ETRI-Knowledge Sharing Plaform

Ge-On-Si Illumination Type High Responsivity Sige Hbt Type 1 Data Rate 3-Db Bandwidth Si Photodetector 50 GB 1550 Nm Data Transmission Bulk Silicon Phase Shifter Cost-Effective Down-Conversion Mixer Reduced Pressure Chemical Vapor Deposition P-I-N Photodetectors 5.8 Ghz Low Dark Current Sige Film Bit Error Rate(And BER) Optical Network Applications Petri Net(PN) 2.4 Ghz Performance Levels Photonic Devices TO-CAN Optical Interconnect(OI) 1/F Noise 6 Ghz High Sensitivity Threading Dislocations(TDs) Zno Thin Films Field-Effect Transistors(FETs) Fabrication Process Nano-Device Optical Data Chemical Mechanical Polishing(CMP) Differential Drive Reset Current Silicon Photonics Technology Sige Alloy Experimental Result Silicon Wafer Strained-Si High Temperature Silicon Substrate Sige Bicmos Technology Structure-Related Memory Device Dual-Channel Extinction Ratio Wide Range Spiral Inductor Silicon-Germanium(SiGe) P-Zno Optical Transmission Bulk Cmos Zno Films Waveguide Photodetector 40 Gb/S Ge Photodetectors Low-Cost Base Structure Bottom Electrode Cmos Compatible Process Concurrent Dual-Band Cross-Sectional Imaging Deposition Technique Electrical Properties(I-V curve) Selective Epitaxial Growth(SEG) Resonance Frequency Reconfigurable Fet Rf Isolation Switching Speed Semiconductor Technology Dry Etching Fowler-Nordheim (F-N) Stress Input Power In-Situ Annealing Key Parameters Ict Convergence Memory Interface Novel Method N-Type Transistors Negative Differential Resistance(NDR) Oxidation Of Silicon Parasitic Capacitance Phase Change Material(PCM) Practical Implementation Prostate-Specific Antigen(PSA) P-N Junction Pattern Analysis Process Conditions Threading Dislocation Density Time Effect Annealing Temperature Au Nanoparticles(Au-NPs) Carrier Confinement Current-Voltage Creative Technology Crystal Plane Data Center Driver Circuit Epitaxial Lateral Overgrowth Energy Efficiency Electrical Resistivity Electronic Chips Electronic-Photonic Integration Up-Conversion Mixer Soi Process Radio Link Rf-Magnetron Sputter Deposition Reverse Leakage Current Sige Epitaxial Growth Structure Optimization Surface Immobilization Medium Power Amplifier III-V High-Quality I/O Devices Insulator Material Initialization Vector(IV) Low Concentration Low Power Leakage Mach-Zehnder (Mz) Modulator Non-Volatile Memory(NVM) Novel Technique Noise Performance Oxide Trap Density Operational Voltage Photonic Interconnects P-Doped Quality-Factor(Q-factor) Metal-Insulator Transition Annealing Process Doped Poly-Si Eye Diagram Etching Process Electrical Contact Thermal Stability(TGA) Tensile Strain Signal-To-Noise Quantum Well(QW) Silicon Photonic Integrated Circuits Soi Wafer Silicon Waveguide Situ Doping Hybrid Memory Cube Hole Concentration Insertion Loss Integration Scheme Higher Frequency Network Communication Oxidation Process Polished Si Thermal Variation Buffer Layer Carrier Density Communication Applications Cut-Off Frequency Crystalline State External Quantum Efficiency Top-Down Ultra-High Vacuum Chemical Vapor Deposition Surface Roughness Analysis Surface Potential Si Wafer 1310 Nm Silicon-Based Thin Films Si Channel 65 Nm Ultra-Thin Body(UTB) Enhanced Performance Force Microscopy High Speed Network Heating Layers LOW POWER AND HIGH SPEED Model-Based X-Ray Diffraction Analysis Nonreturn-To-Zero(NRZ) Building Block Coupled Waveguide Current Consumption Complementary Metal-Oxide-Semiconductor(CMOS) 7 Mm Wire-Bonded Silicon Epitaxial Layer System-On-Chip(SoC) Rf Performance Quantum Channel Sound Performance 100 Gb/S Cmos Driver High Throughput(HTP) High Speed Communication High Resistivity Ion Implantation Light Sources Limiting Factors Monolithically Integrated Operating Speed New Method Optical Transceiver Phase Transition Photonic Transceiver Transit Time Applied Bias Atomic Force Microscope(AFM) Avalanche Photodetector Amorphous Sio 2 Compact Model Conversion Gain Chalcogenide Alloys Density Change Doped Silicon On-Board Equipment Silicon Electronics Sige Source Single Channel Single Wafer Si-Cap Surface Analysis Fermi Level Hybrid Electronics Highly Doped Inp Hbt Maximum Oscillation Frequency Optical Communications Photonic Transmitter Power Amplifiers(PAs) Potential Applications Performance Tradeoffs Process Technology P-N Heterojunction Photonic Integrated Circuits (Pics) P-Type Zno Travelling Wave Build-Up Time Data Communication Diffraction Pattern 850 Nm Window Size Receiver Front-End Front-End Circuit High-Performance Computer(HPC) Highly Crystalline Key Role Low Phase Noise Low Voltage Potential Barrier Optimized Process Off-Chip Photonic Circuits And Logic Gates Avalanche Breakdown Voltage Cmos Receiver Cmos Front-End Control Device Cycling Endurance Data Computing 3.5 Ghz Silicon-On-Insulator (Soi) Technology Joule Heating Rf Transmitter Relaxed Sige Single-Chip Sige Bicmos Process Sige Device Sige Virtual Substrates Strain Relief Supply Voltage 2.3 Ghz Second Metal Si Substrate Specific Binding Wavelength Range Small-Sized Fully Integrated Fowler-Nordheim Stress Germanium Photodetector High-Resolution X-Ray Diffraction Interface Circuit Low Noise Localized Oxidation Layer Growth Local Area Modulation Efficiency Minimum Noise Figure Misfit Dislocation Module Performance Material Characteristics On-Chip Measurement Optical Propagation Loss Optical Alignment Optical Power Pulse Width Polycrystalline Silicon(poly-Si) Power Demand