ETRI-Knowledge Sharing Plaform

Rf Performance Algan/Gan Hemts T-Gate Cut-Off Frequency High-Electron Mobility Transistor(HEMT) Protection Layer Electrical Properties Gate Recess Organic Chemical Device Fabrication Chemical Vapor Deposition Parasitic Capacitance Dc Characteristics Gate Electrode Ohmic Contact Formation Performance Improvement Packaging Processes Hexagonal Boron Nitride(hBN) Ohmic Contact Resistance Interface Trap Depth-Dependent Trade-Off Transport Mechanism Thermal Stress Recess Depth Double-Deck Head Position Maximum Oscillation Frequency Gan-Based Drain Leakage Current Passivation Layer Die-Attach Current Gain Thermal Transport