Conference
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2024 |
High breakdown voltage, low specific on-resistance GaN on GaN PiN diodes with low contact resistance on p-type GaN for high power applications
Donghan Kim
Materials Research Society (MRS) Meeting 2024 (Spring), pp.1-2 |
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Conference
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2023 |
GaN Power Devices for high temperature and high voltage applications
Hyung-Seok Lee
Korean International Semiconductor Conference on Manufacturing Technology (KISM) 2023, pp.1-1 |
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Conference
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2023 |
Fabrication of AlGaN/GaN Heterostructure FET using Multi-Step Ohmic Annealing Process
Zin-Sig Kim
한국반도체 학술대회 (KCS) 2023, pp.746-746 |
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Conference
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2021 |
Recent progress of Diamond heat spreader for next generation GaN power semiconductor
Hyung-Seok Lee
한국LED·광전자학회 학술대회 2021, pp.1-1 |
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Journal
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2021 |
Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates
Zin-Sig Kim
Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435 |
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Conference
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2020 |
30 A / 900 V AlGaN/GaN-on-Si Double-Packaged Schottky Barrier Diodes with Controlled Passivation Edge
Jeho Na
International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2020, pp.1-1 |
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Journal
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2020 |
Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures
Zin-Sig Kim
Journal of Nanoscience and Nanotechnology, v.20, no.7, pp.4170-4175 |
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Conference
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2020 |
Thermal Behavior of AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrate
Zin-Sig Kim
한국 반도체 학술 대회 (KCS) 2020, pp.783-783 |
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Conference
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2019 |
Normally-off Field Effect Transistors using fine controlled Recess under Gate Area on AlGaN/GaN Heterostructures
김진식
대한전자공학회 학술 대회 (추계) 2019, pp.215-218 |
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Journal
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2019 |
Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond
Zin-Sig Kim
Journal of Nanoscience and Nanotechnology, v.19, no.10, pp.6119-6122 |
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Conference
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2019 |
GaN Device Technology for High Voltage and RF Power Application
Hyung-Seok Lee
한러 과학기술의 날 2019, pp.1-1 |
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Conference
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2019 |
Effects of Recess Depth on the Vth-shift for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Zin-Sig Kim
한국 반도체 학술 대회 (KCS) 2019, pp.618-619 |
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Conference
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2018 |
Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on CVD Diamond
김진식
대한전자공학회 학술 대회 (하계) 2018, pp.195-198 |
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Conference
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2018 |
GaN Cascode FET with On-Current of 38 A and Blocking Voltage of 450 V
Woojin Chang
대한전자공학회 학술 대회 (하계) 2018, pp.753-755 |
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Conference
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2018 |
High Temperature Characterization and Analysis of GaN-on-Diamond FETs
Hyung-Seok Lee
한국 반도체 학술 대회 (KCS) 2018, pp.665-666 |
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Journal
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2018 |
Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Zin-Sig Kim
Solid-State Electronics, v.140, pp.12-17 |
8 |
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Conference
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2018 |
Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on CVD Diamond
Zin-Sig Kim
한국 반도체 학술 대회 (KCS) 2018, pp.1-1 |
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Conference
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2017 |
Fabrication of Schottky Barrier Diodes on AlGaN/GaN Heterostructures on CVD Diamond Substrate
Zin-Sig Kim
Asia-Pacific Workshop on Widegap Semiconductors (APWS) 2017, pp.1-1 |
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Conference
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2017 |
Investigation of GaN Power FETs for High Power Applications
Hyung-Seok Lee
Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2017, pp.1-2 |
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Conference
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2017 |
Normally-off AlGaN/GaN Field Effect Transistors with Recessed Gate using Ultra-low Rate Dry Etching Conditions
Zin-Sig Kim
한국 반도체 학술 대회 (KCS) 2017, pp.1-1 |
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Conference
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2017 |
600 V/10A GaN Power Transistors for High Efficiency and Power Density
Hyung-Seok Lee
한국 반도체 학술 대회 (KCS) 2017, pp.1-2 |
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Conference
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2017 |
LPCVD Si3N4 Gate Dielectric를 적용한 대면적 GaN Cascode MISFET
이현수
한국 반도체 학술 대회 (KCS) 2017, pp.320-320 |
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Conference
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2016 |
Global R&D Trend of High Efficiency and Low Loss GaN Power Semiconductor Technology
문재경
대한전자공학회 학술 대회 (추계) 2016, pp.939-942 |
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Conference
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2016 |
Ultra-low Rate Dry Etching Conditions for Fabrication of Normally-off Field Effect Transistor on AlGaN/GaN Heterostructure
Zin-Sig Kim
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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Conference
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2016 |
Characteristic of Schottky Barrier Diode on AlGaN/GaN using Mo-based Ohmic Contact
김진식
대한전자공학회 종합 학술 대회 (하계) 2016, pp.400-403 |
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Conference
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2016 |
Electrical Characteristics of GaN Power MISHEMTs with GaN-on-Si and GaN-on-SI-SiC epi wafers
문재경
대한전자공학회 종합 학술 대회 (하계) 2016, pp.275-277 |
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Conference
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2015 |
Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure
Hyun-Soo Lee
International Conference on Solid State Devices and Materials (SSDM) 2015, pp.176-177 |
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Journal
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2015 |
Ohmic Contact to AlGaN/GaN Heterostructures on Sapphire Substrates
Zin-Sig Kim
Journal of the Korean Physical Society, v.66, no.5, pp.779-784 |
2 |
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