ETRI-Knowledge Sharing Plaform

Power Amplifiers(PAs) Microwave Monolithic Integrated Circuits(MMIC) Microwave Integrated Circuit Components Technology Compound Semiconductor T-Gate Pseudomorphic High Electron Mobility Transistor(pHEMT) High Power Amplifier(HPA) Mmic Power Amplifier Recessed Gate Algaas/Ingaas/Gaas Phemts Power Amplifier Mmic Gaas Mmic Low Temperature Cofired Ceramic(LTCC) Gan Hemt Technology Frequency Range Comparative Study Cut-Off Frequency Coupled Microstrip Line 5 Ghz Parasitic Capacitance Solid State Power Amplifier Gate Shape High Performance K-Band X-Band Plasma-Induced Damage Ceramic Technology Passivation Layer Pre-Passivation Input And Output Ku-Band Algan/Gan Hemts Device Characteristics Device Performance Power Device Rf Performance Wireless Personal Area Network(WPAN) 5g Base Station Silicon Nitride Gan Hpa Microwave Characteristics Ka Band Satellite Matching Network Etching Method On-Chip Third-Order Intercept Point Three-Stage Amplifier Power Added Efficiency(PAE) Rf Isolation Resistance Measurement Surface Layer Satellite Payload Ghz Band High Rate Asynchronous Processor Bias Circuit Branch-Line Coupler Base Station Applications Directional Coupler(DC) Next-Generation Output Impedance Wilkinson Power Divider 6 Ghz Two-Step X-Ray Photoelectron Spectroscopy Rf Characteristics Silicon Carbide(3C-SiC) Techno-Economic Analysis Unconditional Stability Small Signal Gain Stage Structure Applied Physics Buffer Amplifier Cross-Sectional Area(CSA) Drain Current Microstrip Coupled Line National Defense Network Applications Open Stub T-Shaped Gate Shunt Capacitors Plasma Ashing Technology Infrastructure Fabrication Technology Gaas Process Gallium Nitride (Gan) Gan Power Amplifier Infrastructure Support And Gate Auger Electron Spectroscopy Biasing Circuit Wet And Dry Etching Sensor Node Platform Development Ultralow Power(ULP) Stable Structure Gan On Silicon Head Size Cascode Mixer Design And Implementation E-Beam Lithography Open Technology Yield Enhancement Operation Condition Wet Etching 5.8 Ghz Reference Surface Sin X Scattering Parameters(S-parameters) Side-Wall Gan-Based Gan Hemt Modeling Gate Length High Linearity Maximum Oscillation Frequency Adaptive Biasing Back-Off Band Power Down-Conversion Microwave Frequencies Optical Communications Output Power Control Wideband Operation Wlan Applications Conversion Gain Process Technology Passive Components Rf Choke Ubiquitous Computing Environment Sheet Resistance Gate Recess Gan Hmet High Isolation High Efficiency Power Amplifier Low Noise Amplifier (Lna) Class-F Communication System C-Band Maximum Frequency Nitride Layer On-Wafer Experimental Study 60ghz Communication Rf Detector Reactive Ion Etching(RIE) Saturated Output Power Single Supply Frequency Band Fifth Generation(5G) Intelligent Vehicle Lithography Process Anisotropic Etching Drain Voltage Enhancement-Mode Metal-Insulator-Metal (Mim) Capacitor 2.4 Ghz 28 Ghz Plasma-Enhanced Chemical Vapor Deposition (Pecvd) Return Loss(RL) Surface Treatments Stability Improvement Stability Parameter