ETRI-Knowledge Sharing Plaform

Algan/Gan Heterostructure Schottky Barrier Diode(SBD) Gan Heterostructures Normally-Off Recess Depth Low-Rate Dry Etching Etching Conditions Sapphire Substrates High Power Applications Silicon Substrate Gan-Based Thermal Behavior Thermal Properties Cvd Diamond 5 Nm Semiconductor Device Leakage Current Algan/Gan-On-Si 40 Nm C-Plane Sapphire Substrate Etch-Stop Ohmic Contact Resistance Power Density Rapid Thermal Annealing(RTA) Turn-On Threshold Voltage Gan Surface Annealing Temperature Different Temperatures Forward Current Fine Control Pin Diode Recessed Gate 900 V Annealing Process Etching Rate Gan Power Device High Temperature Characterization Gan Nanowire High Breakdown Voltage High Voltage Applications Inductively-Coupled Plasma(ICP) Off-State Leakage Power Semiconductor Recent Progress Surface Morphology Trade-Off Thickness Variation Diamond Substrate Forward And Reverse Low Damage Metal Layer Metal Stacking Low Specific On-Resistance Rf Power Sensor Device Temperature Profile Gan Device High Efficiency Gas Sensors Gan-On-Diamond Low Contact Resistance Pfc Converter Power Transistor Etch Rates 20 Nm Various Conditions Composite Metal Chemical Vapor Deposition Diamond Heat Spreader High Power Conversion Efficiency Multi-Layer Metal Channel Width Current Collapse Electrical Characteristics Efficiency And Power Gate Recess Specific Contact Resistance Structural Changes Stop Layer Blocking Voltage Enhancement-Mode Low Turn-On Voltage Multi-Step On-Current P-Type Gan Smooth Morphology