ETRI-Knowledge Sharing Plaform

High Performance Oxide Tfts Spatial Light Modulator(SLM) Digital Holography Channel Length Oxide Thin-Film Transistors Organic Photodiode Data Line STRETCHABLE ELECTRONICS High Field-Effect Mobility Digital Hologram Photoactive Layer Electrical Characteristics Complementary Metal-Oxide-Semiconductor(CMOS) Device Performance Hyper-Realistic All-Oxide Liquid Precursor Device Properties Pixel Structure Indium Tin Oxide(ITO) Subthreshold Swing(SS) Gate Insulator Specific Detectivity Near-Infrared Indium Oxide Diethyl Zinc Oxide Channel Low Noise Optical Components Emotional Experience Holographic Display Three Dimensional(3D) Highly Stable Oxide Thin Films Oxygen Vacancy Ultra-High Resolution P-Type Absorption Feature Molybdenum Oxide Phase Change Material(PCM) Wide Viewing Angle Mixed Oxides Subthreshold Slope(SS) Gate Line Film Thickness High Capacity Photogenerated Holes Thin-Film Phototransistors(TFPT) Conductive Paths Deformable Interconnects Glass Substrate High Density Integration Quantum Dots(QD) Charge Storage Functional Additive Lossy Dielectric Layer Total Resistance Image Hologram 20 Nm Memory Structure Quantitative Description Back-Channel Etch End Functionality Precursor Solution 460 Nm Tin (Iv) Oxide K-Doped Atomic Layer Deposition Method Light Waves Optical Simulation Mechanical Strain Plasma-Enhanced Atomic Layer Deposition Highly Conductive Device Architecture Double-Gate(DG) Nonvolatile Memory(NVM) Tft Array Tri-Layer Electronic Product Field Effect Transistor(FET) Image Sensor Light Intensity Adhesion Properties Al Layer Plasma-Enhanced Ald Stretchable Substrate Top Illumination Self-Assembling Visible Range Memristor Device Noise Equivalent Power 3d Object Cross Talk Electron States Low-Cost Reflection-Type Computer Generated Holograms(CGH) Erasing And Rewriting Wearable Devices Chemical Reactivity Liquid Crystals(LCs) Operational Stability Thin-Film Photodiode High-Quality Oxide Field Performance And Reliability 20th Century Vacuum Deposition Bilayer Electrodes Numerical Studies Transfer Process Small Size Still Image Full-Color Channel Width Continuous Operation Organic Transistor Excellent Performance Electrical Contact Resonant Cavity Numerical Simulation(Trnsys16) Comparative Study Integration Density Low Temperature Scaling Behavior Film Formation Structural Parameters Damp Heat Test Naked Eye Voltage Drop Inorganic Semiconductors Integrated Electronics Best Performance Charge Extraction Low Power Laser Writing Linear Dynamic Range Color-Selective Small Molecular Deposition Process Oxygen Atmosphere 9-Dimethyl-4 Solution-Processed Cycle Ratio Synergetic Contribution Simulation Results Mixing Ratio Ultrathin Layer Bulk-Heterojunction Etching Damage Large-Area Electronics Charge Transfer High-Speed Interface Absorption Profile Active Layer Thickness Display System Device Fabrication Oxidizing Agent Frequency Range Metal Surface Persistent Photoconductivity Dry Etching High Refractive Index Ald Method Deposition Temperature Power Integrated Circuits Real-World Binary Pattern Large Size Transmission Line Model Change In Resistance Proof-Of-Concept Cmos Inverter Holography System Electrical Performance Integrated System Next-Generation Performance Degradation 10-Phenanthroline Thin Structure Active Matrix Current Injection Pixel Integration Very Large-Scale Integration(VLSI) Optical Element Neuromorphic Hardware Spectral Absorption Bottom Gate Amorphous Oxide Semiconductor Coupling Conditions Two-Dimensional Image Energy-Efficient Key Components Oxide Electronics Phase Modulation Ald Process Dual-Functional Dark Current Absorption Properties Fabrication Process Stretchable Electrodes 3d Images Zinc Oxide(ZnO) Temporal Response Superior Performance Subwavelength Metallic Gratings X-Ray Photoelectron Spectroscopy Stable Performance Absorption Characteristic 7-Diphenyl-1 Spectral Asymmetry Connection System High-Resolution Displays Oxygen Plasma Pixel Array Transfer Characteristics Single-Sided Fingerprint Sensor Hall Mobility Ultraviolet Laser Cathode Ray Tube Channel Potential Hole Mobility Oxygen Deficient Soft Electronics Detection Band Trade-Off Rapid Development Semiconductor Memory Broadband Applications High External Quantum Efficiency High Mobility Perfect Absorption Manufacturing Processes Channel Layer Dominant Parameter Gate Bias High Responsivity On/Off Current Ratio Top-Illuminated High Photoresponsivity Image Data Novel Material Critical Coupling Display Panel Multi-Band Trapped Electron(TE) Large Displays Sputtering Process Weak Light