ETRI-Knowledge Sharing Plaform

High Mobility Oxide Tfts Subthreshold Swing(SS) Oxide Thin-Film Transistors Turn-On Voltage Gate Insulator Next-Generation Pulsed Laser Ablation(PLA) Spatial Light Modulator(SLM) Transparent Thin Film Transistor(TTFT) Drain Current 5 Nm Glass Substrate Oxygen Vacancies Channel Layer Liquid Crystal P-Type Flexible Substrate Saturation Mobility Active Channel Reflective Mode Hydrogen Doping Process Temperature I-V Characteristic(Transport property) Electronic Transport Properties High Performance STRETCHABLE ELECTRONICS Switching Characteristics Atomic Layer Deposition Method Dual-Mode Electronic Structures Organic Light-Emitting Diodes(OLEDS) As 2 Electronic Properties Passivation Film Stability Characteristics Vdf-Trfe Active Layer Indium Oxide Surrounding Environment Ambient Light Instability Modes Laser Lift-Off Phase Modulation Amorphous Zno Flexible Backplane High Carrier Mobility Memory Array Thermal Atomic Layer Deposition Annealing Time Adhesion Properties Back-Channel Etch Bias Dependence Charge Barrier Channel Structure Conductive Paths Device Structure Doping Density Device Stability Electrically Controlled Birefringence Excellent Performance Ferroelectric Memory Gate Electrode Graphene-Metal Graphene Anode High Growth Rate Hybrid-Type High Accuracy Instability Mechanism High Density Integration Microelectronic Devices Metal Oxide Semiconductor Nanocomposite Thin Films Novel Method Near-Field Polyethylene Naphthalate Subgap States Stability Enhancement Surface Contamination Top-Gate Under-Sampling Vinylidene Fluoride-Co-Hexafluoropropylene(Poly) Zno Layer Ultra-Thin Amorphous Ingazno Annealing Temperature Bottom Contact Dynamic Bias Double Layered Digital Holography Deformable Interconnects Free Space Field Propagation Fourier Space Flexible Thin Film Transistors Gate Bias Stress Highly Conductive High Electrical Performance Insulator Layer Improved Stability Linear Mobility Metal Oxide Thin Films Non-Volatile Memory(NVM) Non-Uniform Sampling Organic Ferroelectric Reflection Mode Sno2 Nanoparticles Threshold Voltage Shift Tft Array Triple-Layer Transfer Process Trade-Off Active Matrix Display Binary Metal Oxide Coupled With Contact Structure Drain Bias Electron Mobility Etch Stop Layer Film Structure Electronic Product Electrical Contact Fabrication Process Gate Dielectric Flexible Display High Stability High-Resolution Large-Area Electronics Low-Temperature Process Negative Shift On/Off Ratio Room-Temperature Oled Display Subthreshold Slope(SS) Semiconducting Channel Spherically Symmetric Sampling Number Single-Sided Three Dimensional(3D) Vertical Channel Zno Thin Films Short Time Active Materials And Gate Amorphous Oxide Connection System Donor Defects Ferroelectric Polarization Integrated Electronics Low Power Consumption Nanocomposite Structure Organic Transistor Self-Assembling Stretchable Substrate Stable Operation Wave Propagation(WP) Flexible And Transparent Bottom Gate Bias Instability Device Applications Dual-Functional Field-Effect Mobility End Functionality Fabrication And Characterization Growth And Transfer Gate Pulse Ionized Donors Integration Density Indium Zinc Oxide Metal Surface Non-Paraxial Oxygen Vacancy Concentration Output Characteristics Plastic Substrate Oxygen Atmosphere Processing Temperature Real-World Switching Operation Superior Performance Thin Film Thermoelectric 20 Nm Process Optimization Organic-Inorganic Hybrid Charge Trapping Electronics Properties Emissive Layer(EL) Hybrid Thin Film Information Display Integrated System Liquid Precursor Low Hysteresis Layered Films Memory Device Positive Charge Oxide Electronics Patterned Graphene Pecvd Sinx Structure Design Short Channel First Stokes(S1) Sol-Gel Route Soft Platforms Technical Issues Wearable Device Thermoelectric Materials Current Ratio Electrical Stress Electric Power Generation Ferroelectric Gate Graphene Films Highly Stable Hydrogen Incorporation Inorganic Semiconductors Very Large Scale Integration(VLSI) Large-Area Graphene Memory Cell Mechanical Strain Negative Bias Stress Numerical Error Sinx Passivation Stress Test Superlattice Thin Films Soft Electronics Selective Doping Transparent Memristor Transparent Electronics Transparent Oxide Transparent Electrode Technical Feasibility Wide Range Angular Spectrum Aliasing Error Dominant Mechanism Dielectric Layer Disturb-Free Degradation Behavior Effective Channel Length Experiment Results Gen 2 Heavy Metals Igzo Tfts Indium Zinc Tin Oxide(IZTO) Low-Cost Level Production Neutral Donor On-Current Persistent Photoconductivity (Ppc) Uniform Switching Simulation Results Working Pressure 3 V Performance And Reliability