ETRI-Knowledge Sharing Plaform

Power Amplifiers(PAs) High Electron Mobility Transistor(HEMT) High Power Amplifier(HPA) Power Amplifier Mmic Ku-Band Gan-Based Microwave Monolithic Integrated Circuits(MMIC) Microwave Integrated Circuit On-Chip Frequency Range Power Added Efficiency(PAE) Gan Hpa Output Power Density Device Performance Bias Circuit High Output Power Gallium Nitride (Gan) Ka-Band Radiation Hardness Two-Stage Silicon Carbide(3C-SiC) Metal-Insulator-Semiconductor(MIS) Microwave Switch High Efficiency Head Size T-Gate Switch Matrix Gaas Phemt Gate Insulator Carrier Mobility Proton Irradiation Saturated Output Power Drain Voltage 3.5 Ghz Return Loss(RL) Mmic Power Amplifier Measurement Results Temperature Variations Solid State Power Amplifier Spst Switch Driver Amplifier Threshold Voltage Shift Three-Stage Proton Radiation Continuous Wave(CW) Multiple Input Multiple Output(MIMO) 5 Nm T/R Module Voltage Variation Satellite Applications Input And Output Biasing Circuit Compensation Technique Active Bias Device Properties Off Isolation Process-Voltage-Temperature(PVT) Radiation Tolerance Gate Capacitance Impedance Matching Band Power Chip Compensation Coupler Design Sige Bicmos Technology C-Band Total Ionizing Dose Effects X-Band Applications High Speed Wideband Code Division Multiple Access(WCDMA) Stress Measurement Fet Switch Hysteresis Phenomenon Linear Energy Transfer Matching Network Distributed Antenna Systems(DAS) Bias Scheme Compact Size Control Functions Degradation Mechanism Duty Cycle(DC) Device Degradation Mobility Behavior Multi-Input 38 Ghz Power Levels Satellite Communication System Sige Power Amplifier(SiGe PA) Satellite Payload Gate Bias Stress Gate Width Gain Control High Performance Initialization Vector(IV) Low Insertion Loss Band 3 Compensation Circuit Output Impedance Waveguide Transition 6 Ghz Power Stage Phased Array Radar System Plasma Treatment Radiation Resistance Radio Frequency (Rf) Performance Switching Time Small Signal Gain Small Area S-Band Serial-To-Parallel Converter Fabrication Process Gate Dielectric Gas Reduction Gaas Hemt Gate Threshold Voltage Low Temperature Cofired Ceramic(LTCC) Mhz Bandwidth Average Power Base Station(BS) Drain Current Digital Attenuator Subthreshold Slope(SS) Trapped Charge Passivation Layer Gan Hemt Technology Gan Power Amplifier I-V Measurement Input/Output Matching And Gate Bias Technology Current-Voltage Measurements Compressive Stress Doherty Amplifier Enhanced Performance Electron Trapping Equivalent Circuit Model(ECM) Multi-Function Mmic One-Stage 3rd Order Power Usage Fluorine Ions Chip Area Charging Time Channel Layer Device Characteristics Doherty Power Amplifier(DPA) Multi-Output Sin Passivation Phased Array Antenna Performance Degradation Phase Compensation Power Characteristics Radiation Effects Recess Gate 5g Cellular Communications Switch Configuration Heterojunction Bipolar Transistors(HBTs) High Linearity Linearization Techniques Lange Coupler Mobile Handset Adaptive Bias Back-Off Compact Design Dual-Band Direct Current(DC) Dc Current Mechanical Stress Wlan Applications 3.5 Mm Thermal Runaway Port Impedance Peaking Amplifier Power Combining Gate Resistance Hetero-Interface Current Collapse Displacement Damage Design And Test Digital Phase Shifter Deterioration Mechanism 15 Ghz Si-Based 2 Mm High Power Devices Tensile Stress Two-Tone Thin Film Resistor Frequency Band Frequency Properties Gaas Wafer Active Antenna System Charging Effects Class Ab(CAB) Center Frequency Dielectric Layer Multi-Beam Enhancement-Mode 28 Ghz Two-Dimensional Electron Gas(2DEG) Pulse Width Performance Deterioration Up-Converter Supply Voltage