ETRI-Knowledge Sharing Plaform

Algan/Gan Heterostructure Schottky Barrier Diode(SBD) Gan Heterostructures Normally-Off Cvd Diamond Algan/Gan-On-Si Dry Etching Etching Conditions Low-Rate 5 Nm High Frequency(HF) High Power Applications Recess Depth Rf Applications Sapphire Substrates Gan On Sic High Performance Etching Rate Diamond Substrate Thermal Properties Large-Scale Thermal Behavior High Electron Mobility Transistor(HEMT) High Power Performance Leakage Current Etch-Stop Turn-On Threshold Voltage Cutoff Frequency Gan Power Device High Breakdown Voltage Off-State Leakage Power Semiconductor Semiconductor Device High Efficiency Gan-On-Diamond Gan Device Chemical Vapor Deposition Gan-Based Silicon Substrate Gate Recess Channel Length C-Plane Sapphire Substrate Critical Electric Field Gan Surface Inductively Coupled Plasma Etching Ohmic Contact Resistance Power Gain Positive And Rapid Thermal Annealing(RTA) Thermal Diffusion 40 Nm Research And Development Annealing Temperature Different Temperatures Fine Control Pin Diode Renewable Energy(RE) Recessed Gate Rf Power Amplifier 300 Ghz 900 V Annealing Process Energy Market Fabrication Process Gan Nanowire Gan Semiconductor High Voltage Applications High Temperature Characterization Power Conversion Modules State-Of-The-Art Recent Progress Surface Morphology Thickness Variation Different Substrates High Switching Speed Low Damage Metal Layer Metal Stacking Low Specific On-Resistance Ohmic Metal Power Switching Device Power And Frequency(HVPF) Sensor Device Temperature Profile 7 Mm Dc-Dc Converters Diamond Semiconductor Etch Rates Gas Sensors High Thermal Conductivity Low On-Resistance Low Contact Resistance Power Transistor Tunable Bandgap 20 Nm Composite Metal Diamond Heat Spreader High Voltage Operation Multi-Layer Metal Maximum Oscillation Frequency Power Amplifiers(PAs) Various Conditions Current Collapse Development Trends Electrical Characteristics Efficiency And Power Gan Fet Limiting Factor Optoelectronic Devices Output Power Density Optimal Conditions Plasma Etching Process Vth Shift Stop Layer Sic Substrate Short Wavelength Wide Bandgap Semiconductor Specific Contact Resistance Blocking Voltage Enhancement-Mode Low Loss Multi-Step On-Current P-Type Gan Two-Dimensional Electron Gas(2DEG) Smooth Morphology Si Substrate Radio Frequency (Rf)