ETRI-Knowledge Sharing Plaform

Channel Length Gate Bias P-Type Subthreshold Swing(SS) Drain Bias Oxide Semiconductor Contact Resistance(73.40.Cg) Heterojunction Structure Injection Control Ultra-Thin Atomic Layer Deposition Driving Current Electron Injection Flexible Electrochromic Devices High Performance Key Performance Zinc Tin Oxide Oxide Material Turn-On Voltage Threshold Voltage(Vth) Redox Reaction Room-Temperature Flexible Display Gate Dielectric High-K Capacitor Metal-Oxide(MOX) Performance Metrics On/Off Current Ratio Oxide Thin-Film Transistors Sampling Time(Ts) And Gate Al-Doped Band Structure Deep Submicron Metal Layer Self-Aligned New Method Bottom Gate Channel Layer Semiconductor Heterojunction Oxide Layer Amorphous Indium-Gallium-Zinc Oxide(a-IGZO) Drain-Induced Barrier Lowering(DIBL) Indium Oxide Sheet Resistance Complementary Logic Gates Electrical Characteristics High Transparency Indium Tin Oxide(ITO) 1T-1C DRAM Top Contact Configuration Electron Transfer Intense Pulsed Light Large Area