperature-Controlled High-Frequency Applications Ramp-Up Measuring Channel Level Control Technology Trends Electrochemical Potential 3.5 Ghz Wide Bandwidth Dc Output Different Structures Fluoride-Based Plasma Treatment Frequency Bandwidth Gan Hpa Dielectric Layer Contact Region Intelligent Vehicle Lithography Process Simple And Reliable Manufacturing Processes Frequency Efficiency Device Isolation Dual Gate(DG) Electron Beam Exposure Group Communication Channel Current Fully Integrated Thermoelectric Device Output Voltage Temperature Effect Current Gain Cutoff Frequency Return Loss(RL) End To End(E2E) Storage Test Multimedia Streaming Wet Chemical Etching Service Market High-Temperature Operation Doping Concentration Pulse Width Self-Heating Effect(SHE) Transistor Devices Current-Voltage Characteristics Microwave Characteristics Gate Annealing Radio Frequency (Rf) Surface Treatments Multicast Network Saturation Characteristics