ETRI-Knowledge Sharing Plaform

Schottky Barrier Diode(SBD) Algan/Gan Heterostructure Normally-Off Gan Heterostructures Algan/Gan-On-Si Cvd Diamond Dry Etching Low-Rate Semiconductor Device High Power Applications Etching Conditions Gan On Sic 5 Nm High Frequency(HF) Electrical Characteristics High Electron Mobility Transistor(HEMT) Recess Depth Rf Applications High Power Performance Pin Diode High Performance Etching Rate Gan Power Device Recent Progress Diamond Substrate Thermal Properties Large-Scale Vertical Gan Silicon Substrate Gan-Based Thermal Behavior Low Turn-On Voltage Etch-Stop Turn-On Threshold Voltage Design And Simulation Forward Current Reverse Leakage Current 4h-Sic Off-State Leakage Cutoff Frequency High Breakdown Voltage Power Semiconductor Dc-Dc Converters High Efficiency Gan-On-Diamond Gan Device High Thermal Conductivity Low On-Resistance Point Defects Surface Passivation Chemical Vapor Deposition Iii-Nitrides Current Collapse Channel Width Gate Recess Wide Bandgap Semiconductor Channel Length Ohmic Contact Critical Electric Field Device Structure Defect Analysis Inductively Coupled Plasma Etching MOS-HEMT Mass Spectrometry Analysis Positive And Power Gain Thermal Diffusion Research And Development Working Temperature Activation Ratio Built-In Voltage Dopant Activation Epitaxy Growth Field Metal Gate Fabrication Gate Leakage Gan Transistor Fine Control Initialization Vector(IV) Sic Surface Silicon Carbide(3C-SiC) Rf Power Amplifier Renewable Energy(RE) Recessed Gate 700 V Series Resistance 300 Ghz Single Crystal Annealing Process Built-In Potential Energy Market Fabrication Process Gallium Arsenide(GaAs) Gan Semiconductor High Current High Voltage Applications High Temperature Characterization Power Conversion Modules Trade-Off Reverse Breakdown State-Of-The-Art Electronic Materials Harsh Environments 900 V Substrate Surface Surface Area Metal Ring Ohmic Metal Algan/Gan Mishemts Bulk Growth Different Substrates Forward And Reverse High Switching Speed Gallium Oxide High Breakdown Field I-V Measurement Low Specific On-Resistance Low Damage N-Type Doping Peak Electric Field Power Switching Device Power Transistors Power And Frequency(HVPF) Secondary Ion Mass Spectrometry Schottky Barrier Height Thermal Oxidation Reverse Recovery Charge Rapid Development Al Film Al Doping Al Layer Al Concentration Algan/Gan Hemts Bulk Crystal Growth Current Status Device Applications Diamond Semiconductor Etch Rates Gate Bias Ion Implantation Low Contact Resistance Material Properties Physical Properties Practical Use Pfc Converter Tunable Bandgap Thermally Annealing Technology Cad 7 Mm Self-Heating Anode Structure Current Density Device Size Diamond Heat Spreader Fin-Gate Gallium Nitride(GaN) High Voltage Operation High Power Conversion Efficiency Maximum Oscillation Frequency P-Doping Power Amplifiers(PAs) Various Conditions Sic Substrate Optimal Conditions Optoelectronic Devices Output Power Density Au-Free Bipolar Junction Transistors Development Trends Efficiency And Power Fast Switching Speed Gan Fet High Power Devices Limiting Factor Novel Device Plasma Etching Process Voltage Shift Vth Shift Structural Changes Stop Layer Short Wavelength Sapphire Substrates Si Substrate On-Current P-Type Gan Blocking Voltage Doping Profile Doping Method Enhancement-Mode Improved Performance Lift-Off Process Low Loss Low-Temperature Annealing Multi-Step Technology Trends 16 Nm Two-Dimensional Electron Gas(2DEG) Ring Structure X-Ray Topography Small-Sized Smooth Morphology Radio Frequency (Rf)