ETRI-Knowledge Sharing Plaform

Power Amplifiers(PAs) Microwave Monolithic Integrated Circuits(MMIC) Microwave Integrated Circuit Components Technology Compound Semiconductor T-Gate Pseudomorphic High Electron Mobility Transistor(pHEMT) High Power Amplifier(HPA) Mmic Power Amplifier Recessed Gate Algaas/Ingaas/Gaas Phemts Power Amplifier Mmic Gaas Mmic Low Temperature Cofired Ceramic(LTCC) Gan Hemt Technology Cut-Off Frequency Frequency Range Comparative Study 5 Ghz Parasitic Capacitance Solid State Power Amplifier Gate Shape High Performance K-Band Plasma-Induced Damage X-Band Ceramic Technology Pre-Passivation Passivation Layer Input And Output Ku-Band Algan/Gan Hemts Device Characteristics Device Performance Power Device Rf Performance Wireless Personal Area Network(WPAN) Silicon Nitride 5g Base Station Gan Hpa Microwave Characteristics Coupled Microstrip Line Three-Stage Amplifier Etching Method Ka Band Satellite Matching Network On-Chip Power Added Efficiency(PAE) Rf Isolation Resistance Measurement Satellite Payload Surface Layer Third-Order Intercept Point Asynchronous Processor Base Station Applications Bias Circuit Branch-Line Coupler Directional Coupler(DC) Ghz Band High Rate Output Impedance Next-Generation Rf Characteristics Small Signal Gain Stage Structure Silicon Carbide(3C-SiC) Two-Step Techno-Economic Analysis Wilkinson Power Divider X-Ray Photoelectron Spectroscopy Unconditional Stability 6 Ghz Applied Physics Buffer Amplifier Drain Current Microstrip Coupled Line Open Stub National Defense Network Applications Plasma Ashing Shunt Capacitors Technology Infrastructure T-Shaped Gate Cross-Sectional Area(CSA) And Gate Auger Electron Spectroscopy Biasing Circuit Gaas Process Fabrication Technology Gallium Nitride (Gan) Infrastructure Support Platform Development Stable Structure Sensor Node Wet And Dry Etching Ultralow Power(ULP) Gan Power Amplifier Cascode Mixer Design And Implementation E-Beam Lithography Gan On Silicon Head Size Operation Condition Open Technology Reference Surface Sin X Scattering Parameters(S-parameters) Side-Wall Wet Etching 5.8 Ghz Yield Enhancement Adaptive Biasing Back-Off Band Power Conversion Gain Down-Conversion High Linearity Gan-Based Gan Hemt Modeling Gate Length Maximum Oscillation Frequency Microwave Frequencies Output Power Control Process Technology Optical Communications Passive Components Rf Choke Sheet Resistance Wlan Applications Wideband Operation Ubiquitous Computing Environment Communication System Class-F C-Band Experimental Study Gate Recess Gan Hmet High Isolation High Efficiency Power Amplifier Low Noise Amplifier (Lna) Maximum Frequency On-Wafer Nitride Layer Reactive Ion Etching(RIE) Rf Detector Saturated Output Power Single Supply 60ghz Communication Anisotropic Etching Drain Voltage Enhancement-Mode Frequency Band Fifth Generation(5G) Intelligent Vehicle Lithography Process Metal-Insulator-Metal (Mim) Capacitor Plasma-Enhanced Chemical Vapor Deposition (Pecvd) Return Loss(RL) Stability Improvement Stability Parameter Surface Treatments 2.4 Ghz 28 Ghz