ETRI-Knowledge Sharing Plaform

Schottky Barrier Diode(SBD) Normally-Off Algan/Gan Heterostructure Etching Conditions Low-Rate Deep Traps Recessed Gate Algan/Gan-On-Si Thin-Film Transistor(TFT) Ohmic Contact Atomic Layer Deposition Nonvolatile Memory Devices Reverse Leakage Current STRETCHABLE ELECTRONICS Subthreshold Swing(SS) Gate Dielectric Turn-On Voltage 5 Nm On/Off Current Ratio Oxygen Vacancies Oxide Semiconductor Bottom Gate Channel Layer Gate Bias Liquid Precursor Breakdown Voltage(BDV) Current Collapse Recess Depth Enhancement-Mode Low Onset Voltage Treatment Effects Vth Shift Stop Layer Silicon Nitride Channel Width 1T-1C DRAM Robotics Applications Si-Based 2 Mm Fluoride Plasma Treatment On-State Current Channel Length Dielectric Layer Gan Heterostructures Gate-Recessed Region High Resistivity Si Substrate Ions Incorporation Intense Pulsed Light Lift-Off Process 16 Nm Smooth Morphology Shallow Traps Top Contact Configuration P-Type Gan Floating Gate Gan Diode High Switching Speed Indium Oxide Thin Films Low Damage Material Analysis Power Switching Device Power Transistors Plasma Dry Etching Secondary Ion Mass Spectrometry Sampling Time(Ts) Thermal Oxidation Reverse Recovery Charge Self-Aligned Oxide Tfts Al Film Cmos Inverter Dc-Dc Converters Different Materials Device Properties Etch Rates Fluorine Ions Energy-Efficient Fabricated Structure Field-Effect Mobility High Efficiency Gan Capping Low On-Resistance Non-Recessed Performance Degradation Surface Passivation 20 Nm Plasma-Enhanced Ald Amorphous Indium-Gallium-Zinc Oxide(a-IGZO) Drain-Induced Barrier Lowering(DIBL) Device Size Fingerprint Sensor Gan-Based Gate Oxide Health Monitoring ICP-RIE Light-Sensitive Plasma Damage Small Devices Reverse Bias Various Conditions Mesa Etching Plasma Gas Optimal Conditions Electrical Characteristics Efficiency And Power High Electron Mobility Transistor(HEMT) Gas Plasma High Power Applications Highly Stable High Reliability Indium Tin Oxide(ITO) Afm Measurement Diethyl Zinc Etch-Stop Gan Mis-Hemt Gan Buffer Low Leakage Current MOS-HEMT Power Density N-Type Turn-On Threshold Voltage Trap Charges Visible Light Oxide Etch Oxide Field Capping Layer Driving Current Forward Current Gate Fabrication Gate Leakage Fine Control High Performance Key Performance Mixed Oxides Transfer Characteristics Simple Structure Oxide-Free Off-State Leakage Performance Metrics Drain Bias Etching Rate Etching Process Highly Stretchable Isolation Region Inductively-Coupled Plasma(ICP) Memory Window Mixing Ratio Subthreshold Slope(SS) Tensile Strain Quantitative Description High-K Capacitor 900 V Room-Temperature Semiconductor Device Ohmic Metal Al-Doped All-Oxide Ald Method And Gate