ETRI-Knowledge Sharing Plaform

High Electron Mobility Transistor(HEMT) Gan-Based Algan/Gan Hemts Sige Hbt 94 Ghz Compound Semiconductor Components Technology Down-Conversion Mixer Rf Isolation Lc Voltage Controlled Oscillator(LC-VCO) Conversion Gain 6 Ghz Supply Voltage Field Plate Matching Circuit Metal-Insulator-Semiconductor(MIS) Low Noise Amplifier(LNA) Mim Capacitor Device Performance Sige Bicmos Technology Gate Length Algan/Gan Heterostructure Silicon-Germanium(SiGe) 5 Nm Noise Figure(NF) Off-State Leakage T-Shaped Gate Fabrication Process Frequency Synthesizer Head Size 5.8 Ghz Microwave Integrated Circuit Microwave Monolithic Integrated Circuits(MMIC) Optical Communications Power Amplifiers(PAs) Sic Substrate Fully Integrated Schottky Barrier Diode(SBD) Two-Dimensional Electron Gas(2DEG) Enhancement-Mode Electrical Properties(I-V curve) On-Chip Dry Etching Power Consumption Next-Generation Gate Width Up-Conversion Mixer Threshold Voltage Shift Quality-Factor(Q-factor) High Performance Small Signal Gain Lc Tank Back Barrier Gate Dielectric Drain Current National Defense Smart Lighting Dc Characteristics Sensor Node Platform Development 7 Mm High Temperature Device Characteristics T-Gate Frequency Range Light Sources Maximum Oscillation Frequency Epitaxial Layer On-Board Equipment Thermal Behavior Heterojunction Bipolar Transistors(HBTs) Low Phase Noise Nitride Layer Sige Film Thin Film Resistor Active Baluns X-Band Applications Gate Insulator Carrier Mobility Proton Irradiation Phase Locked Loop(PLL) Single Chip Silicon Nitride Cross-Coupled Pair Dielectric Layer 2.4 Ghz Radiation Hardness Wide Tuning Range Current Consumption Complementary Metal-Oxide-Semiconductor(CMOS) Strained-Si Scattering Parameters(S-parameters) Structure-Related Silicon Substrate Gate Capacitance Integer-N Memory Device Gate Resistance Si-Based Total Ionizing Dose Effects Gate Recess Power Conversion Low Frequency Noise 2 Mm Dual-Channel Thermal Noise Spiral Inductor P-Type High Power Density Wideband Matching Control Range Gan Heterostructures Sige Bicmos Process Temperature Effect Self-Heating Effect(SHE) Frequency Band Si Substrate Stress Measurement Dc Power Semiconductor Technology 30 Ghz Power Hemt XG-PON1 Model Parameter S-Band Dc Measurements Threading Dislocations(TDs) Ghz Vco Proton Radiation 10 Ghz Gate Leakage Current Flicker Noise(1/f) Plate Structure Cmos Process Technology Measurement Data Dedicated Short-Range Communication(DSRC) Cutoff Frequency And Gate Rf Power Cvd Diamond Reset Current Equivalent Circuit Model(ECM) Etching Conditions Sige Alloy Input And Output Via-Hole Power Characteristics Chip Area Radiation Tolerance Normally-Off Channel Layer Device Properties Fully Differential Bottom Electrode Passivation Thickness Algan/Gan-On-Si Side Gate Atomic Composition Frequency-Modulation(FM) Contact Size Process Conditions Gain Compression W-Band Concurrent Dual-Band Linear Energy Transfer Mixed-Mode Stress True-Time Delay Millimetre-Wave Measurement Results Bias Current High Gain Mobility Behavior Inductively Coupled Plasma Etching Third-Order Intercept Point Cross-Coupled Lc Vco Signal Characteristics Size Dependence Heterostructure Field Effect Transistors Temperature And Pressure Device Degradation Optical Receiver Gain Flatness Threading Dislocation Density MOS-HEMT Power Levels Square Wave Gigabit-Capable Passive Optical Network Design And Fabrication Growth Pressure 70 Ghz Oxidation Of Silicon Transmission Gate(TG) Resonance Frequency Satellite Communication System Solid State Power Amplifier Hysteresis Phenomenon Wide Band Gap Design Evaluation Degradation Mechanism Parasitic Capacitance Channel Structure In-Situ Annealing Power Gain Phase Change Material(PCM) Selective Epitaxial Growth(SEG) Wafer Level Packaging Wafer Bonding Switching Speed Detection Circuit Novel Method Capacitive Coupling Petri Net(PN) Parasitic Components Uwb System Data Stream Uwb Applications Front Side Four-Band Electrical Resistivity High Figure Of Merit Treatment Process Medium Power Amplifier Trapping Effects Etch Depth Bias Point High-Speed Devices 130-Nm Sige Bicmos Reflection Coefficient Radio Frequency (Rf) Performance Optimum Thickness Asynchronous Processor Two-Stage Noise Level Loop Bandwidth Multi-Mode High Sensitivity Gate Bias Stress Simulation And Measurement Low-Rate Mmic Power Amplifier Dynamic Performance Recessed Gate Plasma-Enhanced Chemical Vapor Deposition(PECVD) Sige Epitaxial Growth Global Optimization Lattice Temperature Silicon Heterojunction Bias Circuit Local Oscillator Depletion-Mode Atomic Layer Deposition Radiation Resistance 60 Ghz Band 250 Mhz Network Analyzer Mos Transistor Non-Volatile Memory(NVM) Parallel-Plate Initialization Vector(IV) Chirp Modulation Driver Amplifier Data Rate Semiconductor Heterostructure Radio Link Ultra-Wideband System Cross-Coupled Differential Vco Structure Optimization Silicon Carbide(3C-SiC) Optimum Distance Reduced Pressure Chemical Vapor Deposition High Signal Oxidation Process Avalanche Multiplication Higher Frequency Gas Channel Buffer Structure Open Stub Frequency Source Lumped Elements Gallium Arsenide(GaAs) Lithography Technology Gan Hemt Devices Nano-Device Gas Reduction Experimental Data Trapped Charge Gate Foot Cost-Effective S-Parameter Extraction Length Scaling Room-Temperature Electron Confinement Etching Technique 2-D Electron Gas Diode Parameters Noise Upconversion Thermal Stability(TGA) Situ Doping Polished Si Applied Physics High-Resolution Layer Composition Microstrip Line Top Electrode Phase Noise Reduction High Breakdown Voltage Passivation Layer Subthreshold Slope(SS) Scanning Electron Microscopy(S.E.M.) Carrier Frequency Power Combiner Simplified Circuit Model Etching Rate Differential Current Emitter Layer Telecommunication System Lattice Constants Co-Integration Diamond Substrate 6 Mhz Frequency Error(FE) Bottom Plate Local Oxidation Ultralow Power(ULP) 200 Ghz On/Off Current Ratio Ku-Band Gan Hemt Technology Output Matching Wide Temperature Range Lattice Matched Saturation Velocity Current-Voltage Measurements Gallium Nitride (Gan) Multi-Purpose Resistance Change Electron Trapping Model And Simulation Total Current Early Effect Signal Power Reference Frequency Chemical Mechanical Polishing(CMP) Quasi-Saturation Metal Layer Si Wafer Schottky Barrier Height Compressive Stress Intelligent Greenhouse LOW POWER AND HIGH SPEED Signal Detection Communication Applications Structure Analysis Plasma Process Silicon-Based Thin Films Barrier Layers Gan Power Amplifier I-V Measurement Surface Roughness De-Embedding Molybdenum-Copper Active Element Double-Balanced Mixer Heating Layers Technical Development Ion Implantation Frequency Modulated Continuous Wave (Fmcw) Radar Multi-Band Sin Passivation New Method Tail Current Device Applications Divide-By-2 Charging Time Low Sheet Resistance Large-Scale Growth Temperature Fast Settling Operating Frequency Burst Detection Capacitor Array Fluorine Ions Millimeter-Wave Applications F Max Low-Power Cmos Ge-Based Negative Feedback Recess Gate Oscillation Amplitude High Resistivity E-Beam Lithography Lossy Transmission Line High Speed Communication Si Devices Carbon-Doped Phase Transition Base Layer Cascode Mixer Radiation Effects Quantum Channel Radar System Phase Compensation Performance Degradation Ic Reliability Optimum Length Autonomous Driving Si Layer Rf Applications High Carrier Concentration Wide Dynamic Range(WDR) Intermediate Frequency N-Type Si Frequency Hopping Physical Model Wireless Personal Area Network(WPAN) Common-Mode(CM) Short-Channel Effects Ammonium Hydroxide Gan-On-Sic Hemt Wideband Operation Doped Silicon Frequency Variation Sin Deposition Gaas Phemt Device Size Reference Device High Voltage Operation 18 Ghz Band Power P-N Heterojunction Highly Doped Burst-Mode Receivers(Rx's) Mechanical Stress High Mobility Sige Source Chalcogenide Alloys Dc Current Current Density Wlan Applications Small Form Factor Millimeter-Wave Band Temperature-Dependent Input Matching Direct Current Characteristics Double Plasma Heterogeneous Integration C-Doped Rf Receiver S-Parameter Measurement 60ghz Communication 15 Ghz ITU-T Tensile Stress State Performance Deterioration Mechanism Output Power Density Hetero-Interface High Power Applications Temperature Dependence Pll Synthesizer Si Semiconductor Reactive Ion Etching(RIE) Cross-Coupled Vco Power Amplifier Mmic Two-Dimensional Simulation Proximity Sensor Industry Standard Decoupling Capacitor Bit-Error-Rate(BER) Plasma Etching Process Recess Depth Resistance Variation Current-Steering Stable Process Gan Fet Signal Modeling High Power Devices Thermal Conductivity Low Energy Displacement Damage Key Role Fan-Out Computer-Aided Design Current Collapse Packaging Technology Temperature-Controlled Saturated Output Power High-Frequency Applications Frequency Properties Sige Virtual Substrates Bias Voltage Competitive Power Technology Trends Recess Etch Control Device Sapphire Substrates Sige Device Trans Conductance Rf Transmitter Fluoride-Based Plasma Treatment Thermal Effects Charging Effects Intelligent Vehicle Second Metal Joule Heating Interface Circuit 2.3 Ghz Simulation Results Radio Frequency Characteristics Current Direction Gan Buffer Layer Ac Parameters Drain Voltage Performance Deterioration Ideality Factor Growth Conditions Thermoelectric Device Layer Growth Channel Length Strain Relief Misfit Dislocation Optical Devices Relaxed Sige Loop-Filter(LF) Pulse Width Tmah Etching Transistor Devices Current-Voltage Characteristics Microwave Characteristics High Resistance Differential Pair Cycling Endurance Surface Treatments Air-Bridge High Power Performance