ETRI-Knowledge Sharing Plaform

Gate Insulator Oxide Tfts Active Layer Subthreshold Swing(SS) High Performance Spatial Light Modulator(SLM) Glass Substrate Transparent Thin Film Transistor(TTFT) Turn-On Voltage Drain Current Active Channel Zno Thin Films Solution-Processed Vinylidene Fluoride-Co-Hexafluoropropylene(Poly) Amorphous Indium-Gallium-Zinc Oxide(a-IGZO) First Stokes(S1) Gate Bias Stress Vdf-Trfe Digital Holography Gate Dielectric Phase Change Material(PCM) Electrical Characteristics Post-Annealing Highly Stable Next-Generation Subthreshold Slope(SS) Fabrication Process Device Characteristics Gate Voltage Applied Physics Holographic Display Bias Stability 3 V Ferroelectric Gate Device Stability Al-Zn Tft Array Electrochromic Device(ECD) Amorphous Silicon Thin-Film Transistors(a-Si TFTs) Emitter Arrays Channel Layer High Field-Effect Mobility Charge Trapping Indium Tin Oxide(ITO) And Gate Field Emitter Array Double Layered Passivation Layer Process Temperature Device Structure AM-OLED Flexible Substrate Igzo Thin Film Low-Cost 20 Nm Short Channel Memory Window Atomic Ratio Oxygen Vacancies Ito Film Stability Characteristics Electrical Stability Oled Display 5 Nm Back-Channel Etch Dry Etching Tail States Transparent Electrode Transparent Display Aperture Ratio Plasma-Enhanced Atomic Layer Deposition Display Panel Device Performance Information Display Comparative Study Display Applications Digital Hologram 3d Image On/Off Current Ratio Metal Oxide Thin-Film Transistors Dual-Mode Monolithically Integrated Visible Range Transfer Characteristics STRETCHABLE ELECTRONICS Saturation Mobility Wet Etching Process Large-Area Electronics Zinc Indium Oxide Field Emission Display Organic Light-Emitting Device(OLED) Flexible Display Oxide Material Top Emission Organic Layers Zno Layer Channel Structure Stress Test Vertical Channel Gate Leakage Current Trap Density Pixel Structure Electrical Bias Negative Shift Contrast Ratio Semiconducting Channel Constant Current Stress Annealing Conditions Interfacial Trap Gate Electrode Mobility Fluctuation Protection Layer Degradation Mechanism Etch Selectivity High Voltage Current Efficiency Source And Drain Bottom Contact Electronic Transport Properties Organic Ferroelectric Ultra-High Resolution Need For Highly Conductive Liquid Metal Driver Circuit Laser Lift-Off Positive Bias Current On-Off Ratio High-Resolution Displays Transparent Electronics 1 H Control Device Gas Mixture High Density Plasma Memory Array Cu-Doped Zno Simulation Results Data Line Pulsed Laser Ablation(PLA) Good Stability White Organic Light-Emitting Diodes Transparent Cathode Working Electrode Vth Shift Phase Modulation Graphene Electrode Spatial Light Modulation Counter Electrode Active Matrix Display Three Dimensional(3D) Surface Morphology External Quantum Efficiency Optical And Electrical Properties Low Power Consumption Electronic Structures Cie Coordinates Carrier Density Surface Roughness As 2 Fabrication And Characterization Nonvolatile Memory Transistors High Temperature Electronic Properties Voltage-Dependent Color-Selective Threshold Voltage Shift Double-Channel Amorphous Igzo Electrochromic Materials Quantum Dot(QD) Combinatorial Method Reactive Sputtering Polyethylene Naphthalate Wet Chemical Transistor Array Hydrogen Doping Stability Enhancement Graphene Anode Ti-Doped Ito Excellent Performance Temperature Stability Hybrid-Type Photolithography Process O 3 Microelectronic Devices Large Size Transmission Electron Microscopy(TEM) Indium-Free High Accuracy Parasitic Capacitance Novel Method Etching Method Bias Dependence Non-Uniform Sampling Double Buffer Oxide Electrode Noise Power Liquid Crystal Device Transfer Process Triple-Layer Zno Nanorod A-Si:H Tft Inverted Staggered Nonvolatile Memory Devices Red Emitting Thermal Process Operation Speed Plasma Power Full-Color Layer Structure Light Shield Channel Thickness Analytical Modeling Coloration Efficiency Lighting Applications Conductive Oxide Highly Efficient Ultrathin Layer Oxygen Partial Pressure Contact Structure Trade-Off Channel Material Abnormal Behavior Active Area Cavity Structure Electronic Skins Ferroelectric Polymer Etch Stop Layer Oxide Channel Annealing Process Crystalline Phase Sn-Doped Zno Electrode Wave Propagation(WP) Work Function Organic Passivation Real-Time Carrier Concentration Electron Trapping Post-Heat Treatment Stretchable Substrate Model-Based Different Thicknesses Bottom Gate Structure Si Wafer Ferroelectric Polarization Sub-Micron Gate Line A-Igzo Tfts Photo Response Doped Zno Films Trap Sites Stable Operation Barrier Layers High Efficiency Plasmonic Structures Organic-Inorganic Hybrid Gate Stack Interface Trap Key Factor Fast Response Time 4-Ethylenedioxythiophene):Poly(4-Styrenesulfonate)(PEDOT:PSS) Matrix Field Voltage Sweep Device Applications Oxygen Vacancy Defects Semiconductor Films Shield Layer Possible Mechanism Normalized Noise Thin Film Deposition Bias Instability Protective Layer Seed Layer Process Optimization Plastic Substrate Integration Density Optical Components Poly (Ethylene Glycol)(PEG) Power Efficiency Environmentally Friendly Sb-Doped Frequency Range Passivation Film Ingazno Tfts Bias Temperature Stress Hole Mobility Rf Sputtering Hybrid Thin Film Smooth Surface Surrounding Environment Liquid Crystal Display(LCD) Physical Model Triplet State Electronics Properties Spin-Coated Solution-Processable Device Integration Electron Beam Optical Performance Thermal Activation Energy Bonding Technology Amorphous Oxide Semiconductor Capacitance-Voltage High Reflectance Photo-Stability Layered Oxide Hydrogen Incorporation Intermediate Electrodes Display Technology Polymer-Dispersed Liquid Crystal(PDLC) Mo-Doped Zno(ZnO:Mo) Superlattice Thin Films Low Frequency Noise Memory Cell Device Reliability Electrical Stress Channel Width Instability Modes Diffraction Pattern Low Voltage Optoelectronic Devices Stress Conditions Wide Range Metal Interconnects Metal Electrode Ambient Light Aluminum-Doped Cu Ions Heat-Treated Angular Spectrum Memristor Device High Carrier Mobility Indium Zinc Tin Oxide(IZTO) Thermal Annealing Low Driving Voltage Resonant Cavity Si Etching White Oleds Electric Characteristics Ultrathin Film Combinatorial Approach Film Composition Logic Circuit Thin Structure Reflective Mode Neuromorphic Hardware Ag Film Structural And Optical Properties Final Heat Treatment Tris(8-Hydroxyquinoline) Aluminum(III) Amorphous Zno Flexible Backplane Highly Transparent Doping Concentration Degradation Behavior Surface Treatments Zn-In-Sn-O On-State Current Performance And Reliability Transparent Tft Overall Performance Light Transmission Dominant Mechanism Ultraviolet Laser Graphene Devices Color Rendering Index Applied Bias Voltage Low Resistance Electrode Super-Resolution Imaging Driven Device Laser Lithography Pre-Reduction Silicon Film Reliable Transfer Areal Capacitance Ferroelectric Field Effect Relative Intensity Gate Driver Disturb-Free Laser Energy Persistent Photoconductivity (Ppc) High Concentration Metal-Oxide-Metal Enhancement-Mode Subwavelength Resolution Good Crystallinity Crystallization Behavior Elastic Film Pressure Distribution Metallic Zinc Still Image Diffusion Depth Color Stability Emitting Materials Level Production On-Current Diffusion Barrier(DB) Hysteresis Behavior Optimization Methods Laser Irradiation Dielectric Materials Sn-Zn Performance Optimization 51 V Coercive Field Performance Parameters Standard Deviation(STD) Cathode And Anode Carbon Nanotubes Patterning Screen Printing Doped Sno 2 Film Formation Emission Structure Transparent Conducting Electrode(TCE) Triplet Exciton Density Of States Mechanism Of Formation Selective Doping Titanium Electrodes Switching Device Vacuum Deposition Connection Systems Red Phosphorescent Organic Thin-Film Transistors (Otfts) Design Method Case Studies Compensation Effect Lift-Off Process Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer Electrode Materials Room Temperature Fabrication Chemical Strengthening High Uniformity Random Orientation Flexible Circuits Voltage Pulse K-Doped Overdrive Voltage Heavy Metals Pcm Layer Chromaticity Coordinates Experiment Results White Led Working Pressure Absorption Characteristic Synergetic Effect Ti Film 5 Mol%(MgO) Fine Pitch Effective Channel Length Process-Based Neutral Donor Printing Method High-Capacity Ti Doping Driving Circuit Organic Binder Wavelength Range Surface Energy Photo Mask 20th Century Drain Bias Stress Feature Size Hole Transporting Layer Minimum Power Dual Gate(DG) Co-Solvent System Gen 2 Visible Transmittance Aliasing Error Optical Modulation Pulse Duration Printed Carbon Nanotubes Tin Oxide Films High Diffraction Efficiency Graphene Films Temperature Dependence 77.80.-E Low Annealing Temperature Ion Beam Deposition Plasma Effects Image Hologram Two-Dimensional Image Reconstructed Image Power Spectra Density Scattering Particles Sinx Passivation Charge Injection Inorganic Semiconductors Co-Sputtering Method Channel Noise Growth Rate Electric Power Generation Proof Of Concept Sky Blue Soft Electronics Two-Step Annealing Sputtering Target At Interfaces Transparent Memristor Rigid Materials Small Size Energy Storage Channel Potential Dependence Of Threshold Voltage Photo-Generated Holes Spectroscopic Analysis Metal Mesh Negative Bias Stress Excellent Stability Coupling Conditions Experimental Study Technical Feasibility Hydrogen Atoms Electron Injection Layer Thermoelectric Materials Mechanical Strain Electrolyte Solution Deep Level Display Driver Harsh Conditions Wide Viewing Angle Temperature Condition Flexible Electronics Blue Dopant Zno Nanocrystalline Films Sheet Resistivity Glass Encapsulation Organic Electronic Devices Contact Noise Pixel Density Structure Design Fast Switching Voltage Curve Oxide Layer Computer Generated Holograms(CGH) Time Dependence Single-Input Photo-Polymerization Glass Surface Plasma Damage A-Ingazno Correlated Color Temperature Potential Applications Atomic Force Microscope(AFM) Subwavelength Metallic Gratings Photo-Responsive Light Diffraction Red Phosphorescence Interface Engineering Spectral Absorption Mechanical Durability Hyper-Realistic Etching Damage Pulsed Current Transparent Substrate Driving Electrode Dark States Improved Thermal Stability Visible Region Trapping Behavior Coupling Enhancement Diffusion Of Ions Out-Coupling White Emitting Heat Generation Memory Effect Hall Measurement 1.5 Um Selective Energy Transfer Si-Based Large-Area Graphene Red Dopant Igzo Target Transistor-Type Light Propagation Structural Parameters Smart Approach High Electron Mobility Transistor(HEMT) Lcd Panel Hologram Reconstruction Electricity Consumption Film Forming Numerical Error Ambient Conditions High Refractive Index Large Numbers Light Penetration Light Stability Single Buffer Layer Oled Degradation Layered Films Gst Thin Films Fermi Level Gate Oxide Reflected Light Visible Light Illumination Spin-Coating Method Normal Process Positive Charge Fowler-Nordheim Plots Pulse Amplitude X-Ray Photoelectron Spectroscopic Initial Stage Sol-Gel Route Soft Platforms Stack Structure Blue Fluorescence Tin (Iv) Oxide Surface Characteristics Diffractive Optical Elements Low Sensitivity Barrier Properties Polarization Switching Maximum Diameter Light Emission Xrd Patterns Frequency Variation Light-Emitting Electrochemical Cells(LECs) Technical Issues Absorption Properties Silicon Oxide E-Beam Evaporation(EBE) Integrated System Poly-Si Film Deposition Rate Host Material Oxide Electronics Pecvd Sinx Phonon Frequencies Stacked Structure Patterned Graphene Aluminum Oxide White Emission Charged Species Operation Characteristics Sub-Pixel External Bias Si Nanoparticles Fermi Energy Level Single Step Required Duration Key Technology Power Integrated Circuits Positive And Negative Switching Operation Dc Magnetron Sputtering Method Driving Method Light Control Organic And Inorganic Materials 1-Methoxy-2-Propanol Polymer Materials Transparent Anode Real-World White Light-Emitting Ionized Donors Exponential Distribution Power Law End Functionality Energetic Oxygen Low Transmittance Defect Passivation Transparent Conductor Complementary Metal-Oxide-Semiconductor(CMOS) Retention Time Process Scheme Diagonal Length Aligned Nanorods Storage System Hard Metal Gate Pulse Scaling Down Shift Register Scattering Parameters(S-parameters) P-Type Oxide Semiconductor Fluorescent Dye Metal Surface Growth And Transfer Phosphorescent Materials Multi-Layered Graphene Building Space Igzo Semiconductor In-Zn-Sn-O Tert-Butyl Emissive Layer(EL) Laser Interference Wearable Device Tin-Zinc Human-Machine Interaction(HMI) Cost-Effective Fabrication Poly-Si Thin Film Negative Bias Illumination Stress(NBIS) Reflection Characteristics Laser Writing Numerical Study Energy Dispersive X-Ray Spectroscopy(EDX) Organic Photovoltaics(OPVs) Binary Pattern Stress-Induced Ultrasonic Methods Continuous Domain Edge Shape Oxygen Vacancy Concentration Blue Oleds Processing Temperature Reversible Deposition Cu Electrodes High Electrical Conductivity Zinc Oxide Thin Films Low Contact Resistance Liquid Electrolyte Output Characteristics Metal-Doped Encapsulation Layer Display System Multi-Band Pl Intensity Ion Diffusion Zno-Sno 2 And Reflection Amplitude-Only Iridium Complexes Thin Film Thermoelectric Trapped Electron(TE) Dual-Functional Superior Performance Direct-Current Magnetron Sputtering Well-Aligned Indium Zinc Oxide Dye Molecules Aging Process Light Shutter Dispersion Factor Long-Run Flat-Band Voltage Etching Behavior Process Development Sequential Lateral Solidification Size Scale Image Data Crystallization Temperature Interfacial Layer Low Electric Field Ab Initio Molecular Dynamic Simulations Circuit Architecture Sampling Interval Cathode Electrode Off-State Current Tin-Doped Indium Oxide Ag-Doped Control Layer Electrophosphorescent Devices 2-Dichlorobenzene Blue-Emitting Fully Depleted(FD) Short-Pulsed Transparent Organic Light-Emitting Diodes Memory Applications Force Microscopy Whole Process Operating Voltage Guest-Host Voltage Scan Chromium Film Successful Implementation Bulk Growth Key Components Nanocomposite Structure Electrolyte Concentration Source/Drain Electrodes Flexible And Transparent Doping Agents Single-Layer Polarization Effect 4-Point Probe Switchable Mirror Active Region Band-Gap Energy Graphene Layer Atomic Layer Deposition Method Halogen Lamp Oxidation State Black Dye Cu Concentration Stable Output Metal Layer Thermal Oxide High Transmittance Wearable Electronics Self-Assembling Methyl- Plasma Assisted Atomic Layer Deposition(PA-ALD) Plasma Process Triplet Harvesting Radiant Heat T-Type Cubic Phase Quantitative Measurement Hybrid Structure Threshold Electric Field Ald Method Turn-On Field Rapid Development Enhanced Performance State Maintenance Optical Contrast Bi-Layer Non-Paraxial Very High Resolution Chemical Bonding State Ionized Physical Vapor Deposition(IPVD) Treatment Method Green Light Anneal Temperature Energy Consumption Volume Ratio Amorphous Ingazno Thin Film Critical Coupling Modulation Scheme Rotation Angle Thermal-Induced Low-Temperature Process Short Time Oxidizing Atmosphere Pixel Integration Hydrogenated Amorphous Silicon Oxidized State Double-Gate(DG) P-Type Characteristics Short-Range Ordering Defect Density Alloy Thin Film Switching Characteristics Layer Effect Highly Stretchable Novel Material Field Enhancement Factor Two Layers Memory Structure N-Type Doping Conduction Mechanism 4-Vinyl Phenol(Poly) Transparent Conductive Oxide Deposition Optoelectrical Properties Anneal Treatment Energy Levels Wavelength-Selective Dielectric Thickness Operating Characteristics Three-Layered Integrated Electronics Polymerization Method Donor Defects Electrochromic Performance Active Materials Broadband Applications Raman Spectroscopy Organic Transistor Tin(Ii) 2-Ethylhexanoate Solution-Based Synthesis Hydrogen Diffusion Self-Aligned Hall Mobility Novel Indium Precursor Cross Talk Rf Power Fabry-Perot Resonance Defect Sites Wide Temperature Range Light Response Low Resistivity Radio Frequency (Rf) Magnetron Sputtering Wet Treatment Positively Charged Electro-Optical Properties(E-O) Continuous Current Active Structure Sputter Deposition And Logic Amorphous Phase Conventional Devices Dye-Doped Charging And Discharging Electrical Contact Toluene Solvent Numerical Simulations Film Structure Bias Temperature Instabilities 3d Object Oxide Thickness Diffraction Grating Polyimide Substrate Electronic Product Single-Sided Lamination Process Si Film Thickness Stretchable Electrode Charge Storage Power Ratio Erasing And Rewriting Active Protection Current-Voltage (I-V) Characteristics Pentacene Thin-Film Transistors Injection Barrier Coupled With Flexible Oleds Layer Composition Photo Resist Voltage Drop Life Time Elastomeric Substrate Orders Of Magnitude Top Electrode New Approach Polarizer-Free Solvent-Assisted Power-On Phosphorescent Dyes Programming Pulse Pzt Films Oxide Gate High Stability Anode And Cathode Surface Plasmon(SP) Semiconductor Memory Fluorescence Emission Low Mobility Voltage Stress Spatial And Temporal Organic Devices Etch Damage Hot Plate Density Of Trap States Electrochromic Supercapacitor Field Emission Properties Stacked Oled Reflection-Type High Mobility Transistor Information And Communication Cyclic Operation Ga Content Sno2 Nanoparticles Deposition Process Reflection Mode Parasitic Resistance High-Speed Operation Device Design Electrochromic Behavior Precursor Solution Dynamic Bias Ac Bias Absorption Features Atomic Diffusion Chemical Treatment Metal Source/Drain(S/D) Emission Characteristics Semiconductor Thin-Film Transistor Passive Type Emotional Experience Flexible Oxide Thin-Film Transistors Inductively-Coupled Plasma(ICP) Sampling And Interpolation Nonvolatile Ferroelectric Memory Surface Composition Polymerization Reaction Stability And Performance Ferroelectric Nature Spherically Symmetric Helicon Plasma Excimer Laser Annealing Charge Movement Smart Windows Sampling Number Remote Phonon Scattering Ti Thin Film Large Viewing Angle Perfect Absorption And Operation Compositional Ratios Stretchable Displays Vertical Stacking Facile Route Galvanostatic Charge/Discharge Cooling And Heating Plasma Oxidation Amplitude And Phase Information Cell Gap Field Propagation Negative Electrodes Uniformly Distributed Al-Sn Trapping Effects Low Oxygen Co. Kgaa Transistor Characteristics Low Processing Cost Ring Oscillator Zn Oxide Light Waves Narrow Channel X-Ray Photoelectron Spectroscopy Semi-Transparent Red Light Absorption Profile Off-Axis Blue Devices Optimum Thickness Blue Emission Earth-Abundant Materials Xrd Measurements High Definition High Potential Zno Semiconductor Color Gamut Oscillating Frequency High Power Ag Deposition Effect Of Deposition Optical Transparency Zinc-Doped Fourier Space Spatial Frequency Image Generation Polycrystalline Silicon Thin-Film Transistor Flexible Thin Film Transistors Carbon Dioxide Flat Panel P-Type Tin Oxide Plasma-Enhanced Chemical Vapor Deposition(PECVD) Scale Up Interface Formation Deformable Interconnects Vacuum Packaging Heat Treatment Process Pulsed-Laser Deposition(PLD) Improved Stability High Electrical Performance Reflection Structure Plasma Sputtering Negative Voltage Coplanar Structure High-Quality Electrical Characterization Electronic Holography Cell Structure Oxygen Plasma Treatment Lossy Dielectric Layer Adhesion Properties Square Wave Direct Deposition Oxygen Gas Pedot:Pss Layer Annealing Time Wide Band Gap Semiconductor Diodes Sonochemical Method Propylene Carbonate Space Cooling Nanocomposite Thin Films Under-Sampling Sputtering Process Subthreshold Current Steep Slope Improved Efficiency Charging Current Crack-Free Propylene Glycol Electron Transporting Layer Sensor Sensitivity Low Leakage Current Amorphous-Like Doping Density Flexible Nonvolatile Memory Films Properties Switching Speed Spin Casting Self-Limiting Flexible Device High-Purity Technical Barrier Surface Contamination Power Spectral Density(PSD) Transparent Oxide Semiconductor Effect Of Oxygen Compact Size Measurement System Sn-Rich Subgap States High-Speed Interface Current Noise Surface Layer Insulator Layer In-Zn-O Free Space Active Metasurface 1/F Noise Bottom Electrode Modulation Characteristic Electrically Controlled Birefringence Patterning Method Operating Current Density Instability Mechanism Top-Gate Structure Off-State Stress Atomic Composition Temperature Annealing Sputtering Pressure Nondestructive Readout Operation Device Configuration Ag Thin Film Critical Damage Holography System Device Failure Focused Analysis Water Vapor Electrochromic Switching Contact Configuration Formation Process Tio2 Nanoparticles Working Gas Low Drain Voltage Lightly Doped Drain(LDD) Electronic Systems And Physical Properties Graphene-Metal Electrochemical Property Near-Field More Or Less Level Shifter Breakdown Field Phase-Only Voltage Inverter Reduced Mobility Ohmic Contact Resistance Luminous Efficiency Doped Oxide Chemical Vapor Deposited Cathode Ray Tube As Doping Wrinkled Surface Charge Barrier High Density Integration Annealing Atmosphere Conductive Paths Electrochemical Reaction(ECR) Sensing Film Device Degradation Naked Eye Static Current Z Axis Programming Characteristics