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Kim Zin-Sig
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Thin GaN material & device Creative Research Section
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Type Year Title Cited Download
Conference
2024 High breakdown voltage, low specific on-resistance GaN on GaN PiN diodes with low contact resistance on p-type GaN for high power applications   Donghan Kim   Materials Research Society (MRS) Meeting 2024 (Spring), pp.1-2
Conference
2023 GaN Power Devices for high temperature and high voltage applications   Hyung-Seok Lee   Korean International Semiconductor Conference on Manufacturing Technology (KISM) 2023, pp.1-1
Conference
2023 Fabrication of AlGaN/GaN Heterostructure FET using Multi-Step Ohmic Annealing Process   Zin-Sig Kim   한국반도체 학술대회 (KCS) 2023, pp.746-746
Conference
2021 Recent progress of Diamond heat spreader for next generation GaN power semiconductor   Hyung-Seok Lee   한국LED·광전자학회 학술대회 2021, pp.1-1
Journal
2021 Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates   Zin-Sig Kim   Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435
Conference
2020 30 A / 900 V AlGaN/GaN-on-Si Double-Packaged Schottky Barrier Diodes with Controlled Passivation Edge   Jeho Na   International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2020, pp.1-1
Journal
2020 Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures   Zin-Sig Kim   Journal of Nanoscience and Nanotechnology, v.20, no.7, pp.4170-4175
Conference
2020 Thermal Behavior of AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrate   Zin-Sig Kim   한국 반도체 학술 대회 (KCS) 2020, pp.783-783
Conference
2019 Normally-off Field Effect Transistors using fine controlled Recess under Gate Area on AlGaN/GaN Heterostructures   김진식   대한전자공학회 학술 대회 (추계) 2019, pp.215-218
Journal
2019 Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond   Zin-Sig Kim   Journal of Nanoscience and Nanotechnology, v.19, no.10, pp.6119-6122
Conference
2019 GaN Device Technology for High Voltage and RF Power Application   Hyung-Seok Lee   한러 과학기술의 날 2019, pp.1-1
Conference
2019 Effects of Recess Depth on the Vth-shift for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures   Zin-Sig Kim   한국 반도체 학술 대회 (KCS) 2019, pp.618-619
Conference
2018 Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on CVD Diamond   김진식   대한전자공학회 학술 대회 (하계) 2018, pp.195-198
Conference
2018 GaN Cascode FET with On-Current of 38 A and Blocking Voltage of 450 V   Woojin Chang   대한전자공학회 학술 대회 (하계) 2018, pp.753-755
Conference
2018 High Temperature Characterization and Analysis of GaN-on-Diamond FETs   Hyung-Seok Lee   한국 반도체 학술 대회 (KCS) 2018, pp.665-666
Journal
2018 Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures   Zin-Sig Kim   Solid-State Electronics, v.140, pp.12-17 8
Conference
2018 Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on CVD Diamond   Zin-Sig Kim   한국 반도체 학술 대회 (KCS) 2018, pp.1-1
Conference
2017 Fabrication of Schottky Barrier Diodes on AlGaN/GaN Heterostructures on CVD Diamond Substrate   Zin-Sig Kim   Asia-Pacific Workshop on Widegap Semiconductors (APWS) 2017, pp.1-1
Conference
2017 Investigation of GaN Power FETs for High Power Applications   Hyung-Seok Lee   Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2017, pp.1-2
Conference
2017 Normally-off AlGaN/GaN Field Effect Transistors with Recessed Gate using Ultra-low Rate Dry Etching Conditions   Zin-Sig Kim   한국 반도체 학술 대회 (KCS) 2017, pp.1-1
Conference
2017 600 V/10A GaN Power Transistors for High Efficiency and Power Density   Hyung-Seok Lee   한국 반도체 학술 대회 (KCS) 2017, pp.1-2
Conference
2017 LPCVD Si3N4 Gate Dielectric를 적용한 대면적 GaN Cascode MISFET   이현수   한국 반도체 학술 대회 (KCS) 2017, pp.320-320
Conference
2016 Global R&D Trend of High Efficiency and Low Loss GaN Power Semiconductor Technology   문재경   대한전자공학회 학술 대회 (추계) 2016, pp.939-942
Conference
2016 Ultra-low Rate Dry Etching Conditions for Fabrication of Normally-off Field Effect Transistor on AlGaN/GaN Heterostructure   Zin-Sig Kim   International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1
Conference
2016 Characteristic of Schottky Barrier Diode on AlGaN/GaN using Mo-based Ohmic Contact   김진식   대한전자공학회 종합 학술 대회 (하계) 2016, pp.400-403
Conference
2016 Electrical Characteristics of GaN Power MISHEMTs with GaN-on-Si and GaN-on-SI-SiC epi wafers   문재경   대한전자공학회 종합 학술 대회 (하계) 2016, pp.275-277
Conference
2015 Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure   Hyun-Soo Lee   International Conference on Solid State Devices and Materials (SSDM) 2015, pp.176-177
Journal
2015 Ohmic Contact to AlGaN/GaN Heterostructures on Sapphire Substrates   Zin-Sig Kim   Journal of the Korean Physical Society, v.66, no.5, pp.779-784 2