ETRI-Knowledge Sharing Plaform

Algan/Gan Heterostructure Schottky Barrier Diode(SBD) Gan Heterostructures Cvd Diamond Normally-Off Field Effect Transistor(FET) Low-Rate Etching Conditions Dry Etching Algan/Gan-On-Si High Frequency(HF) Recess Depth High Power Applications Rf Applications 5 Nm Thermal Behavior Leakage Current High Performance Diamond Substrate Large-Scale High-Electron Mobility Transistor(HEMT) High Power Performance Gan On Sic Sapphire Substrates Etching Rate Thermal Properties High Breakdown Voltage Gan-Based Turn-On Threshold Voltage Pin Diode Semiconductor Device Gate Recess High Efficiency Gan Power Device Off-State Leakage Cut-Off Frequency Chemical Vapor Deposition Etch-Stop Power Semiconductor Channel Length Gan-On-Diamond Silicon Substrate Gan Device On-Current Diamond Semiconductor Sic Substrate Wide Bandgap Semiconductor Optoelectronic Devices Recessed Gate 20 Nm Switching Devices High Voltage Applications Plasma Etching Process Fine Control Gan Fet Current Collapse Different Temperatures Maximum Oscillation Frequency Various Conditions Recent Progress 40 Nm Diamond Heat Spreader Metal Layer Low Loss Power Conversion Modules Power Transistors Blocking Voltage High Voltage Operation Output Power Density Research And Development(R&D) Low On-Resistance Multi-Layer Metal 900 V Annealing Temperature High Thermal Conductivity State-Of-The-Art Sensor Device Power Amplifiers(PAs) Stop Layer Efficiency And Power Composite Metal Surface Morphology Ohmic Metal Radio Frequency (Rf) Enhancement Mode(E-mode) Low Specific On-Resistance Low Contact Resistance Inductively Coupled Plasma Etching Gan Semiconductor Multi-Step Temperature Profile Critical Electric Field Development Trends Gan Surface Gas Sensor Short Wavelength P-Type Gan Specific Contact Resistance Two-Dimensional Electron Gas(2DEG) Thickness Variation Si Substrate Limiting Factor Optimal Condition Power Gain High Switching Speed Thermal Diffusion Positive And Smooth Morphology Fabrication Process Energy Market Different Substrates Low Damage Power And Frequency(HVPF) Renewable Energy 300 Ghz Rapid Thermal Annealing(RTA) Etch Rates Ohmic Contact Resistance High Temperature Characterization Vth Shift Gan Nanowire Rf Power Amplifier C-Plane Sapphire Substrate Power Switching Device Tunable Bandgap Annealing Process Dc-Dc Converters Electrical Characteristics Metal Stacking 7 Mm