ETRI-Knowledge Sharing Plaform

Power Amplifiers(PAs) Microwave Monolithic Integrated Circuits(MMIC) Microwave Integrated Circuit Components Technology Compound Semiconductor T-Gate Pseudomorphic High Electron Mobility Transistor(pHEMT) High Power Amplifier(HPA) Mmic Power Amplifier Recessed Gate Algaas/Ingaas/Gaas Phemts Gaas Mmic Low Temperature Cofired Ceramic(LTCC) Cut-Off Frequency Comparative Study Power Amplifier Mmic Frequency Range Coupled Microstrip Line Gan Hpa Parasitic Capacitance Solid State Power Amplifier Gate Shape High Performance K-Band Plasma-Induced Damage Passivation Layer Ceramic Technology Pre-Passivation Gan Hemt Technology Input And Output Ku-Band Algan/Gan Hemts Device Characteristics Device Performance Power Device Rf Performance Wireless Personal Area Network(WPAN) Silicon Nitride 5g Base Station 5 Ghz Microwave Characteristics Etching Method Ka Band Satellite Matching Network On-Chip Power Added Efficiency(PAE) Rf Isolation Resistance Measurement Surface Layer Satellite Payload Three-Stage Amplifier Third-Order Intercept Point Wilkinson Power Divider Asynchronous Processor Base Station Applications Bias Circuit Branch-Line Coupler Ghz Band High Rate X-Ray Photoelectron Spectroscopy 6 Ghz Directional Coupler(DC) Output Impedance Techno-Economic Analysis Next-Generation Rf Characteristics Silicon Carbide(3C-SiC) Small Signal Gain Stage Structure Two-Step Unconditional Stability Cross-Sectional Area(CSA) Applied Physics Buffer Amplifier Drain Current Microstrip Coupled Line Network Applications Open Stub National Defense Plasma Ashing Shunt Capacitors Technology Infrastructure T-Shaped Gate Wet And Dry Etching Auger Electron Spectroscopy And Gate Biasing Circuit Fabrication Technology Gallium Nitride (Gan) Gan Power Amplifier Infrastructure Support Platform Development Sensor Node Ultralow Power(ULP) Gaas Process Stable Structure Cascode Mixer Design And Implementation E-Beam Lithography Gan On Silicon Yield Enhancement 5.8 Ghz Wet Etching Operation Condition Open Technology Sin X Scattering Parameters(S-parameters) Head Size Reference Surface Side-Wall Wlan Applications Conversion Gain Adaptive Biasing Back-Off Down-Conversion Gan-Based Gate Length High Linearity Wideband Operation Maximum Oscillation Frequency Microwave Frequencies Output Power Control Optical Communications Process Technology Passive Components Sheet Resistance Rf Choke Ubiquitous Computing Environment Communication System C-Band Experimental Study Gate Recess High Isolation Gan Hmet High Efficiency Power Amplifier Low Noise Amplifier (Lna) Maximum Frequency Nitride Layer Reactive Ion Etching(RIE) Saturated Output Power Single Supply 60ghz Communication On-Wafer Rf Detector Anisotropic Etching Drain Voltage Fifth Generation(5G) Frequency Band Intelligent Vehicle Lithography Process 2.4 Ghz 28 Ghz Enhancement-Mode Surface Treatments Stability Improvement Stability Parameter Metal-Insulator-Metal (Mim) Capacitor Plasma-Enhanced Chemical Vapor Deposition (Pecvd) Return Loss(RL)