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KOREAN

Researchers

연구자 검색
Keyword

Detail

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Park Jongyul
Department
RF/Power Components Research Section
Contact
KSP Keywords
논문 검색결과
Type Year Title Cited Download
Conference
2024 GaAs mHEMT Technology Achieving a High Cut-off Frequncy of 446 GHz with a Gate Length of 75 nm   Jong Yul Park   International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1-2
Journal
2024 The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors   Junhyung Kim   ELECTRONICS, v.13, no.20, pp.1-8 0
Conference
2024 Enhancing Ohmic Contacts in GaN HEMT through Optimization of Ramp-up Rate in Annealing Process   Junhyung Kim   International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1104-1105
Conference
2024 0.15 ㎛ GaN HPA MMIC for 6G Upper-mid Band   Junhyung Jeong   International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1456-1457
Conference
2024 GaN HEMT 소자의 게이트 열처리 공정 유무에 따른 DC 특성 분석   김준형   한국전자파학회 종합 학술 대회 (하계) 2024, pp.693-693