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Schottky Barrier Diode(SBD) Algan/Gan Heterostructure Normally-Off Gan Heterostructures Semiconductor Device Algan/Gan-On-Si Recent Progress Low-Rate Forward Current Dry Etching Recess Depth Electrical Characteristics Channel Width Silicon Substrate Gan-Based Etching Conditions Trade-Off Cvd Diamond Point Defects Surface Passivation Thermal Behavior Gan Power Device Low Turn-On Voltage High Power Conversion Efficiency Iii-Nitrides Design And Simulation Reverse Leakage Current Structural Changes Current Collapse 4h-Sic High Power Applications Pfc Converter 5 Nm Thermal Properties Rf Power Forward And Reverse Vertical Gan Etch-Stop Mass Spectrometry Analysis MOS-HEMT N-Type Power Density Turn-On Threshold Voltage Device Structure Defect Analysis 700 V Algan/Gan Mis-Hemt Activation Ratio Built-In Voltage Bipolar Junction Transistor Field Metal Fine Control Gate Fabrication Gate Leakage Gan On Sic Initialization Vector(IV) Pin Diode Recessed Gate Sic Surface Dopant Activation 900 V Annealing Process Built-In Potential Etching Process Electronic Materials Etching Rate High Temperature Characterization High Breakdown Voltage High Voltage Applications Inductively-Coupled Plasma(ICP) Off-State Leakage Power Semiconductor Single Crystal Metal Ring Diamond Substrate Gan Hemt I-V Measurement Low Damage Low Specific On-Resistance Peak Electric Field Reverse Recovery Charge Secondary Ion Mass Spectrometry Schottky Barrier Height Thermal Oxidation Al Film Al Doping Al Layer Al Concentration Current Status Gate Bias Gan Device High Efficiency Gan-On-Diamond Low Contact Resistance Power Transistor Thermally Annealing Technology Cad Etch Rates Various Conditions Anode Structure Current Density Chemical Vapor Deposition Device Size Diamond Heat Spreader Fin-Gate P-Doping Efficiency And Power High Electron Mobility Transistor(HEMT) Gate Recess Novel Device Stop Layer Voltage Shift Blocking Voltage Doping Profile Doping Method Enhancement-Mode Improved Performance Lift-Off Process Low-Temperature Annealing Multi-Step On-Current P-Type Gan Ring Structure Smooth Morphology Technology Trends X-Ray Topography 16 Nm