ETRI-Knowledge Sharing Plaform

High Performance Solution-Processed Field-Effect Transistors(FETs) Gate Dielectric Metal Oxide Thin-Film Transistors Active Layer Organic Field-Effect Dielectric Films First Stokes(S1) Low Voltage Low-Cost Oxide Tfts Annealing Conditions Water Vapor Transmission Rate Hybrid Materials Indium-Free Low-Power Transfer Characteristics Cyclic Olefin Copolymer Thin Film Encapsulation Facile Route Large-Area Electronics On/Off Ratio P-Type Characteristics Turn-On Voltage Threshold Voltage(Vth) Deep Submicron On/Off Current Ratio Self-Aligned Channel Layer Practical Application Plastic Substrate Uv Exposure High Mobility Hole Mobility Solution-Processable Active Devices Flexible Electronics Insulating Properties Channel Length Dielectric Layer High Capacitance Inkjet Printing Manufacturing Processes Thermal Annealing Electrical Properties(I-V curve) Aligned Silver Nanowire Annealing Atmosphere Crack-Free Copolymer Layers Excellent Flexibility Contact Configuration Charge Transfer Colloidal Stability Doped Polymer Electrical Conductivity(EC) Encapsulation Process High Voltage Heterojunction Structure Injection Control Inorganic Thin Films Low Temperature Fabrication Low Surface Roughness N-Type Nano-Gap Oxygen Gas Polymeric Substrates Polyethylene Naphthalate Propylene Carbonate Repulsive Force Sn-Rich Tips-Pentacene Uv Light Uv Annealing Tio2 Nanoparticles Top-Emitting Organic Light-Emitting Device(TE-OLED) Visible Light Water Absorption 460 Nm Bottom Contact Channel Thickness Composite Electrode Crystalline Structure Double-Channel Earth-Abundant Materials Electron Injection Electrical Performance Functional Materials Grazing Incidence X-Ray Diffraction Hysteresis-Free Highly Conductive Inverted Staggered Low Operating Voltage Need For Next-Generation Optimum Thickness Printing Technique P-Type Tin Oxide Precursor Solution Resolution Limit Sol-Gel-Derived Straight Line Severe Bending Silver Nanowires(AgNWs) Three-Arm Toxic Chemicals Tft Array Zinc Tin Oxide Semiconductor Device Annealing Process Amphiphilic Polymer Cost-Effective Conductive Electrodes Crystalline Morphology Flexible Display Flexible Oleds Film Thickness Gate Leakage Current Highly Efficient High-K Zirconium Oxide High Responsivity In-Memory Lighting Applications Logic Devices Oxide Thin Films Oxide Material Room-Temperature Organic-Inorganic Nanohybrid Oxide Thickness Optimum Condition Poly(Ethylene Oxide)(PEO) Quantum-Dot Light-Emitting Diodes(QLEDs) Subthreshold Slope(SS) Surface Morphology Solvent-Assisted Subthreshold Swing(SS) Stretchable Displays Thin-Film Phototransistors(TFPT) And Gate Al-Doped Carrier Concentration Carbon Atoms Composite Film Different Thicknesses Hexagonal Lattice Hall Mobility Mechanical Flexibility Novel Material P-Type Organic Semiconductor P-Channel Titanium Oxide Tin(Ii) 2-Ethylhexanoate Trap Sites Thin Barrier Films Thermal Treatments Top Contact Voltage Transfer Well-Defined Memory Applications Bottom Gate Anneal Temperature Ambient Air Complementary Metal-Oxide-Semiconductor(CMOS) Cone-Jet Mode Deep Uv Dispersed Nanoparticles Dielectric Strength Device Characteristics Device Performance Free Volume Fabrication And Characterization Fabrication Method Functional Group Gate Bias High Temperature High Field-Effect Mobility Mechanical Properties(PMCs) Protective Layer Organic-Inorganic Hybrid Optical Properties Post-Anneal P-Type Oxide Semiconductor Persistent Photoconductivity Pen Substrates Power Integrated Circuits Plasma-Enhanced Atomic Layer Deposition Surface Modification Semiconductor Heterojunction Thin Film Thermoelectric Zn-Sn-O(ZTO) 2 H 2-Dichlorobenzene Printing Process Amorphous Indium-Gallium-Zinc Oxide(a-IGZO) Electronic Materials And Devices Double Layer Display Applications Environmental Stability External Bias Eco-Friendly Gas Barrier Films Field Emission Scanning Electron Microscopy(FESEM) Hole Transport Layer Hydrophobic Polymer High Dielectric Constant Hybrid Thin Film Image Sensor Low Leakage Current Density Mass Production Organic Complementary Inverters Organic Electronic Optical Transmittance Oxide Layer Polymer Substrate Photo-Stability Potential Applications Reduced Graphene Oxide(rGO) Smooth Surface Synthetic Strategy Two-Dimensional(2D) Tri-Layer Uv-Assisted Tin (Iv) Oxide Oxide Semiconducting Materials Oxide Electronics Thermoelectric Materials Bending Cycles Back-Channel Etching Corrosion Tests Close-Packed Carrier Mobility Densely Packed Electrical Characteristics Electric Power Generation Form Factor Graphene Films Flexible Electronic Devices Go Sheets Highly Stable Inorganic Material High Glass Transition Temperature Highly Crystalline High Photoresponsivity Low Annealing Temperature Large-Area Graphene Mechanism Of Formation Organic Thin-Film Transistors (Otfts) Optimized Condition Oxide Transistors Optoelectronic Devices Patterning Process Photo-Generated Holes Power Electronics Power Electronic Devices Reactive Gas Production Operations Specific Detectivity Transparent Electronics Tin Oxide Films Crack Propagation Co-Solvent System Dielectric Materials Driving Characteristics Flexible Substrate Electrohydrodynamic Jet Printing Film Formation Gas Molecules Gas Barrier Properties Homogeneous Solution Key Element K-Doped Industrial Technology Lift-Off Low Surface Energy Molecular Orientation Metal-Oxide-Metal Measuring Equipment Polar Group Printing Method Plasma-Enhanced Chemical Vapor Deposition (Pecvd) Pulsed Laser Ablation(PLA) Relative Humidity Stability And Durability Sol-Gel Reaction Semiconducting Layer Two-Step Heat Treatment Thermal Effects Various Substrates