ETRI-Knowledge Sharing Plaform

Microwave Monolithic Integrated Circuits(MMIC) Microwave Integrated Circuits(MICs) Pseudomorphic High Electron Mobility Transistor(pHEMT) T-Gate Cutoff Frequency Compound Semiconductor Components Technology 5 Ghz High Power Amplifier Microwave Characteristics Low Temperature Cofired Ceramics(LTCC) Power Amplifier Mmic Algaas/Ingaas/Gaas Phemts Mmic Power Amplifier Gan Hemt Technology Transmission Line Recessed Gate Gan Hpa Maximum Oscillation Frequency Gaas Mmic Gallium Nitride (Gan) Maximum Frequency Comparative Study Rf Performance Device Characteristics Gate Length 2.4 Ghz Small Signal Gain Wireless Personal Area Network(WPAN) 6 Ghz Ku-Band Plasma-Enhanced Chemical Vapor Deposition (Pecvd) 7 Mm Wireless Communication Systems Coplanar Waveguide Feeding(CPW) K-Band Unconditional Stability Device Performance Passivation Layer 28 Ghz Design And Fabrication Output Power Density Wireless Transceiver Module Input/Output Matching Ribbon Wire Gate Shape High Performance Silicon Nitride Algan/Gan Hemts Sin X Wire-Bonding Technique Parasitic Capacitance Packaging Material Rf Characteristics High-Efficiency Power Amplifiers(PAs) Maximum Output Power Scattering Parameters(S-parameters) Yield Enhancement Millimetre-Wave 60 Ghz Wireless Communication Ceramic Technology Low Noise Amplifier (Lna) Pre-Passivation Coupled Microstrip Line Input Reflection Coefficient Stage Structure Plasma-Induced Damage Head Size 5g Base Station Current Status Fabrication Technology Fifth-Generation(5G) Intelligent Vehicle Wide Band Gap High Linearity Wet And Dry Etching 5g Communication Ghz Band Low Dielectric Constant Surface Layer Network Applications Pinch-Off Sheet Thickness 70 Ghz Bias Circuit Design Techniques Matching Circuit Service Market Nitride Layer S 11 60ghz Communication 5g Mobile Communication Output Power Control 5.8 Ghz Gan-Based Gaas Process Passive Components Experimental Study Gain Flatness Microstrip Coupled Line Surface Treatments Integrated Circuit Technology Lithography Process Ka Band Satellite Rf Detector Wlan Applications Input Return Loss Single Power Supply Gan On Silicon Techno-Economic Analysis Gaas Mhemt Frequency Efficiency Technology Trends Ground Plane(GP) Open Technology Down-Conversion Frequency Bandwidth Rf Signal Signal Leakage Sensor Node And Gate Matching Network Single-Ended Band Power Leakage Current Top Layer Drain Saturation Current Rf Isolation Satellite Payload Thin Film Resistor Infrastructure Support Microwave Frequencies Open Stub 5 Nm Communication Services Operation Conditions Drain Current Gate Recess Saturated Output Power Wideband Operation F MAX Operating Frequency Range Power Added Efficiency(PAE) Radio Frequency (Rf) Wilkinson Power Divider(WPD) Enhancement Mode(E-mode) Gan Power Device Back-Off Ohmic Contact Resistance Measurement Shunt Capacitors E-Beam Lithography Research Institute S 22 Biasing Circuit Communication Infrastructure High Isolation Ubiquitous Computing Environment On-Chip Optical Communications Insertion Loss Third-Order Intercept Point Drain Voltage Silicon Carbide(3C-SiC) Directional Coupler(DC) Two-Step Co-Firing Etching Method High Resistance Key Device X-Band Applications National Defense Stable Structure High Carrier Concentration Next-Generation Unit Cell Cross-Sectional Area(CSA) Cpw Line Output Impedance Solid State Power Amplifier Low Loss Tangent Gan Power Amplifier Nicr Thin Film Auger Electron Spectroscopy Applied Physics Technology Infrastructure Platform Development Signal Line Wireless Local Area Network(WLAN) Design And Implementation Side-Wall Anisotropic Etching Gate Annealing Plasma Ashing Conversion Gain Fabrication Process Process Technology T-Shaped Gate Buffer Amplifier Saturation Characteristics X-Ray Photoelectron Spectroscopy Stability Parameter Gan On Sic On-Wafer Cascode Mixer C-Band Green Sheet Sheet Resistance Three-Stage Amplifier Ltcc Substrate Ultra-Low Power(ULP) Branch-Line Coupler Measurement Results Frame Transfer(FT) Reactive Ion Etching Single Supply Ramp-Up Adaptive Biasing Gate Width Millimeter-Wave Band Stability Improvement Asynchronous Processor Annealing Process Base Station Applications High-Rate Reference Surface Gate Bias Fabrication Method Metal-Insulator-Metal (Mim) Capacitor Wet Etching