ETRI-Knowledge Sharing Plaform

Algan/Gan Hemts Gan-Based Power Amplifiers(PAs) 94 Ghz Bipolar Transistors Sige Bicmos Gate Length Maximum Oscillation Frequency Cut-Off Frequency Radiation Hardness T-Shaped Gate Device Performance Breakdown Voltage Compound Semiconductor Enhancement Mode(E-mode) Microwave Monolithic Integrated Circuits(MMIC) Inp Hbt Metal-Insulator-Semiconductor(MIS) Silicon Nitride Gate Recess Microwave Integrated Circuits(MICs) T-Gate 6 Ghz Gate Width Radar System Gate Insulator 5 Nm Gate Dielectric Gan Semiconductor Equivalent Circuit Model Frequency Range 9.5 GHZ Drain Voltage Dc Characteristics Self-Aligned Small Signal Gain Power Gan Threshold Voltage Shift Power Gain Via-Hole Gan Hemt Devices Components Technology Head Size 10 Ghz Normally-Off Proton Irradiation Nitride Layer Passivation Layer Transimpedance Amplifier(TIA) Inp-Based W Band Thin Film Resistor Device Characteristics High Efficiency Gan-On-Sic Hemt Inp/Ingaas Heterojunction Field Plate Two-Step Rf Characteristics X-Band Applications Mmic Power Amplifier Next-Generation Carrier Mobility Maximum Output Power 40 Gb/S Key Components Fabrication Process Sic Substrate Gas Mixtures Performance Degradation Icp Etching Transmission System Gan Hemt Technology Weapon System Performance Improvement Hexagonal Boron Nitride(hBN) Ka-Band High Power Applications Transconductance (Gm) Gate Capacitance Receiver Module Double Heterojunction Bipolar Transistor(DHBT) Depletion-Mode Gan Nanowire Low-Noise Amplifier(LNA) Metal Contact Inp Heterojunction Bipolar Transistor 5g Mobile Epitaxial Layer Fabrication Method Mesa Etching Return Loss Smart Lighting Wire Bonding Optical Link Radiation Tolerance Total Ionizing Dose Effects Two-Stage Bonding Process Recessed Gate Stress Measurement Load Impedance 70 Ghz Matching Circuit High Power Amplifier Dc Measurements Broadband Amplifier Radar Applications S-Band 38 Ghz Device Properties Optical Transmission Design And Fabrication Proton Radiation Etch Depth Output Power Density Dielectric Layer Gaas Heterojunction Bipolar Transistor Schottky Diode And Gate Gate Resistance Sensor Device Electrical Properties Power Added Efficiency(PAE) 30 Ghz Semiconductor Technology Inductively Coupled Plasma(ICP) Mobile Handset Ingap/Gaas Heterojunction Diode Ideality Factor Dry Etching Gas Sensor Light Source Pulsed Power Semiconductor Materials Transistor Devices Three-Terminal Current Status Frequency Characteristics O 3 Radiation Resistance Capacitor Array Current Gain Finite-Element Method(FEM) Intelligent Vehicle Lithography Technology Current-Voltage Characteristics Tuning Diode Data Transfer Etching Profile Gate Leakage Current Material Properties Normally-On Supervised Learning Voltage Swing Temperature Dependence Molybdenum-Copper Eye Opening Noise Modelling Operating Condition Oxygen Plasma Treatment Plasma Damage Sic Device 3 V 20 Nm Thermoelectric Device 60 Ghz Gold Wire Stable Process Computing Time Network Applications Pinch-Off Switching Devices System Cost Signal Modeling Wireless Communication Systems Fluoride-Based Plasma Treatment Fully Integrated Key Design Lossy Transmission Line Mechanical Stress Negative Resistance S-Parameter Measurement Atomic Layer Deposition Method Learning-Based Complementary Metal-Oxide-Semiconductor(CMOS) Driver Amplifier Digital Circuit High Frequency Band Off-State Reflect Signal Sin Deposition Current Density Ball Bonding Hysteresis Phenomenon Positive Slope Radio Frequency (Rf) Performance 2 Mm CF 4 Gaas Process Input Matching Linear Energy Transfer(LET) Mobile System Single Chip Gain Flatness Image Sensor Local Oscillation Low Energy Power Characteristics S-Parameter Extraction Surface Treatments Gate Voltage High-Frequency Performance Silicon Heterojunction Air-Bridge Microwave Characteristics Microstrip Line Parasitic Components Schottky Barrier Height 3.5 Ghz Temperature-Controlled 28 Ghz Geometric Characteristics Mobile Devices Bifet Technology Microstrip Circulator Set Up Simplified Circuit Model Degradation Mechanism Gan-On-Si Hemts Gaas Mmic Packaging Design Technology Competitiveness Packaging Technology Algan/Gan Mishemts Drain Electrode Global Standards Mobility Behavior Optical Communication Systems Cost-Effective Gallium Nitride (Gan) Model And Simulation Short Distance I-V Measurement Key Technology 5g Wireless Communication Transfer Rate De-Multiplexer Fmcw Radar Temperature-Dependent Dc Output High Temperature Ni-Based Rf Measurement Selective Area Verify The Accuracy 200 Ghz Top Electrode Compressive Stress Gate Bias Stress Reference Device Voltage Switching Tensile Stress Double-Deck Device Isolation Device Modeling Integration Density Saturation Drain Current Power Switching Current-Voltage Measurements Etch Profile Structural Parameters Digitally Controlled Surface Mounting Fine Pitch Bump Insertion Layer Thermal Experiment Carbon-Doped Ann Model De-Embedding High Performance Molecular Beam Epitaxy(MBE) Plasma Process Pulse Width Protection Layer Drain Bias Millimeter Wave(mmWave) Physical Model Power Amplifier Mmic Reflection Coefficient Wideband Operation High Power Devices Learning Models Parametric Study Web Application 5g System F MAX Noise Level Ohmic Metal Surface Characteristics Global Optimization Gate Foot Gas Reduction Machine Learning (Ml) Molding Process High-Dimensional Contact Region Electron Trapping Ohmic Contact Output Voltage Power Hemt E-Beam Lithography Wide Bandwidth Digital Etch High Gain Last Stage Low Voltage Nitride Passivation Organic Chemical Satellite Communication System X-Band Radar Impedance Match Model Parameter Minimum Noise Figure Performance Deterioration Rf Amplifier Sige Hbt Diode Parameters Etching Technique High Signal Optoelectronic Integrated Circuit Device Fabrication Wet Chemical Etching Ingap/Gaas Hbt Laser-Assisted Signal Transmission Bond Wire Error Vector Magnitude(EVM) Flip-Chip Bonding Information And Communication Technologies(ICTs) Insertion Loss Process Technique Simulation And Measurement Simple And Reliable Device Degradation Radiation Effects Semiconductor Heterostructure State Performance Silicon Carbide(3C-SiC) Metal Interface Mmic Packaging Parasitic Capacitance Thermomechanical Analysis Wide Temperature Range 5g Networks Aesa Radar Fluorine Ions Gain Compression Recess Etch Sin Passivation Thermal Boundary Conditions Two-Dimensional Electron Gas(2DEG) Yttrium Iron Garnet Capacitive Coupling Front Side Ghz Range Measurement Data Schottky Layer Trapped Charge National Defense Data Center Heterostructure Field Effect Transistors Wire Length Dc Current 18 Ghz Bicmos Technology Output Matching Network Power Signal Solid State Power Amplifier Double Plasma Gan Power Amplifier Mesa Structure Nicr Thin Film Active Region Fiber-Optic Communications Gate Electrode Metamorphic High Electron Mobility Transistor(mHEMT) Scattering Parameters(S-parameters) Recess Gate Platform Development Wireless Local Area Network(WLAN) Dual Gate(DG) Energy-Efficient Large Datasets Power Semiconductor Thermo-Mechanical Reliability Control Gate Duty Cycle(DC) Hetero-Interface Output Characteristics Process Technology Post Amplifier(PA) Temperature Effect Etching Conditions Inp Dhbt Input-Output Limiting Amplifier(LA) Network Analyzer(NA) Wafer Level Package(WLP) Process Conditions Schottky Contacts 11 Ghz On-Wafer True-Time Delay Artificial Neural Network (Ann) Displacement Damage High-Frequency Applications Linearity Improvement Technique Si-Based 25 Years Lumped Elements Monte Carlo Method(MCNP) Mass Production Passivation Film Treatment Process Deterioration Mechanism Design Technology Etch Rates High Output Power Ieee 802.11g Initialization Vector(IV) Parallel-Plate 39 Ghz Floating Gate First Stage Small-Signal Model Continuous Wave(CW) Direct Current(DC) Frequency Tuning Range Measurement Results Oscillating Frequency Rf Power Charging Time Data Preparation Frame Transfer(FT) Reactive Ion Etching Technical Development Thermal Stress Circuit Complexity Charging Effects Design Parameters Frequency Properties Production Technology Cascade Structure Subthreshold Slope(SS) Size Dependence Electron Beam Lithography Power Levels Channel Layer Low Phase Noise Oscillator Circuit Process Parameters Regression Tree Silicon-Germanium(SiGe) Electrical Characteristics Loop Formation Loop Profile Operating Frequency Wet Etching Etching Process Fast And Accurate Ion Implantation Metal-Insulator-Metal (Mim) Capacitor Microwave Applications Plasma-Enhanced Chemical Vapor Deposition(PECVD) Source Degeneration