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Schottky Barrier Diode(SBD) Normally-Off Dry Etching Low-Rate Etching Conditions Algan/Gan-On-Si Algan/Gan Heterostructure Deep Traps Recess Depth P-Type Gate Recess Current Collapse Liquid Precursor Oxide Semiconductor Channel Layer Oxygen Vacancies Reverse Leakage Current Plasma Treatment Nonvolatile Memory Devices Oxide Thin-Film Transistors Diethyl Zinc Etch-Stop Gan Mis-Hemt Low Leakage Current MOS-HEMT N-Type Power Density Visible Light Trap Charges Turn-On Threshold Voltage Atomic Layer Deposition Forward Current Fine Control Gate Fabrication Gate Leakage High Performance Mixed Oxides Oxide Etch Oxide Field Recessed Gate STRETCHABLE ELECTRONICS Simple Structure Transfer Characteristics 900 V Etching Process Etching Rate Gate Dielectric Inductively-Coupled Plasma(ICP) Memory Window Mixing Ratio Room-Temperature Quantitative Description Off-State Leakage Oxide-Free Semiconductor Device Subthreshold Swing(SS) Turn-On Voltage 5 Nm All-Oxide Ald Method And Gate Gan Diode Floating Gate Indium Oxide Thin Films Low Damage On/Off Current Ratio Reverse Recovery Charge Self-Aligned Thermal Oxidation Al Film Bottom Gate Device Properties Energy-Efficient Field-Effect Mobility Gate Bias High Efficiency Non-Recessed Power Transistor Plasma-Enhanced Ald Surface Passivation Etch Rates Cmos Inverter Various Conditions Device Size Light-Sensitive Mesa Etching Fingerprint Sensor Reverse Bias Breakdown Voltage(BDV) Channel Width Electrical Characteristics Efficiency And Power High Electron Mobility Transistor(HEMT) Highly Stable Low Onset Voltage Si-Based Stop Layer Treatment Effects Channel Length Dielectric Layer Enhancement-Mode Gan Heterostructures Lift-Off Process Large Area On-State Current Shallow Traps Smooth Morphology 16 Nm