ETRI-Knowledge Sharing Plaform

Rf Performance Algan/Gan Hemts High-Electron Mobility Transistor(HEMT) Cut-Off Frequency T-Gate Protection Layer Electrical Properties Gate Recess Organic Chemical Device Fabrication Chemical Vapor Deposition Parasitic Capacitance Dc Characteristics Gate Electrode Ohmic Contact Formation Performance Improvement Hexagonal Boron Nitride(hBN) Packaging Processes Ka-Band Ohmic Contact Resistance Interface Trap Depth-Dependent Trade-Off Transport Mechanism Thermal Stress Recess Depth Double-Deck Head Position Maximum Oscillation Frequency Gan-Based Drain Leakage Current Passivation Layer Die-Attach Current Gain Thermal Transport