Type | Year | Title | Cited | Download |
---|---|---|---|---|
Journal
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2019 | Improvement of Proton Radiation Hardness Using ALD-Deposited Al2O3 Gate Insulator in GaN-Based MIS-HEMTs Sung-Jae Chang ECS Journal of Solid State Science and Technology, v.8, no.12, pp.245-248 | 10 | |
Conference
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2019 | Improvement of Proton Radiation Hardness through Bi-layer Gate Insulating System in GaN-based MIS-HEMTs Sung-Jae Chang Internatinoal Conference on Nitride Semiconductors (ICNS) 2019, pp.119-119 |