ETRI-Knowledge Sharing Plaform

Core/Shell Nanowires Ge/Si Core/Shell Schottky Junction Spot Size High Responsivity Integrated Circuit Fabrication Process Reduced Pressure Chemical Vapor Deposition P-I-N Photodetectors Schottky Diode Slab Waveguide Silicon Wafer 3-Db Bandwidth Low Dark Current Thin Film Resistor Strain Gradient High Speed Ge Photodetectors Annealing Temperature Directional Coupler(DC) Creative Technology Single Nanowire Leaky Mode 2d Material Contact Size Cross-Sectional Imaging Deposition Technique Doped Si Anti-Stiction Coating Annealing Conditions Annealing Time Beam Profile Hole Carriers Oxidation Of Silicon N-Type Transistors Photoelectric Characteristics Photonic Devices Pattern Analysis Process Conditions Electrical Properties(I-V curve) Effective Power Focal Length Reconfigurable Fet Key Parameters Base Structure Vls Process Transmission Electron Microscopy(TEM) Time Effect Si Nanowires Selective Epitaxial Growth(SEG) Carrier Confinement Crystal Plane Junction Formation Broadband Photodetector High-Quality Internal Photoemission Noise Performance Numerical Aperture Non-Volatile Memory(NVM) Novel Technique P-Type Silicon Epitaxial Lateral Overgrowth Low Power Leakage 6 Ghz Minimum Gap Wake-Up W Metal Waveguide Grating Coupler Separation Process Ultra-High Performance 2d Semiconductors Soi Process Coupled Beam Absorption Edge Thermal Variation Tensile Strain Highly Efficient Power Semiconductor Even Longer Wavelength Eye Diagram Emitter Layer Electron Microscopy Analysis Room-Temperature Rectifying Behavior Remnant Polarization 5 Nm Laser Light Top Electrode Metal Deposition Scanning Electron Microscopy(S.E.M.) Silicate Glasses Technology Forecasting Field-Effect Transistors(FETs) Carrier Density Chemical Mechanical Polishing(CMP) Crystalline State Cut-Off Frequency Hydrogen Silsesquioxane Infrared Detector Intelligent Greenhouse Process Parameters Electronic Structures Forward And Reverse Glass Materials Resistance Change Memory Applications Model-Based X-Ray Diffraction Analysis Ultra-Thin Body(UTB) Silicon-Based Ultra-High Vacuum Chemical Vapor Deposition Type-Ii Heterojunction Surface Potential Surface Roughness Analysis Sulfurization Method Base Layer Building Block High Throughput(HTP) Ic Reliability Operating Speed Prism Coupling Method Parameter Values Energy Band Structure Gaussian Functions Rf Performance Light Sources Limiting Factors Mid-Infrared(MIR) Si Layer Techno-Economic Study Transition-Metal Dichalcogenides(TMDCs) Transit Time Sound Performance Semiconductor Heterojunction Silicon Epitaxial Layer System-On-Chip(SoC) Superior Performance Charge Transport Compact Model Device Size Density Change Amorphous Sio 2 Applied Bias Blue Laser Beam Propagation Method Heterojunction Bipolar Transistors(HBTs) Hybrid Electronics Heterojunction Barrier Initial State N-Type Si Performance Tradeoffs Reverse Bias Polarization Switching Electron Beam Lithography Maximum Oscillation Frequency Single Wafer Schottky Photodiode Silicon Electronics Diffraction Pattern Density Functional Theory(DFT) Bulk Silicon Highly Crystalline Heavily Doped Intensity Profile Output Coupling Optimal Conditions Optimized Process Potential Barrier Electrical Characteristics Full Width Resistance Variation Low Phase Noise Transport Model Active Devices Build-Up Time Sige Hbt Window Size Wide Range Silicon-Germanium(SiGe) Silicon Device Current-Voltage Characteristics Diffraction Limit Data Transmission And Logic Gates 2.3 Ghz 3.5 Ghz High-Resolution X-Ray Diffraction Hexagonal Boron Nitride(h-BN) High Resistance Optical Devices On-Chip Measurement 1550 Nm Pulse Width Power Demand Ge-On-Si Group Iv Low Noise Low-Cost Local Area Lithography Process Minimum Noise Figure Waveguide Photodetector Van Der Waals (Vdw) Heterostructures Localized Oxidation Silicon-On-Insulator (Soi) Technology