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Schottky Barrier Diode(SBD) Normally-Off Algan/Gan Heterostructure Etching Conditions Low-Rate Deep Traps Dry Etching Algan/Gan-On-Si Nonvolatile Memory Devices Plasma Treatment Reverse Leakage Current Oxygen Vacancies Oxide Thin-Film Transistors Channel Layer Oxide Semiconductor Liquid Precursor Current Collapse Gate Recess P-Type Recess Depth Etch Rates Field-Effect Mobility High Efficiency Gate Bias Non-Recessed Power Transistor Plasma-Enhanced Ald Surface Passivation Device Size Fingerprint Sensor Light-Sensitive Mesa Etching Reverse Bias Various Conditions Breakdown Voltage(BDV) Channel Width Electrical Characteristics Efficiency And Power High Electron Mobility Transistor(HEMT) Highly Stable Low Onset Voltage Si-Based Stop Layer Treatment Effects 16 Nm Channel Length Dielectric Layer Enhancement-Mode Gan Heterostructures Lift-Off Process Large Area On-State Current Shallow Traps Smooth Morphology Diethyl Zinc Etch-Stop Gan Mis-Hemt Low Leakage Current MOS-HEMT N-Type Power Density Trap Charges Turn-On Threshold Voltage Visible Light Atomic Layer Deposition Forward Current Fine Control Gate Fabrication Gate Leakage High Performance Mixed Oxides Oxide Etch Oxide Field Recessed Gate STRETCHABLE ELECTRONICS Simple Structure Transfer Characteristics 5 Nm Subthreshold Swing(SS) Semiconductor Device Room-Temperature Etching Process Etching Rate Gate Dielectric Inductively-Coupled Plasma(ICP) Mixing Ratio Memory Window Off-State Leakage Oxide-Free Quantitative Description Turn-On Voltage 900 V Floating Gate And Gate All-Oxide Ald Method Gan Diode Indium Oxide Thin Films Low Damage On/Off Current Ratio Reverse Recovery Charge Self-Aligned Thermal Oxidation Al Film Bottom Gate Cmos Inverter Device Properties Energy-Efficient