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High Performance Spatial Light Modulator(SLM) Oxide Tfts Channel Length Digital Holography STRETCHABLE ELECTRONICS Digital Hologram High Field-Effect Mobility Data Line Organic Photodiode Oxide Thin-Film Transistors Gate Line Oxide Channel Near-Infrared(NIR) P-Type Optical Components Absorption Features Complementary Metal-Oxide-Semiconductor(CMOS) Device Properties Phase Change Material(PCM) Photoactive Layer Diethyl Zinc Low Noise Indium Oxide Liquid Precursor Molybdenum Oxide Wide Viewing Angle Specific Detectivity Mixed Oxides Electrical Characteristics Holographic Display Gate Insulator Indium Tin Oxide(ITO) Oxygen Vacancies All-Oxide Subthreshold Slope(SS) Subthreshold Swing(SS) Oxide Thin Films Three Dimensional(3D) Pixel Structure Optical Element Oxidizing Agent Sputtering Process Adhesion Properties Back-Channel Etch Cross-Talk Cathode Ray Tube Conductive Paths Dry Etching Electron States Excellent Performance Holography System High-Speed Interface High Density Integration Lossy Dielectric Layer Large Size Low-Power Light Intensity Charge Transfer Naked Eye Quantum Dot(QD) Absorption Profile Next-Generation Non-Volatile Memory(NVM) Oxide Field Tft Array Transmission Line Model Transfer Characteristics Transfer Process Reflection-Type Cycle Ratio Continuous Operation Deposition Process Deformable Interconnects Damp Heat Test Electrical Performance Full-Color High-Quality Light Waves Low Temperature(LT) 460 Nm Device Architecture Synergetic Contribution Scaling Behavior Precursor Solution Ultra-High Resolution X-Ray Photoelectron Spectroscopy Weak Light Noise Equivalent Power Oxygen Plasma Voltage Drop Quantitative Description Temporal Response Top Illumination Trade-Off Critical Coupling Charge Storage Double-Gate(DG) Electrical Contact Electronic Product Emotional Experience Erasing And Rewriting Fabrication Process Film Thickness Field-Effect Transistors(FETs) High Responsivity Large-Area Electronics Mixing Ratio Numerical Simulations Small Molecular Spectral Asymmetry Semiconductor Memory Single-Sided Perfect Absorption Pixel Integration Ultrathin Layer 3d Object Ald Process Novel Material On/Off Current Ratio Oxygen Deficient Organic Transistor Thin-Film Phototransistors(TFPT) Rapid Development Atomic Layer Deposition Method Ald Method Broadband Applications Connection System Device Fabrication Functional Additive Glass Substrate Hall Mobility Integrated Electronics Key Components Memory Structure 10-Phenanthroline(BCP) Self-Assembling Stretchable Substrate Pixel Array 3d Image Oxygen Atmosphere Performance Degradation Thin-Film Photodiode Top-Illuminated Trapped Electron(TE) Real-World Bottom Gate Channel Layer Color-Selective Cmos Inverter Display System Dual-Functional Display Panel Device Performance End Functionality Frequency Range Energy-Efficient Gate Bias Image Data Integration Density Multi-Band Metal Surface Deposition Temperature Superior Performance Plasma-Enhanced Atomic Layer Deposition Persistent Photoconductivity Plasma-Enhanced Ald Power Integrated Circuits Visible Range 20 Nm Zinc Oxide(ZnO) Absorption Properties Oxide Electronics Optical Simulation Spectral Absorption Tri-Layer Tin (Iv) Oxide Subwavelength Metallic Gratings Amorphous Oxide Semiconductor Binary Pattern Best Performance Comparative Study Charge Extraction Etching Damage Fingerprint Sensor High Mobility Hyper-Realistic Hole Mobility High External Quantum Efficiency Image Sensor Integrated System Laser Writing Computer Generated Holograms(CGH) Numerical Study Wearable Device 9-Dimethyl-4 Active Layer Thickness Total Resistance Two-Dimensional Image Structural Parameters Small Size Active Matrix Coupling Conditions Channel Width Channel Potential Dark Current High Refractive Index High Photoresponsivity Highly Stable Image Hologram High-Resolution Displays Liquid Crystal Inorganic Semiconductors Very Large Scale Integration(VLSI) Mechanical Strain Stable Performance Soft Electronics Photo-Generated Holes Phase Modulation Vacuum Deposition Thin Structure 7-Diphenyl-1 Absorption Characteristic Operational Stability Neuromorphic Hardware Simulation Results Still Image Bulk Heterojunction Current Injection Detection Band Dominant Parameter Film Formation High-Capacity K-Doped Large Display Low-Cost Linear Dynamic Range Memristor Device Resonant Cavity Solution-Processed Manufacturing Processes Proof-Of-Concept Performance And Reliability Ultraviolet Laser 20th Century