ETRI-Knowledge Sharing Plaform

Oxide Tfts Gate Insulator Active Layer Subthreshold Swing(SS) High Performance Glass Substrate Spatial Light Modulator(SLM) Turn-On Voltage Transparent Thin Film Transistor(TTFT) Drain Current Active Channel Electrical Characteristics Zno Thin Films Solution-Processed Gate Bias Stress Vdf-Trfe(PZT/P) Phase Change Material(PCM) Vinylidene Fluoride-Co-Hexafluoropropylene(Poly) Highly Stable First Stokes(S1) Digital Holography Subthreshold Slope(SS) Amorphous Indium-Gallium-Zinc Oxide(a-IGZO) Bias Stability Gate Voltage Next-Generation Device Characteristics Post-Annealing Gate Dielectric Holographic Display Applied Physics Device Stability Fabrication Process Amorphous Silicon Thin-Film Transistors(a-Si TFTs) High Field-Effect Mobility Electrochromic Devices Liquid Crystals(LCs) Device Structure And Gate Emitter Arrays Ferroelectric Gate Double Layered Low-Cost Passivation Layer Tft Array Process Temperature 3 V Indium Tin Oxide(ITO) Channel Layer Charge Trapping 5 Nm Field Emitter Array(FEA) Al-Zn Short Channel Memory Window Flexible Substrate Display Panel On/Off Current Ratio Electrical Stability Atomic Ratio Dry Etching Saturation Mobility Field Emission Displays(FEDs) Ito Film Igzo Thin Film Stability Characteristics Device Performance Transmission Electron Microscopy(TEM) 20 Nm Back-Channel Etch Zinc Indium Oxide Organic Light-Emitting Devices Aperture Ratio Display Applications Phase Modulation Transfer Characteristics Stress Test Flexible Display 3d Images Wet Etching Process Vth Shift Transparent Electrode Positive Bias STRETCHABLE ELECTRONICS Transparent Electronics Digital Hologram Amorphous Igzo Large-Area Electronics Transparent Display Oxide Material Bottom Gate Structure Surface Morphology Control Device Channel Structure Information Display Zno Layer Comparative Study As 2 Top Emission Visible Range Tail States Plasma-Enhanced Atomic Layer Deposition Dual-Mode Monolithically Integrated Organic Layer Metal Oxide Thin Film Transistors Counter Electrode Active Matrix Display Fabrication And Characterization Low Power Consumption Protection Layer Color-Selective Electrical Bias Cu-Doped Zno Simulation Results Surface Roughness Bottom Contact Vertical Channel Trap Density Wide Range Display Technology Positive Charge High Temperature Electronic Properties Optical Performance Pixel Structure Oxygen Partial Pressure Highly Conductive Double-Channel Liquid Metal Surface Treatments Optical And Electrical Properties Annealing Conditions Gate Leakage Current Cie Coordinates Device Applications O 3 Semiconducting Channel Electronic Structure Memory Array Negative Shift Negative Bias Stress Si Wafer Carrier Density Constant Current Stress Ultra-High Resolution Mobility Fluctuation Data Line High-Resolution Displays Transparent Cathode Passivation Film Wide Viewing Angle Etch Selectivity Interfacial Trap Neuromorphic Hardware Threshold Voltage Shift Photolithography Process Positive And Negative Gas Mixtures Good Stability Three Dimensional(3D) Driver Circuit Etch Stop Layer Temperature Stability Electron Trapping Plastic Substrate Crystalline Phase 1 H Source And Drain Zno/Sno 2 Graphene Electrode Gate Electrode Nonvolatile Memory Transistors Oxide Channel Pulsed Laser Ablation(PLA) Current On-Off Ratio High Voltage External Quantum Efficiency Working Electrode Electronic Transport Properties Need For Highly Transparent Stress Conditions Degradation Mechanism Stable Operation Bias Dependence Flexible Electronics Electrochromic Materials Memristor Device Double Buffer Lighting Applications Noise Power Transistor Array Instability Mode Possible Mechanism Flexible Device Wet Chemical Logic Circuit Stretchable Substrate Tris(8-Hydroxyquinoline) Aluminum(III) Quantum Dot(Qdot) Low-Frequency Noise High Density Plasma(HDP) Hyper-Realistic Optoelectronic Devices Bias Temperature Stress High Reflectance Zno Electrode High Carrier Mobility Low Driving Voltage Carrier Concentration Oxygen Vacancy Defects Shield Layer Positively Charged Drain Bias Stress High Density Integration Polymer-Dispersed Liquid Crystal(PDLC) Superlattice Thin Films Hybrid-Type Electrical Stress Atomic Layer Deposition Method Indium-Free Laser Lift-Off(LLO) Gate Line Photo Response Layer Structure Ferroelectric Polymer(PVDF) Crystalline Structure Metal Interconnects Cell Gap Electron Beam Intermediate Electrodes Combinatorial Method Work Function Ultrathin Layer Organic Passivation Matrix Field Vacuum Deposition Wave Propagation Diagonal Length Parasitic Resistance Doping Concentration Novel Method Sn-Doped Zn-In-Sn-O Heat-Treated Coloration Efficiency High Efficiency Organic-Inorganic Hybrid Smooth Surface Optical Components Si Etching Surface Energy Film Composition Triplet State Graphene Anode Voltage-Dependent Electronics Properties Inverted Staggered Rf Sputtering Smart Window Processing Temperature Plasmonic Structures Active Materials Real-Time Thermal Annealing Resonant Cavity White Oleds Voltage Sweep Combinatorial Approach Transfer Process Bias Instability White Light Emitting Diodes Triple-Layer Charge Injection Abnormal Behavior Excellent Performance Technical Issues Post-Heat Treatment Channel Width Red Emitting Hydrogen Doping Full-Color Different Thicknesses Operation Speed Large Size Process Optimization Amorphous Oxide Semiconductor High Accuracy Doped Zno Films Poly (Ethylene Glycol)(PEG) Trap Sites Power Efficiency Etching Method Degradation Behavior Ingazno Tfts Highly Efficient Ultrathin Films Channel Material Gate Stack Hybrid Thin Film A-Si:H Tft Memory Cell Contrast Ratio Solution-Processable Low Voltage Thermal Process Frequency Range Emotional Experience Field Emission Properties Parasitic Capacitance Oxide Electrodes Metal Electrode Light Shield Self-Assembled Monolayers(SAMS) Photo-Stability Cu Ions Channel Thickness Angular Spectrum Fast Response Time Normalized Noise Structural And Optical Properties Thin Film Deposition Microelectronic Devices Seed Layer Bonding Technology Plasma Power Ferroelectric Polarization Integration Density Spatial Light Modulation Scaling Down Environmentally Friendly Facile Route Potential Applications Current Efficiency Analytical Modeling Barrier Layers Liquid-Crystal Display(LCD) Conductive Oxide Semiconductor Films Stability Enhancement Trade-Off Device Reliability Electronic Skin Cavity Structure Excellent Stability Amorphous Zno Annealing Process Hole Mobility Sb-Doped Indium Zinc Tin Oxide Capacitance-Voltage Aluminum-Doped Water Vapor Key Factors Gate Oxide Electric Characteristics Polyethylene Naphthalate Color Gamut Ti-Doped Ito Mo-Doped Zno(ZnO:Mo) Zno Nanorod Ag Film Layered Oxide Pulsed-Laser Deposition(PLD) Non-Uniform Sampling Final Heat Treatment Protective Layer Reactive Sputtering Initialization Vector(IV) X-Ray Photoelectron Spectroscopy Sn-Rich Hydrogen Incorporation Novel Indium Precursor Contact Structure Thin Structure Active Area Spin-Coated Nonvolatile Memory Devices Device Integration Thermal Activation Energy Semiconductor Thin-Film Transistor Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer Insulator Layer Oxide Thickness Amidinate Ligand Memory Structure Active Metasurface Out-Coupling Sampling And Interpolation Graphene Layers Conduction Mechanism Memory Effect Nondestructive Readout Operation Polymerization Reaction Transparent Conductive Continuous Domain Photogenerated Holes Device Configuration Ferroelectric Nature Charge Movement K-Doped Ultrasonic Methods Light Penetration Electrochromic Switching Light Propagation Etch Damage Reversible Deposition Light Waves Ultra-High Density Screen-Printed Lcd Panel Blue Devices Earth-Abundant Materials Frequency Variation Compositional Ratios And Physical Properties Large Numbers Current Path High Potential Pulse Amplitude Reduced Mobility High Diffraction Efficiency Light Response Temperature Dependence Electrical Characterization High Capacity Image Generation Image Hologram Stack Structure Tin (Iv) Oxide Sputter Deposition Transparent Organic Light-Emitting Diodes Memory Applications Conductive Paths Energy-Dispersive X-Ray Spectroscopy Leakage Current Density Charge Storage Power Ratio Static Current Heat Treatment Process Deformable Interconnects Sputtering Target Wavelength Range Switching Devices Blue-Emitting Spin-Casting Color Rendering Index Tapered Holes Oxygen Plasma Treatment Applied Bias Voltage Layer Composition Lossy Dielectric Layer Driven Device Super-Resolution Imaging Reliable Transfer Persistent Photoconductivity (Ppc) Hydroxyl Group Dc Magnetron Sputtering Method Operating Voltage Electronic Holography Anode And Cathode Low Temperature Heat Hydrogen Diffusion Very High Resolution(VHR) Wide Band Gap Electrochromic Supercapacitor Technical Feasibility Space Cooling End Functionality Human Machine Interface(HMI) A-Igzo Tfts Room Temperature Fabrication Total Resistance Emitting Materials Cyclic Operation Reflection Mode Level Production Negative Electrode Plasma Damage Precursor Solution Fluorescent Dye Growth And Transfer Short Time Fast Switching Ambient Light Iridium Complex Density Of States Effect Of Oxygen Switching Characteristics Layer Effect Surface Layer State Maintenance Non-Paraxial Electrode Materials Two Layers Flexible Oxide Thin-Film Transistors Treatment Method Sputtering Pressure Diffusion Of Ions Hard Metal Experimental Study Focused Analysis Oled Degradation Indium Complex Ti Thin Film Optimum Thickness Lightly Doped Drain(LDD) Cross Talk Tin Oxide Films And Logic Galvanostatic Charge/Discharge Low Temperature Processing Initial Stage Dye-Doped Low Resistivity Photo Mask Chemical Vapor Deposited Effect Of Deposition Feature Size Scattering Particles Electrochemical Properties 3d Object Reflective Mode Polyimide Substrate Enhanced Performance Aliasing Error Polycrystalline Silicon Thin-Film Transistor High-Quality Films Carbon Dioxide Electric Power Generation Long-Term Stability Printed Carbon Nanotubes Circuit Architecture Two-Step Annealing Cooling Solution Silicon Oxide Electrolyte Concentration Transparent Memristor Injection Barrier Plasma Sputtering Adhesion Properties Oxygen Gas Programming Pulse Fermi Energy Level Device Properties Pixel Density Good Crystallinity E-Beam Evaporation Metal Layer Ionized Donors Phase-Only Modulation Fluorescence Emission Reflection-Type Crack-Free Mechanical Strain Formation Process Information And Communication Field Enhancement Factor Self-Assembling Organic Photovoltaics Complementary Metal-Oxide-Semiconductor(CMOS) Applied Voltage Shift Register Correlated Color Temperature Arc Discharge Zno Nanocrystalline Films Photo-Responsive Voltage Change 51 V Double-Gate(DG) Performance Parameters Measurement System Key Role Density Functional Theory(DFT) Transparent Conducting Electrode(TCE) Amoled Display Mechanical Surface Treatment Threshold Electric Field Tert-Butyl Dark States Vacuum Annealing Low Leakage Current Electron Microscopy Analysis Wearable Devices Growth Per Cycle Oxygen-Rich Flexible Oled Reflection Characteristics Coupling Enhancement Random Orientation Fully Depleted(FD) Anneal Treatment Scaling Up Operational Stability Critical Damage Wavelength-Selective Blue Oleds Oxygen Vacancy Concentration Polymerization Method Edge Shape Laser Irradiation Level Shifter Pcm Layer Zn Oxide Working Pressure Hysteresis Behavior Liquid Electrolyte Hologram Reconstruction Film Forming Oxidation State Large Viewing Angle Hot Plate 5 Mol%(MgO) Neutral Donor Stretchable Interconnects Plasma Oxidation Amplitude And Phase Information Cooling And Heating Light-Emitting Electrochemical Cells Conventional Devices Amorphous Phase Electrical Contact 20th Century Thermally Induced Power-Law Numerical Simulation(Trnsys16) As Doping Continuous Current Well-Aligned Sinx Passivation Force Microscopy Spatial Frequency Co-Solvent System Visible Transmittance Ionized Physical Vapor Deposition Luminous Efficiency Current-Voltage (I-V) Characteristics Poly-Si Film Dominant Mechanism Erasing And Rewriting Sampling Interval Control Layer Organic Transistor Coupled With Orders Of Magnitude Elastomeric Substrate Key Technology Top Electrode Stacked Structure Small Size Areal Capacitance Remote Phonon Scattering Phosphorescent Dyes Hole Transporting Layer Spectroscopic Analysis Organic And Inorganic Materials Oxide Gate Flexible Electronic Devices Pedot:Pss Layer Propylene Carbonate Low Pressure Structure Design Crystallization Behavior Computer Generated Holograms(CGH) Ambient Air Still Image Diffusion Depth Ion Beam Deposition Color Filters Numerical Studies Interfacial Layer Glass Surface P-Type Oxide Semiconductor Self-Limiting Dielectric Materials Dynamic Bias Atomic Force Microscope(AFM) Sheet Resistivity Triplet Exciton Alloy Thin Film Voltage Stress 2-Dichlorobenzene Flat Panel Display Performance And Reliability Mixed Zone Reconstructed Image Cost-Effective Fabrication Igzo Film 1/F Noise Low Oxygen Co. Kgaa Integrated Electronics Organic Devices Voltage Pulse Stress-Induced Overdrive Voltage Donor Defects Single Buffer Layer Structural Parameters Electrochromic Performance Smart Approach Photo-Annealing Exponential Distribution Reflected Light Fine Pitch Metal-Doped Normal Process Process-Based Xrd Measurements Interconnect Structure External Bias Oxygen Atmosphere Liquid Crystal Device Physical Model 77.80.-E Thin Film Thermoelectric Heavy Metal Plasma Effects Blue Fluorescence Dispersion Factor Long-Run Surface Characteristics Interface Roughness Bias Temperature Instabilities Etching Behavior Gen 2 Diffraction Grating Inorganic Semiconductors Surface-Modified Successful Implementation Chromium Film Voltage Drop Scaling Behavior Stretchable Electrode Naked Eye Cathode Electrode Graphene Devices Laser Writing Source/Drain Electrodes Rolled-Up Staggered Structure Po 2 Pecvd Sinx Pre-Reduction Polarization Effect High Electrical Performance Scale-Up New Approach Coplanar Structure Dense Structure Layered Films Electricity Consumption Power-On Technical Challenges Operation Characteristics Optical Contrast Ferroelectric Field Effect Red Light Relative Intensity Gate Driver Switching Operation Lift-Off Process Required Duration Interface Formation Pzt Films Metal-Oxide-Metal Temperature Gradient Operating Characteristic Organic Electronic Devices Surface Plasmon(SP) New Materials Artificial Intelligence Transparent Anode Accumulation Condition Free Space Energetic Oxygen Hybrid Structure Blue Emission Low Transmittance Thermoelectric Materials Sensor Sensitivity Deposition Process Films Properties Photonic Crystal(PC) Device Design Enhancement Mode(E-mode) Technical Barrier Low Sensitivity Plasma Process Oxidizing Atmosphere Carbon Nanotubes Patterning Mechanism Of Formation Defect Density Red Phosphorescent Thermal Treatments Subgap States Doped Sno 2 Transparent Substrate Film Formation Heat Generation Organic Thin-Film Transistors (Otfts) Emission Characteristics Stable Value Highly Stretchable Passive Type Tin-Zinc Improved Thermal Stability Operating Current Density Cnt Films Temperature Annealing Top-Gate Structure Volume Ratio Anneal Temperature Surface Composition Uniformly Distributed Hall Measurement Nonvolatile Ferroelectric Memory Green Light Electrochemical Reactions Optoelectrical Properties Light Transmission Selective Energy Transfer Under Sampling Spherically Symmetric Low Processing Cost Input Signal Raman Spectroscopy Absorption Profile Low Contact Resistance Electronic Products Numerical Error Display System High Refractive Index N-Channel Ti Film Tio2 Nanoparticles Effective Channel Length Metal Oxide Thin Films White Emission Pl Intensity More Or Less Driving Circuit Vacuum Packaging Fowler-Nordheim Plots Electron Emission Radio Frequency (Rf) Magnetron Sputtering Low Annealing Temperature Doped Oxide Toluene Solvent Zinc-Doped Negative Voltage Alumina Film Dye Molecules Process Development Polarization Switching Von Neumann Temperature Conditions Device Degradation Transparent Tft Bulk Growth Overall Performance Z Axis At Interfaces Negative Bias Illumination Stress Phonon Frequencies Red Phosphorescence Life Time Patterned Graphene Charged Species Power Integrated Circuits Switchable Mirror Square Wave Electron Injection Layer High Purity Inductively Coupled Plasma(ICP) Stable Characteristics Band-Gap Energy Annealing Time Density Of Trap States Energetic Bombardment Subwavelength Resolution Polymer Materials Real-World Channel State Information(CSI) Stacked Oled Optical Modulation Propylene Glycol Microcrystalline Si High Transmittance Pressure Distribution Hydrogenated Amorphous Silicon Covalent Bonding Metallic Zinc Alternative Cathode Deep Level Human Brain Single-Input Gate Pulse Flexible Nonvolatile Memory Rotation Angle Triplet Harvesting Oxidizing Agent Light Emission Metal Surface Thermal-Induced Surface Contamination Light Diffraction Quantitative Measurement Compact Size Host Materials Titanium Electrodes Atomic Diffusion Ald Method Metal Source/Drain(S/D) Etching Damage High-Speed Interface Emission Structure Helicon Plasma Compensation Effect On-State Current Modulation Characteristic Defects Formation Patterning Method Atomic Composition Instability Mechanism White Emitting Oxide Deposition Trapping Effects Dielectric Thickness Device Failure Holography System Binary Pattern Cu Electrodes Contact Configuration Organic Ferroelectric Materials Wide Temperature Range Light Stability Sampling Number Gst Thin Films Fermi Level Solution-Based Synthesis Working Gas Synergetic Effect Tin(Ii) 2-Ethylhexanoate Nanocomposite Structure Self-Aligned And Operation Spin-Coating Method Graphene-Metal Electromotive Force(Back EMF) Harsh Conditions High-Electron Mobility Transistor(HEMT) Amplitude-Only And Reflection Zno Semiconductor Ag Deposition Power Efficient Two-Dimensional Image Active Structure Diffractive Optical Elements Whole Process Table-Top Film Structure Lamination Process Sequential Lateral Solidification Crystallization Temperature Laser Energy Interface Engineering Electron Microscope Ab Initio Molecular Dynamic Simulations Main Current Stable Structure Sky Blue Proof-Of-Concept Block Copolymer(BCP) N-Type Doping Electrophosphorescent Devices Flexible And Transparent Deposition Rate 4-Ethylenedioxythiophene):Poly(Styrenesulfonate)(PEDOT:PSS) Halogen Lamp Cell Structure Rigid Materials Reflection Structure Solvent-Assisted Dependence Of Threshold Voltage Active Region Thin Film Materials Coupling Conditions Near-Field Very Large-Scale Integration(VLSI) Integrated System Subthreshold Current Sub-Micron Emission Current Density Multi-Component Electronic System Spatial And Temporal Ga Content Transparent Conductor Oxide Layer Process Scheme Methyl- Spectral Line Shape Storage System Cmos Inverter Doping Density Scattering Parameters(S-parameters) Sputtering Atmosphere High Uniformity Switching Speed Modulation Scheme Performance Optimization Transparent Oxide Semiconductor Pixel Integration Building Space Minimal Change Computer Architecture Thermoelectric Generator(TEG) Spectral Absorption Design Method Driving Electrode Transmission Line Model Current Noise Emissive Layer(EL) Bottom Electrode Electrically Controlled Birefringence Chemical Bonding State In-Zn-O Off-State Stress Visible Region Chemical Strengthening Energy Consumption Wearable Electronics Stability And Performance Elastic Film Ag Thin Film 1.5 Um Three-Layered 4-Vinylphenol(Poly) Si-Based Igzo Target Red Dopant Electro-Optical Properties Laser Interference Transistor-Type Narrow Channel Zinc Oxide Thin Films Semi-Transparent Black Dye Output Characteristics Off-Axis Practical Use Ambient Conditions Absorption Characteristic Cubic Phases Low Drain Voltage Ion Diffusion Oxide Electronics Vertical Stacking Voltage Inverter Organic Binder Ti Doping Semiconductor Diode Information Recording Ohmic Contact Resistance Barrier Properties High Power Wet Treatment Dual-Functional Soft Platforms Direct-Current Magnetron Sputtering Superior Performance Pixel Array Aging Process Fourier Space Maximum Diameter Charge Barrier Field-Induced Absorption Feature Single-Sided Co-Sputtering Method Dual Gate(DG) Size Scale Xrd Patterns P-Type Tin Oxide Low Electric Field Sensing Film Key Components Absorption Properties Improved Stability Doping Method Connection System Ag-Doped Active Protection Programming Characteristics Pentacene Thin-Film Transistors Organic Electronics Low Resistance Electrode Photo Resist Depletion-Mode Polarizer-Free 4-Point Probe Optimization Methods Silicon Film Disturb-Free Single Step Si Nanoparticles Light Control Instability Phenomena Interface States 1-Methoxy-2-Propanol Contact Noise High-Speed Operation Organic Semiconductor Material(OSC) Cu Concentration Reconstruction Of Hologram Thermal Oxide Voltage Curve Flexible Backplane Charging Current Sno2 Nanoparticles Color Stability Time Dependence Energy Storage(ES) Aligned Nanorods Amorphous-Like Optical Encryption Plasma Assisted Atomic Layer Deposition(PA-ALD) Diffusion Barrier(DB) Subwavelength Metallic Gratings Glass Encapsulation Phosphorescent Materials T-Type Ring Oscillator(RO) Selective Doping Cathode And Anode Short-Range Ordering Improved Efficiency Screen Printing Mass Production Thermal Polymerization Chemical Treatment Excimer Laser Annealing Novel Material Electrical Signal Poly-Si Thin Film Trapping Behavior Field Propagation Operation Method Amorphous Ingazno Thin Film Simulation And Fabrication Large-Area Graphene High Electrical Conductivity Broadband Applications Chromaticity Coordinates Experiment Results Perfect Absorption Visible Light Illumination Surrounding Environment Encapsulation Layer Multi-Band Stretchable Displays Thin Film Electronics Breakdown Field Printing Method Rf Power Optical Transparency Fabry-Perot Resonance Graphene Films White Led Dominant Parameter X-Ray Photoelectron Spectroscopic Oscillating Frequency Trapped Electron(TE) Wrinkled Surface Cathode Ray Tube Power Spectra Density Flat-Band Voltage Channel Noise Oxygen Deficient Annealing Atmosphere Image Data Voltage Scan Flexible Thin Film Transistors High Stability Composition Ratio Pulse Duration Si Film Thickness Indium Zinc Oxide High Mobility Transistor Electrolyte Solution Soft Electronics Tin-Doped Indium Oxide Ultraviolet Laser Doping Agents X-Ray Diffraction Pattern Efficient Operation Single-Layer Channel Potential Spectroscopy Analysis Sub-Pixel Direct Deposition Model-Based Metal Mesh Sonochemical Method Electronic Circuit Bi-Layer Sputtering Process Nanocomposite Thin Films Semiconductor Memory Stable Output Steep Slope Electron Transporting Layer Retention Time Tft Technology Photo-Polymerization Gate Electric Field Display Driver Laser Lithography Electrochromic Behavior Critical Coupling Blue Dopant Hall Mobility Interface Trap Radiant Heat Ac Bias Power Spectral Density(PSD) Oxidized State Low Deposition Temperature Flexible Circuits Coercive Field Multi-Layered Graphene Plasma-Enhanced Chemical Vapor Deposition (Pecvd) Mechanical Durability Growth Rate Turn-On Field In-Zn-Sn-O Case Studies Thermoelectric Figure Of Merit Thermoelectric Thin Film Rapid Development