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Hyung Seok Lee
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Thin GaN material & device Creative Research Section
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Type Year Title Cited Download
Conference
2024 Electrical characteristics of regrown AlGaN/GaN HEMT for implementation of current aperture vertical electron transistors   곽현탁   한국LED·광전자학회 학술대회 2024, pp.1-1
Conference
2024 Analysis and Impact of Point Defects in Vertical GaN on GaN Diodes Grown by MOCVD   문수영   한국전기전자재료학회 학술 대회 (하계) 2024, pp.1-1
Conference
2024 Analysis and Impact of Point Defects in Vertical GaN on GaN Diodes Grown by MOCVD   Soo-Young Moon   Compound Semiconductor Week (CSW) 2024, pp.1-1
Conference
2024 High breakdown voltage, low specific on-resistance GaN on GaN PiN diodes with low contact resistance on p-type GaN for high power applications   Donghan Kim   Materials Research Society (MRS) Meeting 2024 (Spring), pp.1-2
Conference
2024 Current aperture vertical electron transistor technology based on GaN for high voltage operation   곽현탁   한국LED·광전자학회 학술대회 2024, pp.1-1
Conference
2024 Design and Simulation of Enhanced Power Devices: Integrating GaN FinFETs with NiO for Improved Performance   Soo-Young Moon   한국LED·광전자학회 학술대회 2024, pp.1-2
Conference
2024 High power verical Gan-on-GaN Pin Diode technology   이형석   한국LED·광전자학회 학술대회 2024, pp.1-1
Conference
2024 2kV vertical GaN PiN Diode for High Power Device Applications   Hyung-Seok Lee   한국반도체 학술대회 (KCS) 2024, pp.1-2
Conference
2024 Design and Simulation of Normally-Off GaN FINFET   Soo-Young Moon   한국반도체 학술대회 (KCS) 2024, pp.1-1
Conference
2023 GaN Power Devices for high temperature and high voltage applications   Hyung-Seok Lee   Korean International Semiconductor Conference on Manufacturing Technology (KISM) 2023, pp.1-1
Conference
2023 Fabrication of AlGaN/GaN Heterostructure FET using Multi-Step Ohmic Annealing Process   Zin-Sig Kim   한국반도체 학술대회 (KCS) 2023, pp.746-746
Journal
2023 Technical Trends in Vertical GaN Power Devices for Electric Vehicle Application   이형석   전자통신동향분석, v.38, no.1, pp.36-45
Conference
2021 Technology Trends and Challenges in III-nitride Electronic Materials   배성범   한국진공학회 반도체 및 박막분과 워크샵 2021, pp.1-9
Conference
2021 Defect Analysis of Single Crystal Substrate for III-Nitrides using X-ray Topography   S. B. Bae   한국방사광이용자협회 방사광 이용자 연구 발표회 2021, pp.47-47
Conference
2021 Recent Progress of GaN-based Semiconductor Device Technologies in ETR   Hyung-Seok Lee   Europe-Korea Conference on Science and Technology (EKC) 2021, pp.1-1
Journal
2021 Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates   Zin-Sig Kim   Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435
Conference
2021 Recent progress of Diamond heat spreader for next generation GaN power semiconductor   Hyung-Seok Lee   한국LED·광전자학회 학술대회 2021, pp.1-1
Conference
2020 30 A / 900 V AlGaN/GaN-on-Si Double-Packaged Schottky Barrier Diodes with Controlled Passivation Edge   Jeho Na   International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2020, pp.1-1
Conference
2020 Development and localization status of GaN-on-SiC epi material for RF Power Amplifier   배성범   한국전자파학회 종합 학술 대회 (하계) 2020, pp.185-185
Journal
2020 Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures   Zin-Sig Kim   Journal of Nanoscience and Nanotechnology, v.20, no.7, pp.4170-4175
Conference
2020 Thermal Behavior of AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrate   Zin-Sig Kim   한국 반도체 학술 대회 (KCS) 2020, pp.783-783
Journal
2020 Fabrication of Multi-Fin-Gate GaN HEMTs Using Honeycomb Shaped Nano-Channel   김정진   전기전자재료학회논문지, v.33, no.1, pp.16-20
Conference
2019 Normally-off Field Effect Transistors using fine controlled Recess under Gate Area on AlGaN/GaN Heterostructures   김진식   대한전자공학회 학술 대회 (추계) 2019, pp.215-218
Journal
2019 Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond   Zin-Sig Kim   Journal of Nanoscience and Nanotechnology, v.19, no.10, pp.6119-6122
Journal
2019 High Voltage β-Ga2O3 Power Metal-Oxide-Semiconductor Field-Effect Transistors   문재경   전기전자재료학회논문지, v.32, no.3, pp.201-206
Conference
2019 GaN Device Technology for High Voltage and RF Power Application   Hyung-Seok Lee   한러 과학기술의 날 2019, pp.1-1
Conference
2019 다이아몬드기반 반도체 연구개발 동향   이형석   한국물리학회 학술 논문 발표회 (봄) 2019, pp.1-1
Journal
2019 Technical Trends of Semiconductors for Harsh Environments   장우진   The SEMICON Magazine, v.23, pp.28-36
Conference
2019 Effects of Recess Depth on the Vth-shift for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures   Zin-Sig Kim   한국 반도체 학술 대회 (KCS) 2019, pp.618-619
Journal
2018 Technical Trends of Semiconductors for Harsh Environments   장우진   전자통신동향분석, v.33, no.6, pp.12-23
Conference
2018 Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on CVD Diamond   김진식   대한전자공학회 학술 대회 (하계) 2018, pp.195-198
Conference
2018 Characteristics of beta-Ga2O3 FETs fabricated on Fe-doped S.I. single crystal Ga2O3 substrate   문재경   한국전기전자재료학회 학술 대회 (하계) 2018, pp.1-1
Conference
2018 GaN Cascode FET with On-Current of 38 A and Blocking Voltage of 450 V   Woojin Chang   대한전자공학회 학술 대회 (하계) 2018, pp.753-755
Journal
2018 Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures   Zin-Sig Kim   Solid-State Electronics, v.140, pp.12-17 8
Conference
2018 High Temperature Characterization and Analysis of GaN-on-Diamond FETs   Hyung-Seok Lee   한국 반도체 학술 대회 (KCS) 2018, pp.665-666
Conference
2018 Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on CVD Diamond   Zin-Sig Kim   한국 반도체 학술 대회 (KCS) 2018, pp.1-1
Conference
2017 Current Status of ETRI's GaN Power Device Technology   Jae Kyoung Mun   International Conference on Advanced Electromaterials (ICAE) 2017, pp.1-1
Conference
2017 Fabrication of Schottky Barrier Diodes on AlGaN/GaN Heterostructures on CVD Diamond Substrate   Zin-Sig Kim   Asia-Pacific Workshop on Widegap Semiconductors (APWS) 2017, pp.1-1
Conference
2017 Investigation of GaN Power FETs for High Power Applications   Hyung-Seok Lee   Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2017, pp.1-2
Conference
2017 GaN Power Devices Technology for Next-generation High Efficiency IT Components Components   문재경   대한전자공학회 종합 학술 대회 (하계) 2017, pp.2557-2558
Journal
2017 Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure   Hyun-Soo Lee   Journal of Semiconductor Technology and Science, v.17, no.3, pp.354-362 1
Conference
2017 600 V/10A GaN Power Transistors for High Efficiency and Power Density   Hyung-Seok Lee   한국 반도체 학술 대회 (KCS) 2017, pp.1-2
Conference
2017 Normally-off AlGaN/GaN Field Effect Transistors with Recessed Gate using Ultra-low Rate Dry Etching Conditions   Zin-Sig Kim   한국 반도체 학술 대회 (KCS) 2017, pp.1-1
Conference
2017 LPCVD Si3N4 Gate Dielectric를 적용한 대면적 GaN Cascode MISFET   이현수   한국 반도체 학술 대회 (KCS) 2017, pp.320-320
Journal
2016 GaN Power Devices-Global R&D Status and Forecasts   문재경   전자통신동향분석, v.31, no.6, pp.1-12
Conference
2016 Global R&D Trend of High Efficiency and Low Loss GaN Power Semiconductor Technology   문재경   대한전자공학회 학술 대회 (추계) 2016, pp.939-942
Conference
2016 Ultra-low Rate Dry Etching Conditions for Fabrication of Normally-off Field Effect Transistor on AlGaN/GaN Heterostructure   Zin-Sig Kim   International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1
Journal
2016 Surface Al Doping of 4H-SiC Via Low Temperature Annealing   Junbo Park   Applied Physics Letters, v.109, no.3, pp.1-5 5
Conference
2016 Electrical Characteristics of GaN Power MISHEMTs with GaN-on-Si and GaN-on-SI-SiC epi wafers   문재경   대한전자공학회 종합 학술 대회 (하계) 2016, pp.275-277
Conference
2016 Characteristic of Schottky Barrier Diode on AlGaN/GaN using Mo-based Ohmic Contact   김진식   대한전자공학회 종합 학술 대회 (하계) 2016, pp.400-403
Conference
2015 Improving Breakdown Voltage of SiC Schottky Barrier Diode using Field Metal Ring Structure   Junbo Park   International Conference on Advanced Materials and Devices (ICAMD) 2015, pp.1-1
Journal
2015 0.34 VT AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal   Hyun-Soo Lee   IEEE Electron Device Letters, v.36, no.11, pp.1132-1134 50
Conference
2015 Novel Device Structure of Large Periphery AlGaN/GaN MIS-HEMT for Current Density Improvement   Youngrak Park   International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2
Conference
2015 Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure   Hyun-Soo Lee   International Conference on Solid State Devices and Materials (SSDM) 2015, pp.176-177
Conference
2015 700 V / 20 A Double AlGaN/GaN Lateral Schottky Barrier Diodes with Recessed Anode Structure on Silicon Substrate   Jeho Na   International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2
Conference
2015 Improvement of breakdown characteristics in AlGaN/GaN HEMTs   김기환   한국전기전자재료학회 학술 대회 (하계) 2015, pp.1-1
Journal
2015 Al2O3 Surface Passivation and MOS-Gate Fabrication on AlGaN/GaN High-Electron-Mobility Transistors without Al2O3 Etching Process   Jeong-Jin Kim   Japanese Journal of Applied Physics, v.54, no.3, pp.1-3 1
Conference
2015 낮은 온저항을 갖는 AlGaN/GaN 더블 쇼트키 다이오드에 대한 연구   나제호   한국 반도체 학술 대회 (KCS) 2015, pp.82-82
Conference
2015 Surface Passivation Oxide Study of 4H-SiC Bipolar Junction Transistors   Hyung-Seok Lee   한국 반도체 학술 대회 (KCS) 2015, pp.193-193