ETRI-Knowledge Sharing Plaform

Oxide Tfts High Mobility Oxide Thin-Film Transistors Subthreshold Swing(SS) Turn-On Voltage Glass Substrate Gate Insulator 5 Nm P-Type Active Layer Saturation Mobility Flexible Substrate Transparent Thin Film Transistor(TTFT) Liquid Crystals(LCs) High Performance Pulsed Laser Ablation(PLA) Drain Current Next-Generation STRETCHABLE ELECTRONICS Passivation Film Spatial Light Modulator(SLM) Channel Layer Amorphous Zno Process Temperature Room Temperature Switching Characteristics Atomic Layer Deposition Method Instability Mode Double Layered Low-Cost Electronic Properties As 2 Hydrogen Doping Active Materials Positive Charge And Gate Gate Bias Stress Stability Characteristics Indium Oxide Electronic Transport Properties Active Channel Transparent Electronics Highly Stable Transparent Oxide Phase Modulation Vdf-Trfe(PZT/P) Memory Array Electronic Structure Igzo Tfts High Carrier Mobility Uniform Switching Binary Metal Oxide On-Current Positively Charged Reflection Mode Conductive Paths Drain Bias Stress Deformable Interconnects Hybrid-Type High Density Integration Insulator Layer Light Emitting Diodes(LED) Organic Light Emitting Diode(OLED) Superlattice Thin Films Short Time Ambient Light Bias Dependence Stable Operation Memory Device Level Production Linear Mobility Persistent Photoconductivity (Ppc) 3 V 20 Nm Electrical Stress Amorphous Ingazno Technical Feasibility Back-Channel Etch End Functionality Laser Lift-Off(LLO) Device Applications Growth And Transfer Organic Ferroelectric Semiconducting Channel Electric Power Generation Mechanical Strain Reflective Mode Highly Conductive Passivation Layer Smart Window Voltage Change Low-Temperature Process Nonvolatile Memory(NVM) Tft Array Dual-Mode Ionized Donors Liquid Precursor Transparent Memristor Stretchable Substrate Adhesion Properties Phase-Only Modulation Self-Assembling Current Ratio Aliasing Error Indium Tin Oxide(ITO) Applied Voltage Cooling Solution Ferroelectric Gate Non-Paraxial Information Display Wearable Devices Triple-Layer Bottom Contact Structure Design Scaling Up Technical Issues Bias Instability Dielectric Layer Drain Electrode Processing Temperature Parasitic Resistance Stress Conditions Sinx Passivation Wave Propagation Dominant Mechanism Dynamic Bias Oxygen Vacancy Concentration Performance And Reliability Wide Range Transfer Process Vinylidene Fluoride-Co-Hexafluoropropylene(Poly) Vacuum Deposition Active Matrix Display Neutral Donor Channel Structure Novel Method Working Pressure Vertical Channel Top-Gate Digital Holography Coupled With High Growth Rate Organic Transistor Excellent Performance Electrical Contact Graphene Anode Annealing Temperature Heavy Metal Integration Density Layered Films Temperature Gradient Ferroelectric Polarization Gen 2 Highly Stretchable Microelectronic Devices Thin Film Thermoelectric Silicon Nitride Fabrication And Characterization Inorganic Semiconductors Integrated Electronics Staggered Structure Oled Display Thermoelectric Materials High Electrical Performance Rolled-Up Subgap States Donor Defects Electronics Properties Oxygen Atmosphere Device Structure Free Space Low Power Consumption Organic-Inorganic Hybrid Pecvd Sinx Simulation Results Switching Operation Zno Layer Electronic Products Effective Channel Length Gate Dielectric On/Off Ratio Plastic Substrate Patterned Graphene Surface Contamination Gate Pulse Stable Characteristics Under Sampling Etch Stop Layer Large-Area Electronics Highly Transparent Metal Oxide Thin Films Annealing Time Device Stability Memory Cell Alumina Film High Resolution Metal Surface Spherically Symmetric Numerical Error Health Monitoring Hybrid Thin Film Real-World Transparent Electrode Angular Spectrum Sampling Number Degradation Behavior Amorphous Si Doping Density Electromotive Force(Back EMF) Flexible And Transparent Process Optimization Solution Process Zno Thin Films Three Dimensional(3D) Amorphous Oxide Instability Mechanism Integrated System Performance Degradation Thin Film Materials Thermoelectric Generator(TEG) Film Structure Graphene-Metal Nanocomposite Structure Threshold Voltage Shift High Accuracy Very Large-Scale Integration(VLSI) Near-Field First Stokes(S1) Bottom Gate Contact Structure Gate Electrode Positive And Negative Different Materials Emissive Layer(EL) Flexible Backplane Low Hysteresis Oxide Electronics Dual-Functional High Reliability High Field-Effect Mobility Selective Doping Electrically Controlled Birefringence Fabrication Process Output Characteristics Polyethylene Naphthalate Robotics Applications Oxide Film Superior Performance Fourier Space Soft Platforms Field-Induced Flexible Display Practical Use Sno2 Nanoparticles Ultra-Thin Charge Trapping Fabricated Structure Improved Stability Non-Uniform Sampling Stress Test Instability Phenomena Single-Sided Charge Barrier Connection System Disturb-Free Organic Semiconductor Material(OSC) Pulsed-Laser Deposition(PLD) Excellent Stability Thin Film Electronics Complementary Logic Gates Electronic Circuit Hydrogen Incorporation Large-Area Graphene Negative Bias Stress Surrounding Environment Soft Electronics Electron Mobility Trade-Off Thermoelectric Thin Film Ferroelectric Memory Nanocomposite Thin Films Metal Oxide Semiconductor Field Propagation Flexible Thin Film Transistors High Stability Indium Zinc Oxide Thermal Atomic Layer Deposition Short Channel Subthreshold Slope(SS) Tensile Strain Graphene Films Indium Zinc Tin Oxide Negative Shift Experiment Results Stability Enhancement Thermoelectric Figure Of Merit