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Schottky Barrier Diode(SBD) Algan/Gan Heterostructure Normally-Off Gan Heterostructures Algan/Gan-On-Si Cvd Diamond Dry Etching Low-Rate Semiconductor Device High Power Applications Etching Conditions Gan On Sic 5 Nm High Frequency(HF) Rf Applications Recess Depth High Electron Mobility Transistor(HEMT) High Power Performance High Performance Recent Progress Etching Rate Gan Power Device Thermal Properties Diamond Substrate Large-Scale Thermal Behavior Gan-Based Silicon Substrate Electrical Characteristics Low Turn-On Voltage Turn-On Threshold Voltage Etch-Stop Design And Simulation Forward Current 4h-Sic Reverse Leakage Current Off-State Leakage Cutoff Frequency High Breakdown Voltage Power Semiconductor Dc-Dc Converters Gan-On-Diamond Gan Device High Thermal Conductivity High Efficiency Low On-Resistance Surface Passivation Point Defects Vertical Gan Chemical Vapor Deposition Iii-Nitrides Wide Bandgap Semiconductor Channel Width Current Collapse Gate Recess Channel Length Working Temperature Ohmic Contact Thermal Diffusion Research And Development Critical Electric Field Device Structure Defect Analysis Inductively Coupled Plasma Etching MOS-HEMT Mass Spectrometry Analysis Power Gain Positive And 700 V Rf Power Amplifier Activation Ratio Built-In Voltage Dopant Activation Field Metal Epitaxy Growth Fine Control Gan Transistor Gate Fabrication Gate Leakage Initialization Vector(IV) Renewable Energy(RE) Recessed Gate Silicon Carbide(3C-SiC) Series Resistance Pin Diode 300 Ghz Sic Surface 900 V Trade-Off Annealing Process Built-In Potential Energy Market Fabrication Process Gallium Arsenide(GaAs) Gan Semiconductor High Current High Voltage Applications Harsh Environments High Temperature Characterization Metal Ring Electronic Materials Reverse Breakdown State-Of-The-Art Single Crystal Substrate Surface Surface Area Power Conversion Modules Algan/Gan Mishemts N-Type Doping Ohmic Metal Rapid Development Bulk Growth Different Substrates Forward And Reverse Gallium Oxide Gan Hemt High Switching Speed High Breakdown Field I-V Measurement Low Damage Low Specific On-Resistance Reverse Recovery Charge Power Switching Device Peak Electric Field Power And Frequency(HVPF) Secondary Ion Mass Spectrometry Schottky Barrier Height Thermal Oxidation 7 Mm Al Film Power Transistor Tunable Bandgap Al Doping Al Layer Al Concentration Bulk Crystal Growth Current Status Diamond Semiconductor Etch Rates Gate Bias Ion Implantation Low Contact Resistance Material Properties Self-Heating Pfc Converter Physical Properties Practical Use Thermally Annealing Technology Cad Anode Structure Current Density Device Size Diamond Heat Spreader Fin-Gate Gallium Nitride(GaN) High Voltage Operation High Power Conversion Efficiency Maximum Oscillation Frequency P-Doping Power Amplifiers(PAs) Various Conditions Stop Layer Structural Changes Optimal Conditions Optoelectronic Devices Output Power Density Sic Substrate Au-Free Bipolar Junction Transistors Development Trends Efficiency And Power Fast Switching Speed Gan Fet Limiting Factor Novel Device Short Wavelength Plasma Etching Process Voltage Shift Vth Shift Smooth Morphology On-Current Two-Dimensional Electron Gas(2DEG) Technology Trends Radio Frequency (Rf) Blocking Voltage Doping Profile Doping Method Enhancement-Mode Improved Performance Lift-Off Process Low-Temperature Annealing Low Loss Multi-Step Ring Structure Small-Sized Sapphire Substrates Si Substrate P-Type Gan 16 Nm X-Ray Topography