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Jeong Junhyung

Department: RF/Power Components Research Section

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KSP Keywords: Die-Attach Recess Depth Rf Performance Algan/Gan Hemts Gate Recess High-Electron Mobility Transistor(HEMT) Packaging Processes Interface Trap Depth-Dependent Trade-Off Thermal Stress Drain Leakage Current

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논문 검색결과
Type	Year	Title	Cited	Download
Journal	2025	Gate Recess Depth-Dependent Performance Variations in AlGaN/GaN HEMTs Induced by Packaging Junhyung Kim Electronics Letters, v.61, no.1, pp.1-4	0

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