BROWSE
Researchers
Detail
Park Jongyul
- Department
- RF/Power Components Research Section
- Contact
- KSP Keywords
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
|
Journal
|
2024 | The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors Junhyung Kim ELECTRONICS, v.13, no.20, pp.1-8 | 0 | |
|
Conference
|
2024 | GaAs mHEMT Technology Achieving a High Cut-off Frequncy of 446 GHz with a Gate Length of 75 nm Jong Yul Park International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1-2 | ||
|
Conference
|
2024 | 0.15 ㎛ GaN HPA MMIC for 6G Upper-mid Band Junhyung Jeong International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1456-1457 | ||
|
Conference
|
2024 | Enhancing Ohmic Contacts in GaN HEMT through Optimization of Ramp-up Rate in Annealing Process Junhyung Kim International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1104-1105 | ||
|
Conference
|
2024 | GaN HEMT 소자의 게이트 열처리 공정 유무에 따른 DC 특성 분석 김준형 한국전자파학회 종합 학술 대회 (하계) 2024, pp.693-693 |