ETRI-Knowledge Sharing Plaform

Oxide Tfts Gate Insulator Active Layer Subthreshold Swing(SS) High Performance Spatial Light Modulator(SLM) Glass Substrate Transparent Thin Film Transistor(TTFT) Turn-On Voltage Active Channel Drain Current Electrical Characteristics Solution-Processed Gate Bias Stress Zno Thin Films Highly Stable Vdf-Trfe Phase Change Material(PCM) Vinylidene Fluoride-Co-Hexafluoropropylene(Poly) Digital Holography Next-Generation First Stokes(S1) Bias Stability Device Characteristics Post-Annealing Amorphous Indium-Gallium-Zinc Oxide(a-IGZO) Subthreshold Slope(SS) Gate Voltage Gate Dielectric Holographic Display Fabrication Process Device Stability Applied Physics Oxygen Vacancies Low-Cost Ferroelectric Gate 3 V High Field-Effect Mobility Passivation Layer And Gate Emitter Arrays Double Layered Tft Array Electrochromic Device(ECD) Process Temperature Device Structure Amorphous Silicon Thin-Film Transistors(a-Si TFTs) Charge Trapping Channel Layer Field Emitter Array Al-Zn 5 Nm Indium Tin Oxide(ITO) Short Channel Flexible Substrate Igzo Thin Film Stability Characteristics Display Panel 20 Nm Device Performance Memory Window On/Off Current Ratio Atomic Ratio Ito Film Saturation Mobility Electrical Stability Field Emission Display Back-Channel Etch Transmission Electron Microscopy(TEM) Dry Etching Vth Shift Phase Modulation Digital Hologram Tail States Stress Test Transparent Electrode Positive Bias Transparent Electronics Transparent Display Control Device Visible Range Plasma-Enhanced Atomic Layer Deposition White Organic Light-Emitting Diodes Information Display Light Emitting Devices Comparative Study Display Applications Organic Light-Emitting Device(OLED) Flexible Display Oxide Material Top Emission Surface Morphology 3d Image Dual-Mode Bottom Gate Structure As 2 Monolithically Integrated Transfer Characteristics Amorphous Igzo Metal Oxide Thin Film Transistors STRETCHABLE ELECTRONICS Wet Etching Process Large-Area Electronics Zinc Indium Oxide Organic Layers Zno Layer Channel Structure Aperture Ratio Si Wafer Carrier Density Surface Roughness Highly Conductive Liquid Metal Driver Circuit Threshold Voltage Shift Double-Channel Vertical Channel Gate Leakage Current Trap Density Pixel Structure Oxygen Partial Pressure Electrical Bias Negative Shift Annealing Conditions Interfacial Trap Gate Electrode Mobility Fluctuation Protection Layer Temperature Stability Photolithography Process O 3 Degradation Mechanism Etch Selectivity High Voltage Source And Drain Bottom Contact Electronic Transport Properties Ultra-High Resolution Need For Cu-Doped Zno Neuromorphic Hardware Simulation Results Data Line Pulsed Laser Ablation(PLA) Highly Transparent Surface Treatments Working Electrode Display Technology Graphene Electrode Negative Bias Stress Stress Conditions Current On-Off Ratio Wide Range High-Resolution Displays Wide Viewing Angle 1 H Zno/Sno 2 Gas Mixture Memory Array Fabrication And Characterization Nonvolatile Memory Transistors Device Applications High Temperature Electronic Properties Color-Selective Positive And Negative Plastic Substrate Good Stability Passivation Film Positive Charge Optical Performance Transparent Cathode Etch Stop Layer Semiconducting Channel Oxide Channel Constant Current Stress Spatial Light Modulation Crystalline Phase Counter Electrode Active Matrix Display Three Dimensional(3D) External Quantum Efficiency Optical And Electrical Properties Low Power Consumption Electronic Structures Cie Coordinates Electron Trapping Electrochromic Materials Quantum Dot(QD) Combinatorial Method Reactive Sputtering Water Vapor Polyethylene Naphthalate Wet Chemical Transistor Array Hydrogen Doping Stability Enhancement Graphene Anode Ti-Doped Ito High Density Integration Excellent Performance Hybrid-Type Microelectronic Devices Large Size Indium-Free High Accuracy Parasitic Capacitance Novel Method Flexible Device Etching Method Sn-Rich Current Efficiency Bias Dependence Non-Uniform Sampling Cell Gap Double Buffer X-Ray Photoelectron Spectroscopy Noise Power Transfer Process Triple-Layer Zno Nanorod A-Si:H Tft Inverted Staggered Nonvolatile Memory Devices Pulsed-Laser Deposition(PLD) Red Emitting Thermal Process Operation Speed Plasma Power Field Emission Properties Full-Color Initialization Vector(IV) Layer Structure Crystalline Structure Parasitic Resistance Light Shield Smart Window Channel Thickness Analytical Modeling Coloration Efficiency Lighting Applications Conductive Oxide Highly Efficient Ultrathin Layer Facile Route Contact Structure Trade-Off Channel Material Abnormal Behavior Active Area Contrast Ratio Cavity Structure Electronic Skins Ferroelectric Polymer Annealing Process Polymer Dispersed Liquid Crystal(PDLC) Sn-Doped Self-Assembled Monolayers(SAMs) Zno Electrode Wave Propagation(WP) Active Materials Work Function Organic Passivation Real-Time Carrier Concentration Novel Indium Precursor Positively Charged Post-Heat Treatment Stretchable Substrate Different Thicknesses Atomic Layer Deposition Method Ferroelectric Polarization Sub-Micron Gate Line Photo Response Doped Zno Films Oxide Electrodes Trap Sites Stable Operation Barrier Layers High Efficiency Plasmonic Structures Organic-Inorganic Hybrid Processing Temperature Gate Stack Key Factor Fast Response Time Matrix Field Voltage Sweep Oxygen Vacancy Defects Semiconductor Films Shield Layer Voltage-Dependent Possible Mechanism Normalized Noise Thin Film Deposition Bias Instability Protective Layer Seed Layer Process Optimization Integration Density Optical Components Diagonal Length Poly (Ethylene Glycol)(PEG) Power Efficiency Environmentally Friendly Sb-Doped Scaling Down Frequency Range Ingazno Tfts Bias Temperature Stress Hole Mobility Rf Sputtering Hybrid Thin Film Smooth Surface Gate Oxide Liquid Crystal Display(LCD) Triplet State Electronics Properties Technical Issues Spin-Coated Solution-Processable Device Integration Electron Beam Thermal Activation Energy Bonding Technology Amorphous Oxide Semiconductor Potential Applications Capacitance-Voltage High Reflectance Photo-Stability Layered Oxide Hydrogen Incorporation Intermediate Electrodes Mo-Doped Zno(ZnO:Mo) Charge Injection Superlattice Thin Films Low Frequency Noise Memory Cell Device Reliability Electrical Stress Channel Width Instability Modes Laser Lift-Off Low Voltage Excellent Stability Optoelectronic Devices Flexible Electronics Metal Interconnects Metal Electrode Aluminum-Doped Vacuum Deposition Cu Ions Heat-Treated Angular Spectrum Memristor Device High Carrier Mobility Indium Zinc Tin Oxide(IZTO) Thermal Annealing Low Driving Voltage Resonant Cavity Si Etching White Oleds Electric Characteristics Ultrathin Film High Density Plasma Combinatorial Approach Surface Energy Film Composition Drain Bias Stress Logic Circuit Thin Structure Ag Film Structural And Optical Properties Final Heat Treatment Tris(8-Hydroxyquinoline) Aluminum(III) Amorphous Zno Doping Concentration Degradation Behavior Zn-In-Sn-O Performance Parameters Cathode And Anode Carbon Nanotubes Patterning Screen Printing Computer Architecture Doped Sno 2 Plasma-Enhanced Chemical Vapor Deposition (Pecvd) Film Formation Emission Structure Transparent Conducting Electrode(TCE) On-State Current Stable Value Performance And Reliability Pulse Duration Printed Carbon Nanotubes Transparent Tft Doping Method Proof-Of-Concept Overall Performance Light Transmission Dominant Mechanism Ultraviolet Laser Graphene Devices Color Rendering Index Efficient Operation Applied Bias Voltage Low Resistance Electrode Super-Resolution Imaging Driven Device Laser Lithography Pre-Reduction Silicon Film Reliable Transfer Areal Capacitance Ferroelectric Field Effect Relative Intensity Gate Driver Hydroxyl Group Disturb-Free Laser Energy Persistent Photoconductivity (Ppc) Metal-Oxide-Metal Stable Characteristics Enhancement-Mode Energetic Bombardment Subwavelength Resolution Good Crystallinity Crystallization Behavior Elastic Film Pressure Distribution Flexible Backplane Metallic Zinc Still Image Diffusion Depth Interconnect Structures Color Stability Emitting Materials Applied Voltage Level Production Diffusion Barrier(DB) Spectral Line Shape Hysteresis Behavior Optimization Methods Laser Irradiation Dielectric Materials Performance Optimization 51 V Coercive Field Titanium Electrodes Density Functional Theory(DFT) Switching Device Key Role Red Phosphorescent Organic Thin-Film Transistors (Otfts) Design Method Case Studies Compensation Effect Thermoelectric Figure Of Merit Low Deposition Temperature Mixed Zone Operational Stability Lift-Off Process Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer Electrode Materials Room Temperature Fabrication Chemical Strengthening High Uniformity Random Orientation Electromotive Force Flexible Circuits Simulation And Fabrication Voltage Pulse K-Doped Overdrive Voltage Heavy Metals Pcm Layer Chromaticity Coordinates Experiment Results White Led Working Pressure Absorption Characteristic Synergetic Effect Ti Film 5 Mol%(MgO) Fine Pitch Effective Channel Length Process-Based Neutral Donor Printing Method High-Capacity Thin Film Electronics Ti Doping Driving Circuit Organic Binder Wavelength Range Dominant Parameter Photo Mask 20th Century Feature Size Hole Transporting Layer Dual Gate(DG) Co-Solvent System Gen 2 Reflective Mode Visible Transmittance Aliasing Error Composition Ratio Optical Modulation Two-Dimensional Image Reconstructed Image Power Spectra Density Scattering Particles Sinx Passivation Table-Top Inorganic Semiconductors Co-Sputtering Method Field-Induced Channel Noise Growth Rate Electric Power Generation Sky Blue Soft Electronics Two-Step Annealing Sputtering Target At Interfaces Transparent Memristor Rigid Materials Scale-Up Small Size Dense Structure N-Channel Energy Storage Channel Potential Dependence Of Threshold Voltage Photo-Generated Holes Spectroscopic Analysis Metal Mesh Flexible Electronic Devices Coupling Conditions Experimental Study Technical Feasibility Accumulation Condition Electron Injection Layer Alternative Cathode Thermoelectric Materials Mechanical Strain Electrolyte Solution Deep Level Total Resistance Tft Technology Human Brain Display Driver Harsh Conditions Temperature Condition Sputtering Atmosphere Blue Dopant Zno Nanocrystalline Films Ambient Light Sheet Resistivity Glass Encapsulation Triplet Exciton Density Of States Mechanism Of Formation Selective Doping Gate Electric Field Long Term Stability Photonic Crystal(PC) Correlated Color Temperature Atomic Force Microscope(AFM) Subwavelength Metallic Gratings Photo-Responsive Light Diffraction Red Phosphorescence Interface Engineering Spectral Absorption Mechanical Durability Hyper-Realistic Etching Damage Mass Production Transparent Substrate Driving Electrode Dark States Improved Thermal Stability Visible Region Trapping Behavior Coupling Enhancement Diffusion Of Ions Out-Coupling White Emitting Heat Generation Memory Effect Hall Measurement 1.5 Um Selective Energy Transfer Operation Method Very Large Scale Integration(VLSI) Si-Based Large-Area Graphene Red Dopant Igzo Target Transistor-Type Light Propagation Structural Parameters Smart Approach High Electron Mobility Transistor(HEMT) Lcd Panel Hologram Reconstruction Electricity Consumption Indium Complex Film Forming Numerical Error Ambient Conditions High Refractive Index Large Numbers Tin Oxide Films High Diffraction Efficiency Graphene Films Temperature Dependence 77.80.-E Low Annealing Temperature Emission Current Density Ion Beam Deposition Plasma Effects Image Hologram X-Ray Photoelectron Spectroscopic Initial Stage Flat Panel Display(FPD) Soft Platforms Stack Structure Blue Fluorescence Tin (Iv) Oxide Surface Characteristics Diffractive Optical Elements Low Sensitivity Barrier Properties Polarization Switching Maximum Diameter Light Emission Xrd Patterns Frequency Variation High-Quality Films Light-Emitting Electrochemical Cells(LECs) Absorption Properties Silicon Oxide E-Beam Evaporation(EBE) Integrated System Poly-Si Film Deposition Rate Host Material Oxide Electronics Pecvd Sinx Phonon Frequencies Stacked Structure Patterned Graphene White Emission Charged Species Operation Characteristics Sub-Pixel External Bias Si Nanoparticles Fermi Energy Level Single Step Required Duration Organic Electronic Devices Low Temperature Heat Instability Phenomena Contact Noise Pixel Density Structure Design Fast Switching Voltage Curve Oxide Layer Computer Generated Holograms(CGH) Time Dependence Single-Input Photo-Polymerization Glass Surface Plasma Damage Retention Time Process Scheme Aligned Nanorods Storage System Cmos Inverter Hard Metal Gate Pulse Shift Register Scattering Parameters(S-parameters) P-Type Oxide Semiconductor Fluorescent Dye Metal Surface Growth And Transfer Phosphorescent Materials Multi-Layered Graphene Building Space Minimal Change Thermal Polymerization In-Zn-Sn-O Amoled Display Thermoelectric Thin Film Tert-Butyl Emissive Layer(EL) Laser Interference Wearable Device Tin-Zinc Human-Machine Interaction(HMI) Cost-Effective Fabrication Amidinate Ligand Igzo Film Poly-Si Thin Film Block Copolymer Oxygen-Rich Negative Bias Illumination Stress(NBIS) Reflection Characteristics Laser Writing Numerical Study Energy Dispersive X-Ray Spectroscopy(EDX) Low Pressure Organic Photovoltaics(OPVs) Binary Pattern Stress-Induced Ultrasonic Methods Light Penetration Light Stability Single Buffer Layer Organic Ferroelectric Materials Oled Degradation Layered Films Photo-Annealing Gst Thin Films Fermi Level Reflected Light Visible Light Illumination Surrounding Environment Spin-Coating Method Normal Process Physical Model Fowler-Nordheim Plots Pulse Amplitude Stretchable Interconnects Thermally Induced Iridium Complexes Thin Film Thermoelectric Trapped Electron(TE) Dual-Functional Superior Performance Direct-Current Magnetron Sputtering Well-Aligned Indium Zinc Oxide Dye Molecules Aging Process Dispersion Factor Long-Run Flat-Band Voltage Etching Behavior Process Development Sequential Lateral Solidification Size Scale Image Data Crystallization Temperature Interfacial Layer Low Electric Field Ab Initio Molecular Dynamic Simulations Circuit Architecture Oxygen Atmosphere Sampling Interval Cathode Electrode Tin-Doped Indium Oxide Ag-Doped Control Layer Electrophosphorescent Devices 2-Dichlorobenzene Tapered Holes Blue-Emitting Fully Depleted(FD) Key Technology Power Integrated Circuits Switching Operation Dc Magnetron Sputtering Method Light Control Device Properties Organic And Inorganic Materials 1-Methoxy-2-Propanol Polymer Materials Transparent Anode Real-World White Light-Emitting Ionized Donors Exponential Distribution Power Law End Functionality Energetic Oxygen Ambient Air Low Transmittance Multi-Component Transparent Conductor Complementary Metal-Oxide-Semiconductor(CMOS) A-Igzo Tfts Self-Assembling Methyl- Plasma Assisted Atomic Layer Deposition(PA-ALD) Voltage Change Plasma Process Triplet Harvesting Radiant Heat T-Type Cubic Phase Quantitative Measurement Hybrid Structure Thermal Treatments Threshold Electric Field Ald Method Turn-On Field Rapid Development Enhanced Performance State Maintenance Optical Contrast Bi-Layer Non-Paraxial Vacuum Annealing Very High Resolution Chemical Bonding State Ionized Physical Vapor Deposition(IPVD) Treatment Method Graphene Layers Green Light Anneal Temperature Energy Consumption Volume Ratio Von Neumann Electron Microscope Amorphous Ingazno Thin Film Continuous Domain Edge Shape Oxygen Vacancy Concentration Blue Oleds Reversible Deposition Cu Electrodes High Electrical Conductivity Ultra-High Density Zinc Oxide Thin Films Interface Trap Low Contact Resistance Liquid Electrolyte Output Characteristics Metal-Doped Encapsulation Layer Practical Use Display System Multi-Band 4-Ethylenedioxythiophene):Poly(4-Styrenesulfonate)(PEDOT:PSS) Pl Intensity Ion Diffusion And Reflection Amplitude-Only Broadband Applications Raman Spectroscopy Organic Transistor Tin(Ii) 2-Ethylhexanoate Solution-Based Synthesis Hydrogen Diffusion Self-Aligned Hall Mobility Rf Power Fabry-Perot Resonance Wide Temperature Range Light Response Low Resistivity Radio Frequency (Rf) Magnetron Sputtering Wet Treatment Electro-Optical Properties(E-O) Continuous Current Active Structure Alumina Film Sputter Deposition Transparent Organic Light-Emitting Diodes Memory Applications Pixel Array Force Microscopy Whole Process Operating Voltage Oxygen Deficient Voltage Scan Chromium Film Successful Implementation New Materials Stable Structure Bulk Growth Key Components Nanocomposite Structure Power-Efficient Connection System Electrolyte Concentration Source/Drain Electrodes Flexible And Transparent Doping Agents Po 2 Single-Layer Polarization Effect 4-Point Probe Technical Challenges Switchable Mirror Model-Based Active Region Band-Gap Energy Halogen Lamp Oxidation State Channel State Information(CSI) Black Dye Input Signal Cu Concentration Stable Output Metal Layer Thermal Oxide High Transmittance Microcrystalline Si Wearable Electronics Spectroscopy Analysis Solvent-Assisted Power-On Phosphorescent Dyes Programming Pulse Pzt Films Thin Film Materials Oxide Gate High Stability Temperature Gradient Anode And Cathode Surface Plasmon(SP) Semiconductor Memory Interface States Fluorescence Emission Phase-Only Modulation Voltage Stress Spatial And Temporal Organic Devices Etch Damage Hot Plate Critical Coupling Modulation Scheme Rotation Angle Thermal-Induced Short Time Oxidizing Atmosphere Pixel Integration Hydrogenated Amorphous Silicon Oxidized State Double-Gate(DG) Short-Range Ordering Defect Density Alloy Thin Film Electron Emission Switching Characteristics Layer Effect Highly Stretchable Novel Material Field Enhancement Factor Growth Per Cycle Two Layers Memory Structure N-Type Doping Conduction Mechanism 4-Vinyl Phenol(Poly) Transparent Conductive Oxide Deposition Optoelectrical Properties Anneal Treatment Energy Levels Wavelength-Selective Dielectric Thickness Operating Characteristics Three-Layered Integrated Electronics Scaling Up Polymerization Method Donor Defects Electrochromic Performance Large Viewing Angle Perfect Absorption And Operation Compositional Ratios Stretchable Displays Current Path Vertical Stacking Galvanostatic Charge/Discharge Cooling And Heating Plasma Oxidation Amplitude And Phase Information And Logic Amorphous Phase Conventional Devices Dye-Doped Electrical Contact Toluene Solvent Numerical Simulations Film Structure Bias Temperature Instabilities 3d Object Oxide Thickness Diffraction Grating Polyimide Substrate Electronic Product Single-Sided Lamination Process Surface-Modified Si Film Thickness Stretchable Electrode Charge Storage Power Ratio Main Current Cooling Solution Erasing And Rewriting Active Protection Current-Voltage (I-V) Characteristics Pentacene Thin-Film Transistors Injection Barrier Coupled With Staggered Structure Layer Composition Photo Resist Voltage Drop Life Time Elastomeric Substrate Orders Of Magnitude Top Electrode New Approach Polarizer-Free Coplanar Structure Electrical Characterization Electronic Holography Artificial Intelligence Electronic Circuit Density Of Trap States Electrochromic Supercapacitor Stacked Oled Covalent Bonding Reflection-Type High Mobility Transistor Information And Communication Cyclic Operation Ga Content Sno2 Nanoparticles Optical Encryption Deposition Process Reflection Mode High-Speed Operation Device Design Electrochromic Behavior Precursor Solution Dynamic Bias Ac Bias Absorption Features Atomic Diffusion Thermoelectric Generator(TEG) Chemical Treatment Metal Source/Drain(S/D) Transmission Line Model Emission Characteristics Semiconductor Thin-Film Transistor Defects Formation Passive Type Emotional Experience Electrical Signal Electron Microscopy Analysis Leakage Current Density Flexible Oxide Thin-Film Transistors Inductively-Coupled Plasma(ICP) Sampling And Interpolation Nonvolatile Ferroelectric Memory Surface Composition Polymerization Reaction Stability And Performance Ferroelectric Nature Spherically Symmetric Helicon Plasma Excimer Laser Annealing Charge Movement Sampling Number Remote Phonon Scattering Ti Thin Film Free Space Active Metasurface 1/F Noise Field Propagation Negative Electrodes Uniformly Distributed Trapping Effects Low Oxygen Co. Kgaa Low Processing Cost Ring Oscillator Zn Oxide Light Waves Narrow Channel Semi-Transparent Red Light Screen-Printed Absorption Profile Off-Axis Blue Devices Optimum Thickness Blue Emission Metal Oxide Thin Films Earth-Abundant Materials Xrd Measurements High Potential Liquid Crystal Device Zno Semiconductor Information Recording Color Gamut Oscillating Frequency High Power Low Temperature Processing Ag Deposition Effect Of Deposition Optical Transparency Zinc-Doped Fourier Space Spatial Frequency Image Generation Polycrystalline Silicon Thin-Film Transistor Flexible Thin Film Transistors Carbon Dioxide P-Type Tin Oxide Scaling Behavior Interface Formation Deformable Interconnects Vacuum Packaging Heat Treatment Process Rolled-Up Improved Stability High Electrical Performance Reflection Structure Depletion-Mode Plasma Sputtering Negative Voltage Cell Structure Oxygen Plasma Treatment X-Ray Diffraction Pattern Lossy Dielectric Layer Adhesion Properties Square Wave Direct Deposition Oxygen Gas Pedot:Pss Layer Annealing Time Wide Band Gap Semiconductor Diodes Sonochemical Method Propylene Carbonate Space Cooling Nanocomposite Thin Films Under-Sampling Sputtering Process Subthreshold Current Reconstruction Of Hologram Steep Slope Improved Efficiency Charging Current Crack-Free Propylene Glycol Electron Transporting Layer Sensor Sensitivity Low Leakage Current Amorphous-Like Doping Density Flexible Nonvolatile Memory Films Properties Switching Speed Spin Casting Self-Limiting High-Purity Arc Discharge Technical Barrier Surface Contamination Power Spectral Density(PSD) Transparent Oxide Semiconductor Effect Of Oxygen Compact Size Measurement System Subgap States Cross-Talk High-Speed Interface Mechanical Surface Treatment Current Noise Surface Layer Insulator Layer Cnt Films In-Zn-O Bottom Electrode Modulation Characteristic Electrically Controlled Birefringence Patterning Method Operating Current Density Instability Mechanism Top-Gate Structure Off-State Stress Atomic Composition Temperature Annealing Sputtering Pressure Nondestructive Readout Operation Oxidizing Agent Device Configuration Ag Thin Film Critical Damage Holography System Device Failure Focused Analysis Electrochromic Switching Contact Configuration Formation Process Tio2 Nanoparticles Working Gas Low Drain Voltage Lightly Doped Drain(LDD) Electronic Systems And Physical Properties Graphene-Metal Electrochemical Property Near-Field More Or Less Level Shifter Breakdown Field Voltage Inverter Reduced Mobility Ohmic Contact Resistance Luminous Efficiency Doped Oxide Chemical Vapor Deposited Cathode Ray Tube As Doping Wrinkled Surface Interface Roughness Charge Barrier Annealing Atmosphere Conductive Paths Electrochemical Reaction(ECR) Sensing Film Device Degradation Naked Eye Static Current Flexible Oled Z Axis Programming Characteristics