ETRI-Knowledge Sharing Plaform

Oxide Tfts High Mobility Subthreshold Swing(SS) Oxide Thin-Film Transistors Turn-On Voltage Saturation Mobility 5 Nm Oxygen Vacancies Glass Substrate P-Type Active Layer Gate Insulator Transparent Thin Film Transistor(TTFT) Next-Generation STRETCHABLE ELECTRONICS Spatial Light Modulator(SLM) Drain Current Channel Layer Passivation Film Liquid Crystal Pulsed Laser Ablation(PLA) Flexible Substrate High Performance Active Channel Memory Array Hydrogen Doping Process Temperature I-V Characteristic(Transport property) Double Layered Electronic Transport Properties Gate Bias Stress Switching Characteristics Room-Temperature Active Materials Atomic Layer Deposition Method And Gate Electronic Structures As 2 Stability Characteristics Electronic Properties Vdf-Trfe Indium Oxide Positive Charge Highly Stable Instability Modes Phase Modulation Transparent Electronics Transparent Oxide Amorphous Zno High Carrier Mobility Igzo Tfts Low-Cost Under-Sampling Annealing Time Top-Gate Stability Enhancement Subgap States Adhesion Properties Amorphous Si Back-Channel Etch Bias Dependence Charge Barrier Channel Structure Conductive Paths Device Structure Doping Density Device Stability Electrically Controlled Birefringence Excellent Performance Ferroelectric Memory Gate Electrode Hybrid-Type High Accuracy Graphene Anode High Density Integration High Growth Rate Microelectronic Devices Metal Oxide Semiconductor Novel Method Near-Field Nanocomposite Thin Films Thermal Atomic Layer Deposition Surface Contamination Instability Mechanism Solution Process Polyethylene Naphthalate Graphene-Metal Vinylidene Fluoride-Co-Hexafluoropropylene(Poly) Ultra-Thin Zno Layer Amorphous Ingazno Annealing Temperature Organic Ferroelectric Transfer Process Triple-Layer Sno2 Nanoparticles Smart Window Bottom Contact Dynamic Bias Digital Holography Deformable Interconnects Electronic Circuit Free Space Field Propagation Fourier Space Flexible Thin Film Transistors High Electrical Performance Highly Conductive Improved Stability Insulator Layer Linear Mobility Metal Oxide Thin Films Non-Uniform Sampling Reflection Mode Rolled-Up Non-Volatile Memory(NVM) Pulsed-Laser Deposition(PLD) Parasitic Resistance Tft Array Thermoelectric Generator(TEG) Threshold Voltage Shift Active Matrix Display On/Off Ratio Oled Display Phase-Only Modulation Tensile Strain Three Dimensional(3D) Trade-Off Subthreshold Slope(SS) Semiconducting Channel Sampling Number Spherically Symmetric Binary Metal Oxide Coupled With Cooling Solution Contact Structure Drain Electrode Electron Mobility Etch Stop Layer Film Structure Electrical Contact Electronic Product Flexible Display Gate Dielectric High Stability High-Resolution Highly Stretchable Large-Area Electronics Low-Temperature Process Fabrication Process Negative Shift Short Time Single-Sided Staggered Structure Passivation Layer Vertical Channel Zno Thin Films Thin Film Materials Temperature Gradient Alumina Film Organic Light-Emitting Diodes(OLEDS) Organic Transistor Wave Propagation(WP) Amorphous Oxide Connection System Donor Defects Dual-Mode Ferroelectric Polarization Flexible And Transparent Integrated Electronics Low Power Consumption Nanocomposite Structure Stable Operation Self-Assembling Stretchable Substrate Scaling Up Positively Charged Voltage Change Oxygen Vacancy Concentration Output Characteristics Organic-Inorganic Hybrid Oxygen Atmosphere Real-World Bottom Gate Bias Instability Device Applications Dual-Functional Different Materials End Functionality Fabricated Structure Fabrication And Characterization Gate Pulse Growth And Transfer High Field-Effect Mobility Ionized Donors Indium Zinc Oxide Integration Density Metal Surface Non-Paraxial Superior Performance Switching Operation Practical Use Plastic Substrate Process Optimization Positive And Negative Processing Temperature Performance Degradation 20 Nm Thin Film Thermoelectric Thermoelectric Thin Film Oxide Electronics Structure Design Charge Trapping Electronics Properties Health Monitoring Hybrid Thin Film Information Display Instability Phenomena Integrated System Layered Films Liquid Precursor Low Hysteresis Memory Device Emissive Layer(EL) Surrounding Environment First Stokes(S1) Soft Platforms Short Channel Pecvd Sinx Patterned Graphene Wearable Device Technical Issues Transparent Electrode Technical Feasibility Robotics Applications Ambient Light Current Ratio Complementary Logic Gates Excellent Stability Electric Power Generation Electrical Stress Field-Induced Ferroelectric Gate Graphene Films Hydrogen Incorporation High Reliability Inorganic Semiconductors Indium Tin Oxide(ITO) Large-Area Graphene Laser Lift-Off Very Large Scale Integration(VLSI) Memory Cell Mechanical Strain Negative Bias Stress Numerical Error Selective Doping Silicon Nitride Soft Electronics Stress Conditions Sinx Passivation Superlattice Thin Films Stress Test Wide Range Vacuum Deposition Thermoelectric Materials Thermoelectric Figure Of Merit Transparent Memristor Angular Spectrum Aliasing Error Oxide Film On-Current Simulation Results Reflective Mode Applied Voltage Dominant Mechanism Degradation Behavior Drain Bias Stress Dielectric Layer Disturb-Free Effective Channel Length Electromotive Force Experiment Results Flexible Backplane Highly Transparent Gen 2 Heavy Metals Indium Zinc Tin Oxide(IZTO) Level Production Neutral Donor Stable Characteristics Persistent Photoconductivity (Ppc) Performance And Reliability Working Pressure Uniform Switching 3 V Thin Film Electronics