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Journal
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2025 |
Demonstration of GaN-Based HEMTs Using Extremely Thin h-BN Passivation Layer and Air Spacer for the RF Performance Improvement
Sung-Jae Chang
Advanced Electronic Materials, v.11, no.20, pp.1-10 |
0 |
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Conference
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2025 |
Low Noise Amplifier MMIC Design for ISAC Using 0.2 um GaN HEMT Technology
YounSub Noh
International Conference on Information and Communication Technology Convergence (ICTC) 2025, pp.713-714 |
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Conference
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2025 |
X-band 35W High Efficiency Power Amplifier MMIC Design using WAVICE 0.2um GaN Process
노윤섭
한국전자파학회 종합 학술 대회 (하계) 2025, pp.1-1 |
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Conference
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2025 |
Compact X-band 30W Power Amplifier MMIC using 0.2 um GaN HEMT Technology
YounSub Noh
International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2025, pp.1440-1442 |
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Journal
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2025 |
Development of X-Band Receiver LNA and Switch MMICs using Wavice’s 0.2μm GaN Technology
노윤섭
한국전자파학회 논문지, v.36, no.6, pp.605-608 |
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Journal
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2025 |
X-Band GaN Front-End MMIC for Radar Applications
노윤섭
한국전자파학회 논문지, v.36, no.4, pp.424-427 |
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Journal
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2024 |
Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN highelectron-mobility transistors for X-band applications
Sung-Jae Chang
ETRI Journal, v.46, no.6, pp.1090-1102 |
4 |
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Conference
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2024 |
Employment of 3 nm-thick h-BN passivation layer for RF performance improvement in GaN-based HEMTs
Sung-Jae Chang
International Workshop on Nitride Semiconductors (IWN) 2024, pp.1-2 |
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Conference
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2024 |
X-band GaN Power Amplifier MMIC Design and Radiation Evaluations for Space Applications
YounSub Noh
International Conference on Consumer Electronics (ICCE) 2024 : Asia, pp.842-844 |
1 |
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Conference
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2024 |
High Efficiency 10W GaN Power Amplifier for Ku-band Satellite and Radar Applications
Younsub Noh
International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2024, pp.1-2 |
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Conference
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2024 |
Impact of T-gate head size on the device performance and radiation tolerance in LG = 0.15 m GaN-based HEMTs
S.-J. Chang
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2024, pp.283-283 |
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Conference
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2024 |
GaN Power Amplifier MMIC for X-band Satellite Applications and Evaluation with Heavy Ion Irradiation
노윤섭
한국전자파학회 종합 학술 대회 (동계) 2024, pp.185-185 |
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Conference
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2024 |
The Impact of T-Gate Head Size on Radiation Tolerance in GaN HEMTs
Sung-Jae Chang
한국반도체 학술대회 (KCS) 2024, pp.397-397 |
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Conference
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2023 |
A Study on the GaN SPDT Switch MMIC for X-band Satellite Applications
노윤섭
한국통신학회 종합 학술 발표회 (추계) 2023, pp.1-1 |
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Conference
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2023 |
Impact of Parasitic Gate Capacitance on RF Performance in GaN-based HEMTs for X-band Applications
Sung-Jae Chang
The Electrochemical Society (ECS) Meeting 2023, pp.1-1 |
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Conference
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2023 |
Ku-Band 35W Power Amplifier MMIC Using 0.15 µm GaN HEMT Technology
Youn Sub Noh
PhotonIcs and Electromagnetics Research Symposium (PIERS) 2023, pp.794-797 |
2 |
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Conference
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2023 |
Threshold Voltage Shift Mechanisms Induced by γ-ray and Proton Irradiation in GaN-based MIS-HEMTS for Satellite Communication System
Sung-Jae Chang
한국통신학회 종합 학술 발표회 (하계) 2023, pp.1-3 |
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Journal
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2023 |
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
Sung-Jae Chang
Nanomaterials, v.13, no.5, pp.1-13 |
2 |
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Conference
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2022 |
Mechanisms of Device Degradation Induced by Proton Irradiation in the GaN-based MIS-HEMTs
Sung-Jae Chang
International Conference on Accelerators and Beam Utilizations (ICABU) 2022, pp.45-45 |
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Conference
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2022 |
Research on X-band GaN Low Noise Amplifier MMIC
노윤섭
한국전자파학회 종합 학술 대회 (하계) 2022, pp.764-764 |
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Conference
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2022 |
Impact of T-Gate Head Size on Frequency Properties in GaN-based HEMTs
Sung-Jae Chang
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022, pp.1-1 |
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Conference
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2022 |
X-band 25W GaN Power Amplifier MMIC Development
노윤섭
통신 정보 합동 학술 대회 (JCCI) 2022, pp.1-1 |
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Conference
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2022 |
Ku-band SPDT Switch MMIC Design Using 0.2um GaN HEMT Process
노윤섭
한국전자파학회 종합 학술 대회 (동계) 2022, pp.354-354 |
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Conference
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2021 |
A Study on the Ku band GaN Low Noise Amplifier MMIC Design
노윤섭
한국통신학회 종합 학술 대회 (추계) 2021, pp.1-1 |
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Conference
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2021 |
An Equivalent Circuit Model of Thin Film Resistor for MMICs
이상흥
한국전자파학회 학술 대회 (추계) 2021, pp.102-102 |
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Conference
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2021 |
C-band GaN Low Noise Amplifier MMIC Design
노윤섭
한국전자파학회 종합 학술 대회 (하계) 2021, pp.795-795 |
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Conference
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2021 |
X-band 20W High-Power SPDT MMIC Switch Design by Using ETRI GaN Process
노윤섭
대한전자공학회 학술 대회 (하계) 2021, pp.2268-2270 |
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Conference
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2021 |
X-band 20W Power Amplifier MMIC Developement Using 0.2um GaH HEMT Process
노윤섭
통신 정보 합동 학술 대회 (JCCI) 2021, pp.1-1 |
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Conference
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2021 |
Broadband SPDT Switch MMIC Development Using 0.2um GaN HEMT Process
노윤섭
한국전자파학회 종합 학술 대회 (동계) 2021, pp.139-139 |
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Conference
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2021 |
GaN 기반 MIM 커패시터의 수율 및 균일도 분석
이상흥
한국전자파학회 종합 학술 대회 (동계) 2021, pp.153-153 |
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Journal
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2020 |
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
Sung-Jae Chang
Nanomaterials, v.10, no.11, pp.1-11 |
14 |
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Conference
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2020 |
C-band 30W SPDT Switch MMIC Development Using 0.2um GaN Process
노윤섭
대한전자공학회 학술 대회 (추계) 2020, pp.152-153 |
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Journal
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2020 |
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
Soo Cheol Kang
Nanomaterials, v.10, no.11, pp.1-9 |
5 |
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Conference
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2020 |
G03-1728 - Impact of Passivation System on Device Performance and Proton Radiation Hardness in GaN-Based MIS-HEMTs
Sung-Jae Chang
PRiME 2020, pp.1-3 |
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Conference
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2020 |
Impact of Passivation System on Device Performance and Proton Radiation Hardness in GaN-Based MIS-HEMTs
Sung-Jae Chang
PRiME 2020 (ECS Transactions 98), v.98, no.5, pp.519-526 |
3 |
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Conference
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2019 |
Design and Implementation of Multi-channel Radio Frequency Receiver with Heat Radiating for the Direction Finding
노윤섭
대한전자공학회 학술 대회 (추계) 2019, pp.260-262 |
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Journal
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2019 |
C-Band 20 W High Power Amplifier MMIC Design for Satellite Transmitters
노윤섭
한국전자파학회논문지, v.30, no.10, pp.808-813 |
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Conference
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2019 |
GaN High Power Amplifier Design for C-band Satellite Transmit System
노윤섭
한국전자파학회 학술 대회 (하계) 2019, pp.582-582 |
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Conference
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2019 |
Broadband GaAs LNA Design for C-band Massive MIMO
노윤섭
통신 정보 합동 학술 대회 (JCCI) 2019, pp.1-1 |
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Conference
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2019 |
15W GaN Power Amplifier MMIC for C-band Massive MIMO
노윤섭
한국전자파학회 학술 대회 (동계) 2019, pp.219-219 |
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Journal
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2019 |
A compact Doherty power amplifier for massive multi‐input multi‐output applications
YounSub Noh
Microwave and Optical Technology Letters, v.61, no.1, pp.28-30 |
2 |
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Conference
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2018 |
Development of X-band 120 W SSPA for Satellite SAR Payload
신동환
한국위성정보통신학회 학술 대회 2018, pp.87-87 |
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Conference
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2018 |
Design of Multi-channel Radio Frequency Receiver For Direction Finding
노윤섭
대한전자공학회 학술 대회 (추계) 2018, pp.277-279 |
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Conference
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2018 |
A Study on the GaN Based Miniature Power Amplifier
노윤섭
한국통신학회 종합 학술 발표회 (하계) 2018, pp.1-1 |
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Conference
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2018 |
A Study on the 15W GaN Power Amplifier MMIC for 5G Communications
노윤섭
한국통신학회 종합 학술 발표회 (동계) 2018, pp.795-796 |
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Conference
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2018 |
A Study on the 29W GaN Power Amplifier MMIC for 5G Communications
노윤섭
한국통신학회 종합 학술 발표회 (동계) 2018, pp.763-764 |
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Conference
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2017 |
위성 전파 탑재용 x대역 GaN 고출력 증폭기 MMIC 개발
노윤섭
한국항공우주학회 항공 우주 전자 심포지엄 2017, pp.1-1 |
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Conference
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2016 |
Development of Highly Efficient K-band 30W SSPA
장동필
한국전자파학회 전파 및 광파 기술 학술 대회 2016, pp.56-57 |
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Journal
|
2016 |
A Linear GaN High Power Amplifier MMIC for Ka-Band Satellite Communications
Youn Sub Noh
IEEE Microwave and Wireless Components Letters, v.26, no.8, pp.619-621 |
49 |
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Conference
|
2016 |
Development of Engineering Model of X-band 120W SSPA for Satellite Payload
장동필
한국통신학회 종합 학술 발표회 (하계) 2016, pp.135-136 |
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