ETRI-Knowledge Sharing Plaform

Schottky Barrier Diode(SBD) Algan/Gan Heterostructure Normally-Off Gan Heterostructures Algan/Gan-On-Si Cvd Diamond Dry Etching Low-Rate Semiconductor Device High Power Applications Etching Conditions Gan On Sic 5 Nm High Frequency(HF) Electrical Characteristics High Electron Mobility Transistor(HEMT) Recess Depth Rf Applications High Power Performance High Performance Etching Rate Gan Power Device Recent Progress Diamond Substrate Thermal Properties Large-Scale Vertical Gan Gan-Based Silicon Substrate Thermal Behavior Pin Diode Low Turn-On Voltage Etch-Stop Turn-On Threshold Voltage 4h-Sic Reverse Leakage Current Design And Simulation Forward Current Power Semiconductor Cutoff Frequency High Breakdown Voltage Off-State Leakage Point Defects Dc-Dc Converters Gan-On-Diamond Gan Device High Thermal Conductivity High Efficiency Low On-Resistance Surface Passivation Chemical Vapor Deposition Iii-Nitrides Channel Width Current Collapse Gate Recess Wide Bandgap Semiconductor Channel Length Power Gain Positive And Critical Electric Field Device Structure Defect Analysis Inductively Coupled Plasma Etching Research And Development MOS-HEMT Mass Spectrometry Analysis Ohmic Contact Working Temperature Thermal Diffusion Recessed Gate Renewable Energy(RE) Activation Ratio Built-In Voltage Dopant Activation Epitaxy Growth Fine Control Gate Fabrication Gate Leakage Gan Transistor Initialization Vector(IV) Field Metal Rf Power Amplifier 300 Ghz 700 V Series Resistance Sic Surface Silicon Carbide(3C-SiC) Single Crystal Reverse Breakdown Annealing Process Built-In Potential Electronic Materials Energy Market Gallium Arsenide(GaAs) Gan Semiconductor Fabrication Process High Temperature Characterization Harsh Environments High Current High Voltage Applications Metal Ring Power Conversion Modules 900 V Substrate Surface Surface Area Trade-Off State-Of-The-Art Power And Frequency(HVPF) Reverse Recovery Charge Algan/Gan Mishemts Bulk Growth Different Substrates Forward And Reverse Gallium Oxide High Breakdown Field High Switching Speed I-V Measurement Low Damage Rapid Development Thermal Oxidation Low Specific On-Resistance N-Type Doping Ohmic Metal Peak Electric Field Power Switching Device Power Transistors Secondary Ion Mass Spectrometry Schottky Barrier Height Pfc Converter Physical Properties Practical Use Al Film Al Doping Al Layer Al Concentration Algan/Gan Hemts Bulk Crystal Growth Diamond Semiconductor Device Applications Etch Rates Gate Bias Ion Implantation Current Status Low Contact Resistance Material Properties 7 Mm Self-Heating Tunable Bandgap Thermally Annealing Technology Cad Power Amplifiers(PAs) Anode Structure Current Density Device Size Diamond Heat Spreader Fin-Gate Gallium Nitride(GaN) High Voltage Operation High Power Conversion Efficiency Maximum Oscillation Frequency P-Doping Various Conditions Voltage Shift Plasma Etching Process Au-Free Bipolar Junction Transistors Development Trends Efficiency And Power Fast Switching Speed Gan Fet High Power Devices Limiting Factor Novel Device Optoelectronic Devices Output Power Density Optimal Conditions Vth Shift Structural Changes Sic Substrate Stop Layer Short Wavelength P-Type Gan Ring Structure Blocking Voltage Doping Profile Doping Method Enhancement-Mode Improved Performance Lift-Off Process Low Loss Low-Temperature Annealing Technology Trends Radio Frequency (Rf) Multi-Step On-Current 16 Nm X-Ray Topography Two-Dimensional Electron Gas(2DEG) Small-Sized Sapphire Substrates Si Substrate Smooth Morphology